Patents by Inventor Eric Aujol

Eric Aujol has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
    Patent number: 8557042
    Abstract: A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: October 15, 2013
    Assignee: Saint-Gobain Cristaux et Detecteurs
    Inventors: Eric Aujol, Jean-Pierre Faurie, Bernard Beaumont
  • METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF NITRIDE BY EPITAXIAL GROWTH ON A SUBSTRATE PREVENTING GROWTH ON THE EDGES OF THE SUBSTRATE
    Publication number: 20100074826
    Abstract: A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate.
    Type: Application
    Filed: December 8, 2006
    Publication date: March 25, 2010
    Inventors: Eric Aujol, Jean-Pierre Faurie, Bernard Beaumont
  • Process for producing an epitaxial layer of gallium nitride by the HVPE method
    Patent number: 6632725
    Abstract: A process for producing an epitaxial layer of gallium nitride (GaN) by hydride vapor-phase epitaxy (HVPE), as well as to the epitaxial layers which can be obtained by this process are provided. Such a process makes it possible to avoid parasitic GaN deposition on the walls of the reactor.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: October 14, 2003
    Assignees: Centre National de la Recherche Scientifique (CNRS), Universite Blaise Pascal
    Inventors: Agnès Trassoudaine, Robert Cadoret, Eric Aujol
  • Process for producing an epitaxial layer of gallium nitride by the HVPE method
    Publication number: 20030013222
    Abstract: A process for producing an epitaxial layer of gallium nitride (GaN) by hydride vapor-phase epitaxy (HVPE), as well as to the epitaxial layers which can be obtained by this process are provided. Such a process makes it possible to avoid parasitic GaN deposition on the walls of the reactor.
    Type: Application
    Filed: June 29, 2001
    Publication date: January 16, 2003
    Inventors: Agnes Trassoudaine, Robert Cadoret, Eric Aujol