Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Abstract: A processing liquid supplying apparatus supplies a processing liquid to a processing unit which processes a substrate.

Abstract: A chemical solution feeder feeds a chemical solution to a predetermined feed target, and includes: a feed flow path that is connected at its one end to a supply source of a chemical solution at room temperature and at its other end to a feed target, to guide the chemical solution to the feed target from the supply source; a first filter that removes particles in a chemical solution at room temperature injected from the supply source into the feed flow path; a heating unit that heats the chemical solution having passed through the first filter; and a second filter that removes particles in the chemical solution at high temperature heated by the heating unit, flowing through the feed flow path toward the feed target, wherein the first filter is a hydrophilic filter and the second filter is a hydrophobic filter.

Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Abstract: A processing liquid supplying apparatus supplies a processing liquid to a processing unit which processes a substrate.

Abstract: A chemical solution feeder feeds a chemical solution to a predeteimined feed target, and includes: a feed flow path that is connected at its one end to a supply source of a chemical solution at room temperature and at its other end to a feed target, to guide the chemical solution to the feed target from the supply source; a first filter that removes particles in a chemical solution at room temperature injected from the supply source into the feed flow path; a heating unit that heats the chemical solution having passed through the first filter; and a second filter that removes particles in the chemical solution at high temperature heated by the heating unit, flowing through the feed flow path toward the feed target, wherein the first filter is a hydrophilic filter and the second filter is a hydrophobic filter.

Abstract: The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Abstract: A substrate processing system is constituted by a cleaning unit, a plurality of processing liquid supply units and a substrate processing apparatus. The cleaning unit supplies a first cleaning liquid to a processing unit of a processing liquid supply unit during cleaning of a pipe. The processing liquid supply unit stores the first cleaning liquid supplied from the cleaning unit in the processing liquid tank, and then supplies the first cleaning liquid in a processing liquid tank to the processing unit of the substrate processing apparatus through the pipe. The cleaning unit prepares a second cleaning liquid concurrently with cleaning of the pipe by the first cleaning liquid, and supplies the prepared second cleaning liquid to the processing liquid tank.

Abstract: A substrate processing apparatus supplies a resist stripping solution, formed by mixing sulfuric acid and a hydrogen peroxide solution, to a surface of a substrate. The substrate processing apparatus includes a nozzle that discharges the resist stripping solution toward the substrate, a hydrogen peroxide solution supply passage through which the hydrogen peroxide solution flows toward the nozzle, a plurality of sulfuric acid supply passages respectively connected to a plurality of mixing positions along the hydrogen peroxide solution supply passage that differ in flow passage length to the nozzle, and a sulfuric acid supply passage selecting unit that introduces the sulfuric acid from a sulfuric acid supply source to a sulfuric acid supply passage selected from among the plurality of sulfuric acid supply passages.

Abstract: A static random access memory comprising memory cells each composed of transfer MISFETs controlled by word lines and of a flip-flop circuit made of driver MISFETs and load MISFETs. The top of the load MISFETs is covered with supply voltage lines so that capacitor elements of a stacked structure are formed between the gate electrodes of the load MISFETs and the supply voltage lines.

Abstract: A static random access memory comprising memory cells each composed of transfer MISFETs controlled by word lines and of a flip-flop circuit made of driver MISFETs and load MISFETs. The top of the load MISFETs is covered with supply voltage lines so that capacitor elements of a stacked structure are formed between the gate electrodes of the load MISFETs and the supply voltage lines.

Abstract: A static random access memory comprising memory cells each composed of transfer MISFETs controlled by word lines and of a flip-flop circuit made of driver MISFETs and load MISFETs. The top of the load MISFETs is covered with supply voltage lines so that capacitor elements of a stacked structure are formed between the gate electrodes of the load MISFETs and the supply voltage lines.