Abstract: A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

Abstract: A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

Abstract: A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

Abstract: A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

Abstract: An improved method for rapidly and accurately modifying small structures, including structures on a micron or nanometer scale, suitable for the repair of defects in lithographic photo-masks and semiconductors on a nano-scopic level. Features or samples repaired may be conductive or non-conductive. A single instrument can be employed to both observe the surface of the mask or wafer, and to effectuate the repair of conductive and non-conductive features thereon. Using a Stylus-Nano-Profilometer probe, rapid lateral strokes across the sample surface in a definable pattern at known high applied pressure are used to effectuate defect repair. The tip of the probe can also be dithered rapidly in a pattern or used as to create a jackhammer effect to more effectively remove material from the sample surface.

Abstract: An improved method for rapidly and accurately modifying small structures, including structures on a micron or nanometer scale, suitable for the repair of defects in lithographic photo-masks and semiconductors on a nano-scopic level. Features or samples repaired may be conductive or non-conductive. A single instrument can be employed to both observe the surface of the mask or wafer, and to effectuate the repair of conductive and non-conductive features thereon. Using a Stylus-Nano-Profilometer probe, rapid lateral strokes across the sample surface in a definable pattern at known high applied pressure are used to effectuate defect repair. The tip of the probe can also be dithered rapidly in a pattern or used as to create a jackhammer effect to more effectively remove material from the sample surface.

Abstract: A method of improving the precision and speed of probe microscopy. Direct geometric measurement of relevant date points allows more rapid determination of critical dimensions while improving measurement precision through minimized system drift. Precision and throughput is further improved by deflection-based measurement. Sensitivity to soft contacts is improved by using diagonal approach trajectories for the probe tip (20). And throughput is improved while risk of damage to tip and/or surface is reduced by using lateral force detection.