Abstract: An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.

Abstract: An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.

Abstract: The invention relates to a method of treating a thin film transferred from a donor substrate to a receiver substrate by fracture at the level of a zone of the donor substrate which is made fragile by hydrogen ion implantation. The method includes a step of thinning the transferred thin film so as to eliminate a region of residual defects induced by the hydrogen ion implantation. The method also includes, directly after the fracture and before the step of thinning of the transferred thin film, a step of forming a hydrogen trapping layer in the region of residual defects of the transferred thin film. A thermal processing may be implemented after formation of the hydrogen trapping layer and before thinning of the thin film.

Abstract: Process for manufacturing a multi-junction structure for a photovoltaic cell. The process includes steps in: a) providing a first donor substrate including a first carrier substrate and a first seed layer including a first material; b) providing a second donor substrate including a second carrier substrate and a second layer including a second material different from the first material; c) bringing the first seed layer and the second layer into contact so as to obtain a direct bond between the first seed layer and the second layer with a view to forming the bonding interface; d) removing the first carrier substrate so as to expose the first seed layer; and e) epitaxially growing at least one first junction on the first seed layer.

Abstract: A treatment method for a getter material is provided, including forming a protective layer on the thin layer getter material by performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen, wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material, and wherein a thickness of the protective layer is between approximately 1 nm and 10 nm.

Abstract: It consists of a microcomponent comprising a cavity (13) delimited by a cap (12) enclosing an active part (10) supported by a substrate (11). The cap (12) comprises a top wall (12a) comprising stiffening means with at least one projecting stiffening member (12b), said stiffening member (12b) being located between two recessed areas (12c) of the top wall (12a) and having one end (14) at a distance from the recessed areas (12c) without coming into contact with the substrate (11).

Abstract: A treatment method for a getter material, comprising at least one oxidation and/or nitriding step of getter material conducted under dry atmosphere of dioxygen and/or dinitrogen at pressure greater than approximately 10?2 mbar and at a temperature between approximately 50° C. and 120° C. and over a period between approximately 1 minute and 10 minutes, forming a protective layer composed of oxide and/or nitride of getter material.

Abstract: A process for manufacturing a device including a packaged microsystem. The manufactured device is in a form of a plane wafer, the microsystem being buried in the wafer. Therefore, the process is used to make a compound that may be used as a basis for other micro technology processes. Moreover, the process co-integrates electronic compounds when the device is being manufactured. The device is particularly suitable for MEMS, and particularly radiofrequency resonators.

Abstract: It consists of a microcomponent comprising a cavity (13) delimited by a cap (12) enclosing an active part (10) supported by a substrate (11) The cap (13) comprises a top wall (12a) comprising stiffening means with at least one projecting stiffening member (12b) said stiffening member (12b) being located between two recessed areas (12c) of the top wall (12a) and having one end (14) at a distance from the recessed areas (12c) without coming into contact with the substrate (11).

Abstract: This invention discloses a process for manufacturing a device (44) comprising a packaged microsystem (10?): the device manufactured according to the invention is in the form of a plane wafer, the microsystem (10?) being buried in the wafer. Therefore, the process according to the invention is used to make a compound that may be used as a basis for other micro technology processes. Moreover, the process according to the invention co-integrates electronic compounds (36, 38) when the device (44) is being manufactured. The device (44) according to the invention is particularly suitable for MEMS, and particularly radiofrequency resonators.