Patents by Inventor En-Sung Hu

En-Sung Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9859239
    Abstract: A re-distribution layer structure is adapted to be disposed on a substrate having a pad and a protective layer which has a first opening exposing a part of the pad. The re-distribution layer structure includes a first and a second patterned insulating layers and a re-distribution layer. The first patterned insulating layer is disposed on the protective layer and includes at least one trench and a second opening corresponding to the first opening. The re-distribution layer is disposed on the first patterned insulating layer and includes a pad portion and a wire portion. The pad portion is located on the first patterned insulating layer. The wire portion includes a body and at least one root protruding from the body and extending into the trench. The body extends from the pad portion to the pad exposed by the first and the second openings. The second patterned insulating layer covers the wire portion and exposes a part of the pad portion.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: January 2, 2018
    Assignee: ChipMOS Technologies Inc.
    Inventor: En-Sung Hu
  • Patent number: 9793229
    Abstract: A re-distribution layer structure is adapted to be disposed on a substrate having a pad and a protective layer which has a first opening exposing a part of the pad. The re-distribution layer structure includes a first and a second patterned insulating layers and a re-distribution layer. The first patterned insulating layer is disposed on the protective layer and includes at least one protrusion and a second opening corresponding to the first opening. The re-distribution layer is disposed on the first patterned insulating layer and includes a pad portion and a wire portion. The pad portion is located on the first patterned insulating layer. The wire portion includes a body and at least one trench caved in the body. The body extends from the pad portion to the pad exposed by the first and the second openings. The body covers the protrusion, and the at least one protrusion extends into the at least one trench. The second patterned insulating layer covers the wire portion and exposes a part of the pad portion.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: October 17, 2017
    Assignee: ChipMOS Technologies Inc.
    Inventor: En-Sung Hu