Patents by Inventor Erdan Gu
Erdan Gu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10694953Abstract: There is herein described light emitting medical devices and a method of manufacturing said medical devices. More particularly, there is described integrated light emitting medical devices (e.g. neural devices) capable of being used in optogenetics and a method of manufacturing said medical devices.Type: GrantFiled: December 19, 2012Date of Patent: June 30, 2020Assignee: Facebook Technologies, LLCInventors: James Small, James Ronald Bonar, Zheng Gong, Gareth John Valentine, Erdan Gu, Martin David Dawson
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Patent number: 10011491Abstract: A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2.Type: GrantFiled: April 13, 2015Date of Patent: July 3, 2018Assignee: Element Six Technologies LimitedInventors: Chee-Leong Lee, Erdan Gu, Geoffrey Alan Scarsbrook, Ian Friel, Martin David Dawson
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Publication number: 20150266741Abstract: A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2.Type: ApplicationFiled: April 13, 2015Publication date: September 24, 2015Inventors: Chee-Leong Lee, Erdan Gu, Geoffrey Alan Scarsbrook, Ian Friel, Martin David Dawson
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Publication number: 20150148643Abstract: There is herein described light emitting medical devices and a method of manufacturing said medical devices. More particularly, there is described integrated light emitting medical devices (e.g. neural devices) capable of being used in optogenetics and a method of manufacturing said medical devices.Type: ApplicationFiled: December 19, 2012Publication date: May 28, 2015Applicant: MLED LimitedInventors: James Small, James Ronald Bonar, Zheng Gong, John Gareth Valentine, Erdan Gu, Martin David Dawson
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Patent number: 9034200Abstract: The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.Type: GrantFiled: January 22, 2008Date of Patent: May 19, 2015Assignee: Element Six Limited Technologies LimitedInventors: Chee-Leong Lee, Erdan Gu, Geoffrey Alan Scarsbrook, Ian Friel, Martin David Dawson
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Publication number: 20100065871Abstract: An ultra violet light transmitting polymer is obtainable by the polymerisation of at least one compound having a substantially non UV absorbing core group comprising; linear or branched aliphatic hydrocarbons which may contain an aliphatic ring; or polydialkylsiloxanes. The compounds have at least one functional group comprising formula (A), (B) or (C):and each of the groups —R3— are, independently, linking groups which may be present or absent and, where present, may be a C1 to C10 hydrocarbon chain, which may contain an ether linkage. Methods for producing the polymers and uses for the polymers are also described.Type: ApplicationFiled: November 29, 2007Publication date: March 18, 2010Inventors: Richard A. Pethrick, Martin David Dawson, Erdan Gu, Allan R. Mackintosh, Alexander Jan-Christoph Kuehne
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Publication number: 20100047519Abstract: The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.Type: ApplicationFiled: January 22, 2008Publication date: February 25, 2010Inventors: Chee-Leong Lee, Erdan Gu, Geoffrey Alan Scarsbrook, Ian Friel, Martin David Dawson
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Patent number: 7566579Abstract: A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InAlGaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to green region of the visible spectrum. Certain optical devices, for example Vertical Cavity Surface Emitting Lasers (VCSELs) require great precision in the thickness of certain semiconductor layers. One aspect of the present invention provides a gallium-rich group III nitride layer (200, 201) and an adjacent layer of AlxInyGa1-x-yN layer (202). The AlxInyGa1-x-yN layer (202) acts as a fabrication facilitation layer and is selected to provide a good lattice match and high refractive index contrast with the gallium-rich group III nitride layer (200, 201). The high refractive index contrast permits in-situ optical monitoring. The extra layer (202) can be used as an etch marker or etch stop layer in subsequent processing and may be used in a lift-off process.Type: GrantFiled: November 4, 2005Date of Patent: July 28, 2009Assignee: University of StrathclydeInventors: Ian Michael Watson, Martin Dawson, Erdan Gu, Robert William Martin, Paul Roger Edwards
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Publication number: 20080067532Abstract: A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InAlGaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to green region of the visible spectrum. Certain optical devices, for example Vertical Cavity Surface Emitting Lasers (VCSELs) require great precision in the thickness of certain semiconductor layers. One aspect of the present invention provides a gallium-rich group III nitride layer (200, 201) and an adjacent layer of AlxInyGa1-x-yN layer (202). The AlxInyGa1-x-yN layer (202) acts as a fabrication facilitation layer and is selected to provide a good lattice match and high refractive index contrast with the gallium-rich group III nitride layer (200, 201). The high refractive index contrast permits in-situ optical monitoring. The extra layer (202) can be used as an etch marker or etch stop layer in subsequent processing and may be used in a lift-off process.Type: ApplicationFiled: November 4, 2005Publication date: March 20, 2008Inventors: Ian Watson, Martin Dawson, Erdan Gu, Robert Martin, Paul Edwards
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Patent number: 6765207Abstract: A method of producing a transition edge sensor comprises depositing a sensing material upon a substrate to form a sensing layer having an associated transition temperature. The transition temperature for the sensing layer is selected as desired. The desired transition temperature is produced by controlling the temperature of the substrate for the deposition process.Type: GrantFiled: April 30, 2002Date of Patent: July 20, 2004Assignee: Oxford Instruments Superconductivity LimitedInventors: David John Goldie, Erdan Gu
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Publication number: 20020171040Abstract: A method of producing a transition edge sensor comprises depositing a sensing material upon a substrate to form a sensing layer having an associated transition temperature. The transition temperature for the sensing layer is selected as desired. The desired transition temperature is produced by controlling the temperature of the substrate for the deposition process.Type: ApplicationFiled: April 30, 2002Publication date: November 21, 2002Applicant: Oxford Instruments Superconductivity LimitedInventors: David John Goldie, Erdan Gu