Abstract: Provided herein are biparatopic antigen-binding constructs that specifically bind HER2. The biparatopic antigen-binding constructs comprise one antigen-binding moiety that binds to ECD2 of HER2, a second antigen-binding moiety that binds to ECD4 of HER2, and an Fc. At least one of the antigen-binding moieties is an scFv. The biparatopic antigen-binding constructs can be used in the treatment of cancer.

Abstract: Described is a method for regulating a volume of liquid delivered by a peristaltic pump and a peristaltic pump system that can be used to perform the method. The method includes sensing an ambient temperature of the peristaltic pump. The peristaltic pump includes a pump motor. At least one of a motor speed and a motor operation duration is determined from the sensed temperature, a selected volume of liquid to be delivered and a predetermined correspondence of the motor speed to ambient temperature. The pump motor is operated at the determined motor speed or for the determined motor operation duration to deliver the selected volume of liquid from the peristaltic pump.

Abstract: Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a top contact, a hard mask layer below the top contact, and a magnetic tunnel junction (MTJ) below the hard mask layer. The MRAM cell further comprises a diffusion barrier below the MTJ, a bottom contact below the diffusion barrier, and a magnetic liner arranged around the bottom contact.

Abstract: Embodiments are disclosed for a system that includes a data scrubbing circuit, a magnetoresistive random access memory (MRAM) having a memory array, and an analog persistent vital information circuit (APVIC) that performs a method. The method includes resetting weights corresponding to blocks of the memory array. The method further includes adjusting the weights based on a timer, data accesses on the memory blocks, and weight change values corresponding to the weights. The method also includes determining, in response to the timer, a data scrubbing threshold based on ambient temperature and magnetic field strength. The method additionally includes determining one of the weights meets the data scrubbing threshold. Further, the method includes providing, in response to the determination, an indication that a data scrubber, scrub one of the memory blocks corresponding to the weight that meets the data scrubbing threshold. Also, the method includes resetting the weight.

Abstract: A Very Long Instruction Word (VLIW) digital signal processor particularly adapted for single instruction multiple data (SIMD) operation on various operand widths and data sizes. A vector compare instruction compares first and second operands and stores compare bits. A companion vector conditional instruction performs conditional operations based upon the state of a corresponding predicate data register bit. A predicate unit performs data processing operations on data in at least one predicate data register including unary operations and binary operations. The predicate unit may also transfer data between a general data register file and the predicate data register file.

Abstract: A dolly has a frame; a plurality of rolling elements mounted on the frame for rotation about respective rotational axes generally parallel to the ground surface and defining a contact footprint of the dolly on the ground surface. The axes extend in a plane between a load contacting surface of the dolly and the ground surface at a distance between 30% and 50% of a height defined between the load contacting surface of the dolly and the ground surface. A swivel platform defines the load contacting surface extending at an elevation above the frame and mounted on the frame for rotation about a platform axis located within the contact footprint. An actuator unit is drivingly engaged to at least two rolling elements of the plurality of rolling elements, the at least two rolling elements disposed on opposite sides of the swivel platform. An on-board controller unit is operable to actuate the actuator unit.

Abstract: A memory system for storage access monitoring is provided. The memory system includes a media controller of a memory. An analog persistent circuit is coupled to the media controller and configured to monitor access to the memory. The analog persistent circuit stores persistent data related to memory access counts access signals from the command/address bus. A command/address bus is coupled to the analog persistent circuit. A memory array is communicatively coupled to the command address and the media controller.

Abstract: A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, a reference layer, and a diode structure, forming a write line disposed in electrical contact with the SHE rail, forming a protective dielectric layer covering a portion of the SOT-MRAM cell stack, and forming a read line disposed above and adjacent to the diode structure.

Abstract: A structured optical fiber cabling system configured to connect first and second layers of switches in a mesh network is disclosed. The system comprises groups of fiber optic ports arranged side-by-side, with each group including a plurality of the fiber optic ports distributed in a vertical direction. A plurality of fiber optic jumper assemblies each include a horizontal segment and a plurality of legs and fiber optic connectors extending from the horizontal segment, with each fiber optic connector configured to connect to a corresponding fiber optic port of the plurality of the fiber optic ports at the same vertical location in each group of the array.

Abstract: A fiber optic cable assembly comprises first and second cable legs each including a tight buffer surrounding coated optical fibers, and a reduced thickness buffer connecting region, with cable leg being devoid of any surrounding jacket and any tensile strength member. A fiber optic cable assembly devoid of a tensile strength member mechanically coupled to a connector comprises a travel limiting feature that serves to limit travel of the ferrule and inhibit ferrule decoupling when tension is applied to a fiber optic cable.

Abstract: An embodiment of the invention may include a magnetic random-access memory (MRAM) structure and method of making the structure. The MRAM structure may include a magnetic tunnel junction stack. The MRAM structure may include a magnetic liner located between the magnetic tunnel junction stack and a top contact, where the magnetic liner may be a ferromagnetic material. This may enable the magnetic liner to act as an independent variable to balance many of the magnetic parameters in the MTJ film stack in order to achieve zero magnetic field at the MTJ layer.

Abstract: Rubber compositions comprising at least one diene based polymer, a precipitated silica, a coupling agent package comprising a mercapto-functional alkylalkoxysilane and a blocked mercapto-functional alkylalkoxysilane, a deblocking agent, a vulcanizing package comprising at least one vulcanizing agent comprising sulfur and at least one accelerator, and a scorch modifier are provided herein.

Abstract: A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, a reference layer, and a diode structure, forming a write line disposed in electrical contact with the SHE rail, forming a protective dielectric layer covering a portion of the SOT-MRAM cell stack, and forming a read line disposed above and adjacent to the diode structure.

Abstract: Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a top contact, a hard mask layer below the top contact, and a magnetic tunnel junction (MTJ) below the hard mask layer. The MRAM cell further comprises a diffusion barrier below the MTJ, a bottom contact below the diffusion barrier, and a magnetic liner arranged around the bottom contact.

Abstract: Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a first heavy metal layer and a first magnetic tunnel junctions (MTJ) coupled to the first heavy metal layer. The first MTJ has a first area. The MRAM cell further comprises a second MTJ. The second MTJ is connected in series with the first MTJ, and the second MTJ has a second area that is different than the first area. The second MTJ shared a reference layer with the first MTJ. The MRAM cell further comprises a second heavy metal layer that is coupled to the second MTJ.

Abstract: An optical cable and method for forming an optical cable is provided. The cable includes a cable jacket including an inner surface defining a channel and an outer surface and also includes a plurality of optical fibers located within the channel. The cable includes a seam within the cable jacket that couples together opposing longitudinal edges of a wrapped thermoplastic sheet which forms the cable jacket and maintains the cable jacket in the wrapped configuration around the plurality of optical fibers. The method includes forming an outer cable jacket by wrapping a sheet of thermoplastic material around a plurality of optical core elements. The method includes melting together portions of thermoplastic material of opposing longitudinal edges of the wrapped sheet such that a seam is formed holding the sheet of thermoplastic material in the wrapped configuration around the core elements.

Abstract: A magnetoresistive random-access memory (MRAM) device includes a first cell selectively connected to a first bit line and a second cell selectively connected to a second bit line. The MRAM device further includes a shared transistor connected to the first cell and connected to the second cell. The MRAM device further includes a first selector device and a second selector device. The first selector device is configured to permit current to flow through the first cell to the shared transistor when a voltage applied to the first selector device is larger than a threshold activation voltage. The second selector device is configured to permit current to flow through the second cell to the shared transistor when a voltage applied to the second selector device is larger than a threshold activation voltage. The MRAM cell further includes a word line connected to a gate of the shared transistor.

Abstract: A magnetoresistive random-access memory (MRAM) device includes a first cell selectively connected to a first bit line and a second cell selectively connected to a second bit line. The MRAM device further includes a shared transistor connected to the first cell and connected to the second cell. The MRAM device further includes a first selector device and a second selector device. The first selector device is configured to permit current to flow through the first cell to the shared transistor when a voltage applied to the first selector device is larger than a threshold activation voltage. The second selector device is configured to permit current to flow through the second cell to the shared transistor when a voltage applied to the second selector device is larger than a threshold activation voltage. The MRAM cell further includes a word line connected to a gate of the shared transistor.

Abstract: An embodiment of the invention may include a magnetic random-access memory (MRAM) structure and method of making the structure. The MRAM structure may include a magnetic tunnel junction stack. The MRAM structure may include a magnetic liner located between the magnetic tunnel junction stack and a top contact, where the magnetic liner may be a ferromagnetic material. This may enable the magnetic liner to act as an independent variable to balance many of the magnetic parameters in the MTJ film stack in order to achieve zero magnetic field at the MTJ layer.

Abstract: A computer-implemented method is provided for detecting a dynamic object in a visual line of sight of an aircraft. The method includes implementing, by a computer system, the following operations: receiving at least two image frames; detecting a horizon within at least one of the at least two image frames; segmenting each of the at least two image frames into at least first and second search regions using the detected horizon, wherein the first search region is defined above the detected horizon in the at least two image frames and the second search region is defined below the horizon in the at least two image frames; determining, across the at least two image frames, a motion vector field within at least one of the first search region or the second search region; and identifying a detection proposal using the determined motion vector field.