Abstract: A heat flux sensor comprising: an array of nanofilaments suspended with respect to a support, each nanofilament comprising an electrically conducting material, the array being able to be biased by an electric power source to circulate an electric current in each of the nanofilaments, at least one resonator of the nanoelectro-mechanical system (NEMS) type comprising: a beam consisting of a nanofilament forming a side of the array, an actuation device able to generate a vibration of the beam under the effect of an excitation signal, a detection device configured to measure a displacement of the beam during the vibration and emit an output signal having a resonance at the resonant frequency of the resonator, the resonant frequency depending on the intensity of the electric current flowing through the beam, a temperature variation of the array of heating nanofilaments induced by a variation in a characteristic of a fluid surrounding the array causing an intensity variation of the current flowing through the b

Abstract: The invention relates to a heat flux sensor including: a heating wire (1) including a material capable of being taken to a determined temperature by Joule effect, suited to being connected to an electrical source, a resonator (2) of nano electro mechanical system (NEMS) type including: a beam (20) suspended with respect to a support (21), an actuating device (22) capable of generating a vibration of said beam under the effect of an excitation signal, a detection device configured to measure a displacement of said beam in the course of said vibration and to emit an output signal having a resonance at the resonance frequency of the resonator, said resonance frequency depending on the temperature of the beam, wherein one end (20a) of the beam (20) is integral with the heating wire (1) so as to enable a conduction of heat from the heating wire to the beam, a variation in temperature of the heating wire induced by a variation in a characteristic of a fluid surrounding said wire causing a variation in the reson

Abstract: A microelectromechanical gas sensor including a fixed part, at least one suspended part in relation to fixed part, at least one sensitive zone carried on the suspended part, the sensitive zone being able to adsorb/absorb and desorb gaseous species or families of gaseous species, a heater for heating at least the sensitive zone, a detector for detecting the adsorption/absorption and desorption of gaseous species or families of gaseous species on the sensitive zone, a controller of controlling the heater so that the heating is applied to at least the sensitive zone with one or more temperature profiles ensuring the adsorption/absorption and desorption of the gaseous species in a controlled manner so as to obtain an individual desorption of each species or families of gaseous species.

Abstract: The invention relates to a heat flux sensor including: a heating wire (1) including a material capable of being taken to a determined temperature by Joule effect, suited to being connected to an electrical source, a resonator (2) of nano electro mechanical system (NEMS) type including: a beam (20) suspended with respect to a support (21), an actuating device (22) capable of generating a vibration of said beam under the effect of an excitation signal, a detection device configured to measure a displacement of said beam in the course of said vibration and to emit an output signal having a resonance at the resonance frequency of the resonator, said resonance frequency depending on the temperature of the beam, wherein one end (20a) of the beam (20) is integral with the heating wire (1) so as to enable a conduction of heat from the heating wire to the beam, a variation in temperature of the heating wire induced by a variation in a characteristic of a fluid surrounding said wire causing a variation in the reson

Abstract: A heat flux sensor comprising: an array of nanofilaments suspended with respect to a support, each nanofilament comprising an electrically conducting material, the array being able to be biased by an electric power source to circulate an electric current in each of the nanofilaments, at least one resonator of the nanoelectro-mechanical system (NEMS) type comprising: a beam consisting of a nanofilament forming a side of the array, an actuation device able to generate a vibration of the beam under the effect of an excitation signal, a detection device configured to measure a displacement of the beam during the vibration and emit an output signal having a resonance at the resonant frequency of the resonator, the resonant frequency depending on the intensity of the electric current flowing through the beam, a temperature variation of the array of heating nanofilaments induced by a variation in a characteristic of a fluid surrounding the array causing an intensity variation of the current flowing through the b

Abstract: A process for making at least one porous area (ZP) of a microelectronic structure in at least one part of an conducting active layer (6), the active layer (6) forming a front face of a stack, the stack comprising a back face (2) of conducting material and an insulating layer (4) interposed between the active layer (6) and the back face (2), said process comprising the steps of: a) making at least one contact pad (14) between the back face (2) and the active layer (6) through the insulation layer (2), b) placing the stack into an electrochemical bath, c) applying an electrical current between the back face (2) and the active layer (6) through the contact pad (14) causing porosification of an area (ZP) of the active layer (6) in the vicinity of the contact pad (14), d) forming the microelectronic structure.

Abstract: A microelectromechanical gas sensor including a fixed part, at least one suspended part in relation to fixed part, at least one sensitive zone carried on the suspended part, the sensitive zone being able to adsorb/absorb and desorb gaseous species or families of gaseous species, a heater for heating at least the sensitive zone, a detector for detecting the adsorption/absorption and desorption of gaseous species or families of gaseous species on the sensitive zone, a controller of controlling the heater so that the heating is applied to at least the sensitive zone with one or more temperature profiles ensuring the adsorption/absorption and desorption of the gaseous species in a controlled manner so as to obtain an individual desorption of each species or families of gaseous species.

Abstract: Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer: a) formation of a first layer, at least part of which is porous, b) formation on the first layer of a layer made of one (or several) materials providing the mechanical properties of the structure, called the intermediate layer, c) formation on the intermediate layer of a second layer, at least part of which is porous, d) formation of said structure in the stack composed of the first layer, the intermediate layer and the second layer, e) release of said structure by at least partial removal of the sacrificial layer.

Abstract: A device comprising a substrate comprising at least one microelectronic and/or nanoelectronic structure comprising at least one sensitive portion and one fluid channel (2) defined between said substrate and a cap (6), where said fluid channel (2) comprises at least two apertures to provide a flow in said channel, where said microelectronic and/or nanoelectronic structure is located within the fluid channel, where said cap is assembled with the substrate at an assembly interface, where said device comprises electrical connections between said microelectronic and/or nanoelectronic structure and the exterior of the fluid channel (2), where said electrical connections (8) are formed by vias made through the substrate (4) directly below the microelectronic and/or nanoelectronic structure, and in electrical contact with said microelectronic and/or nanoelectronic structure.

Abstract: Device including a substrate including at least one microelectronic and/or nanoelectronic structure (NEMS) having a sensitive portion and a fluid channel. The fluid channel includes two lateral walls, an upper wall connecting the two lateral walls, a lower wall formed by the substrate, and at least two openings in order to provide a circulation in the fluid channel, with the openings being defined between the two lateral walls, with the structure being located inside the fluid channel. Electrical connection lines extend between the structure and the outside of the fluid channel, with the connection lines being carried out on the substrate and passing under the lateral walls. The device also includes an intermediate layer having a planar face in contact with base faces of said lateral walls. The connection lines are at least partially covered by the intermediate layer at least immediately above base faces of the lateral walls.

Abstract: A method of forming a microelectronic device comprising, on a same substrate, at least one electro-mechanical component provided with a suspended structure and at least one transistor, the method comprising a step of release of the suspended structure from the electromechanical component after having formed metal interconnection levels of components.

Abstract: A process for making at least one porous area (ZP) of a microelectronic structure in at least one part of an conducting active layer (6), the active layer (6) forming a front face of a stack, the stack comprising a back face (2) of conducting material and an insulating layer (4) interposed between the active layer (6) and the back face (2), said process comprising the steps of: a) making at least one contact pad (14) between the back face (2) and the active layer (6) through the insulation layer (2), b) placing the stack into an electrochemical bath, c) applying an electrical current between the back face (2) and the active layer (6) through the contact pad (14) causing porosification of an area (ZP) of the active layer (6) in the vicinity of the contact pad (14), d) forming the microelectronic structure.

Abstract: Device including a substrate including at least one microelectronic and/or nanoelectronic structure (NEMS) having a sensitive portion and a fluid channel. The fluid channel includes two lateral walls, an upper wall connecting the two lateral walls, a lower wall formed by the substrate, and at least two openings in order to provide a circulation in the fluid channel, with the openings being defined between the two lateral walls, with the structure being located inside the fluid channel. Electrical connection lines extend between the structure and the outside of the fluid channel, with the connection lines being carried out on the substrate and passing under the lateral walls. The device also includes an intermediate layer having a planar face in contact with base faces of said lateral walls. The connection lines are at least partially covered by the intermediate layer at least immediately above base faces of the lateral walls.

Abstract: Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer: a) formation of a first layer, at least part of which is porous, b) formation on the first layer of a layer made of one (or several) materials providing the mechanical properties of the structure, called the intermediate layer, c) formation on the intermediate layer of a second layer, at least part of which is porous, d) formation of said structure in the stack composed of the first layer, the intermediate layer and the second layer, e) release of said structure by at least partial removal of the sacrificial layer.

Abstract: A device comprising a substrate comprising at least one microelectronic and/or nanoelectronic structure comprising at least one sensitive portion and one fluid channel (2) defined between said substrate and a cap (6), where said fluid channel (2) comprises at least two apertures to provide a flow in said channel, where said microelectronic and/or nanoelectronic structure is located within the fluid channel, where said cap is assembled with the substrate at an assembly interface, where said device comprises electrical connections between said microelectronic and/or nanoelectronic structure and the exterior of the fluid channel (2), where said electrical connections (8) are formed by vias made through the substrate (4) directly below the microelectronic and/or nanoelectronic structure, and in electrical contact with said microelectronic and/or nanoelectronic structure.

Abstract: A method of forming a microelectronic device comprising, on a same substrate, at least one electro-mechanical component provided with a suspended structure and at least one transistor, the method comprising a step of release of the suspended structure from the electromechanical component after having formed metal interconnection levels of components.

Abstract: A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region.

Abstract: A method for producing a device including at least one integrated circuit and at least one N/MEMS. The method produces the N/MEMS in at least one upper layer arranged at least above a first section of a substrate, produces the integrated circuit in a second section of the substrate and/or in a semiconductor layer arranged at least above the second section of the substrate, and further produces a cover encapsulating the N/MEMS from at least one layer used for production of a gate in the integrated circuit and/or for producing at least one electrical contact of the integrated circuit.

Abstract: The device resonant comprises a plurality of synchronized oscillators. Each oscillator comprises a resonator which comprises detection means providing detection signals representative of oscillation of the resonator to a feedback loop connected to an excitation input of the resonator. The detection signals control the conductivity of the feedback loop of the oscillator. The excitation inputs of all the resonators are connected to a common point which constitutes the output of the resonant device. A capacitive load is connected between said common point and a reference voltage.

Abstract: A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region.