Patents by Inventor Eric J. Tarsa

Eric J. Tarsa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140211497
    Abstract: An optical waveguide includes a body of optically transmissive material defined by outer edges and having a width substantially greater than an overall thickness thereof. The body of optically transmissive material includes a first side and a second side opposite the first side. An interior coupling cavity is defined by a surface intersecting the second side and extends from the second side toward the first side. The interior coupling cavity is disposed remote from edges of the body and is configured to receive an LED element. The body of optically transmissive material further includes a first array of light mixing cavities surrounding the interior coupling cavity and an extraction feature disposed on one of the first and second sides. The light extraction feature at least partially surrounds the interior coupling cavity.
    Type: Application
    Filed: December 9, 2013
    Publication date: July 31, 2014
    Applicant: Cree, Inc.
    Inventors: Zongjie Yuan, Jiayin Ma, Kurt S. Wilcox, Eric J. Tarsa
  • Publication number: 20140211503
    Abstract: According to one aspect, a waveguide includes a body exhibiting a total internal reflectance characteristic and having a first face and a second face opposite the first face wherein the first and second faces extend along a lateral direction and a coupling cavity adapted to receive a light emitting diode (LED) that is configured to direct light into the body. The body additionally includes an extraction feature disposed on one of the first and second faces and configured to direct light traveling through the body out of at least one of the first and second faces. The body further includes a redirection feature disposed at least in part between the first and second faces and disposed between the coupling cavity and the extraction feature along the lateral direction, and configured to redirect light traveling through the body laterally within the body.
    Type: Application
    Filed: December 9, 2013
    Publication date: July 31, 2014
    Applicant: Cree, Inc.
    Inventor: Eric J. Tarsa
  • Publication number: 20140191259
    Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material.
    Type: Application
    Filed: March 13, 2014
    Publication date: July 10, 2014
    Applicant: CREE, INC.
    Inventors: MICHAEL S. LEUNG, Eric J. Tarsa, James Ibbetson
  • Patent number: 8692277
    Abstract: Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.
    Type: Grant
    Filed: July 13, 2010
    Date of Patent: April 8, 2014
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Robert C. Glass, Charles M. Swoboda, Bernd Keller, James Ibbetson, Brian Thibeault, Eric J. Tarsa
  • Publication number: 20130329425
    Abstract: LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with planar surfaces that refract and/or reflect light within the package encapsulant. The packages can comprise a submount with one or more LEDs, and a blanket conversion material layer on the LEDs and the submount. The encapsulant can be on the submount, over the LEDs, and light reflected within the encapsulant will reach the conversion material, where it is absorbed and emitted omnidirectionally. Reflected light can now escape the encapsulant, allowing for efficient emission and a broader emission profile, when compared to conventional packages with hemispheric encapsulants or lenses. In certain embodiments, the LED package provides a higher chip area to LED package area ratio. By using an encapsulant with planar surfaces, the LED package can provide unique dimensional relationships between the various features and the LED package ratios, enabling more flexibility with different applications.
    Type: Application
    Filed: October 10, 2012
    Publication date: December 12, 2013
    Applicant: CREE, INC.
    Inventors: THEODORE LOWES, ERIC J. TARSA, STEN HEIKMAN, BERND KELLER, JESSE REIHERZER, HORMOZ BENJAMIN
  • Publication number: 20130328073
    Abstract: LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with planar surfaces that refract and/or reflect light within the package encapsulant. The packages can comprise a submount with a plurality of LEDs, which emit different colors of light, and a blanket conversion material layer on the LEDs and the submount. The encapsulant can be on the submount, over the LEDs, and light reflected within the encapsulant will reach the conversion material to be absorbed and emitted omnidirectionally. Reflected light can now escape the encapsulant, allowing for efficient emission and a broader emission profile, when compared to conventional packages with hemispheric encapsulants or lenses. The LED package can have a higher chip area to LED package area ratio. By using an encapsulant with planar surfaces, the LED package provides unique dimensional relationships between the features and LED package ratios, enabling more flexibility with different applications.
    Type: Application
    Filed: October 10, 2012
    Publication date: December 12, 2013
    Applicant: CREE, INC.
    Inventors: THEODORE LOWES, Eric J. Tarsa, Sten Heikman, Bernd Keller, Jesse Reiherzer, Hormoz Benjamin
  • Patent number: 8563339
    Abstract: One close loop system and method for electrophoretic deposition (EPD) of phosphor material on light emitting diodes (LEDs). The system comprises a deposition chamber sealed from ambient air. A mixture of phosphor material and solution is provided to the chamber with the mixture also being sealed from ambient air. A carrier holds a batch of LEDs in the chamber with the mixture contacting the areas of the LEDs for phosphor deposition. A voltage supply applies a voltage to the LEDs and the mixture to cause the phosphor material to deposit on the LEDs at the mixture contacting areas.
    Type: Grant
    Filed: June 21, 2006
    Date of Patent: October 22, 2013
    Assignee: Cree, Inc.
    Inventors: Eric J. Tarsa, Michael Leung, Bernd Keller, Robert Underwood, Mark Youmans
  • Patent number: 8426881
    Abstract: A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
    Type: Grant
    Filed: January 27, 2009
    Date of Patent: April 23, 2013
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Robert C. Glass, Charles M. Swoboda, Bernd Keller, James Ibbetson, Brian Thibeault, Eric J. Tarsa
  • Publication number: 20120280261
    Abstract: A light emitting diode (LED) for achieving an asymmetric light output includes a multilayered structure comprising a p-n junction, where at least one layer of the multilayered structure comprises a surface configured to provide a peak emission in a direction away from a normal to a mounting surface, the surface being a top or bottom surface of the layer.
    Type: Application
    Filed: May 4, 2011
    Publication date: November 8, 2012
    Applicant: Cree, Inc.
    Inventors: Eric J. Tarsa, Theodore D. Lowes, Bernd P. Keller
  • Publication number: 20120199852
    Abstract: An LED component includes, according to a first embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an optical lens overlying the LED chips and having a lens base attached to the substrate, where the LED chips are positioned to provide a peak emission shifted from a perpendicular centerline of the lens base. The LED component includes, according to a second embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an array of optical lenses, each optical lens overlying at least one of the LED chips and having a lens base attached to the substrate, where at least one of the LED chips is positioned to provide a peak emission shifted from a perpendicular centerline of the respective lens base.
    Type: Application
    Filed: February 4, 2011
    Publication date: August 9, 2012
    Applicant: CREE, INC.
    Inventors: Theodore D. Lowes, Eric J. Tarsa, Bernd P. Keller, David T. Emerson
  • Patent number: 8035117
    Abstract: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light.
    Type: Grant
    Filed: July 10, 2006
    Date of Patent: October 11, 2011
    Assignee: Cree, Inc.
    Inventors: Steven P. DenBaars, Eric J. Tarsa, Michael Mack, Bernd Keller, Brian Thibeault
  • Publication number: 20110169038
    Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material.
    Type: Application
    Filed: March 25, 2011
    Publication date: July 14, 2011
    Inventors: Michael S. Leung, Eric J. Tarsa, James Ibbetson
  • Patent number: 7915085
    Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material.
    Type: Grant
    Filed: September 18, 2003
    Date of Patent: March 29, 2011
    Assignee: Cree, Inc.
    Inventors: Michael S. Leung, Eric J. Tarsa, James Ibbetson
  • Publication number: 20100323465
    Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material.
    Type: Application
    Filed: August 24, 2010
    Publication date: December 23, 2010
    Inventors: Michael S. Leung, Eric J. Tarsa, James Ibbetson
  • Publication number: 20100283077
    Abstract: Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.
    Type: Application
    Filed: July 13, 2010
    Publication date: November 11, 2010
    Inventors: David B. Slater, JR., Robert C. Glass, Charles M. Swoboda, Bernd Keller, James Ibbetson, Brian Thibeault, Eric J. Tarsa
  • Publication number: 20090278156
    Abstract: A light emitting diode (LED) is disclosed comprising a plurality of semiconductor layers with a first contact on the bottom surface of the semiconductor layers and a second contact on the top surface of the semiconductor layer. A coating is included that comprises a cured binder and a conversion material that at least partially covers the semiconductor layers, wherein the second contact extends through the coating and is exposed on the same plane as the top surface of the coating. An electrical signal applied to the first and second contacts is conducted through the coating to the semiconductor layers causing the LED to emit light. In other embodiments first and second contacts are accessible from one side of the LED. A coating is included that comprises a cured binder and a conversion material. The coating at least partially covers the semiconductor layers, with the first and second contacts extending through the coating and exposed on the same plane as a surface of the coating.
    Type: Application
    Filed: July 21, 2009
    Publication date: November 12, 2009
    Inventors: MICHAEL S. LEUNG, Eric J. Tarsa, James Ibbetson
  • Publication number: 20090166658
    Abstract: A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
    Type: Application
    Filed: January 27, 2009
    Publication date: July 2, 2009
    Inventors: David B. Slater, JR., Robert C. Glass, Charles M. Swoboda, Bernd Keller, James Ibbetson, Brian Thibeault, Eric J. Tarsa
  • Patent number: 7420222
    Abstract: Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region.
    Type: Grant
    Filed: August 21, 2007
    Date of Patent: September 2, 2008
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Robert C. Glass, Charles M. Swoboda, Bernd Keller, James Ibbetson, Brian Thibeault, Eric J. Tarsa
  • Publication number: 20080173884
    Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
    Type: Application
    Filed: January 22, 2007
    Publication date: July 24, 2008
    Inventors: Ashay Chitnis, James Ibbetson, Arpan Chakraborty, Eric J. Tarsa, Bernd Keller, James Seruto, Yankun Fu
  • Patent number: 7202506
    Abstract: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light.
    Type: Grant
    Filed: March 17, 2000
    Date of Patent: April 10, 2007
    Assignee: Cree, Inc.
    Inventors: Steven P. DenBaars, Eric J. Tarsa, Michael Mack, Bernd Keller, Brian Thibeault