Abstract: Atomic layer deposition (ALD) methods and barrier films are disclosed. A method of performing ALD includes placing a substrate proximal an electrode coupled to a power supply, exposing the substrate to an oxygen-containing gas or a nitrogen-containing gas at or below 0.8 Torr, and applying, with the power supply, a voltage to the electrode of at least 700 Volts to induce a plasma state in the oxygen-containing gas or the nitrogen-containing gas proximal the substrate. High quality barrier films can be made with the methods.

Abstract: Atomic layer deposition (ALD) methods and barrier films are disclosed. A method of performing ALD includes placing a substrate proximal an electrode coupled to a power supply, exposing the substrate to an oxygen-containing gas or a nitrogen-containing gas at or below 0.8 Torr, and applying, with the power supply, a voltage to the electrode of at least 700 Volts to induce a plasma state in the oxygen-containing gas or the nitrogen-containing gas proximal the substrate. High quality barrier films can be made with the methods.

Abstract: Water-insensitive methods for forming metal oxide films disclosed herein can be used to form coated substrates. The methods can be used with moisture-laden substrates. Moisture-sensitive films can be deposited on the metal oxide films.

Abstract: Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.

Abstract: The present disclosure relates to metal oxide barrier films and particularly to methods for depositing high-quality barrier films. Methods are disclosed that are capable of producing thin barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m2·day) after exposure to extreme temperatures and humidity. Methods are disclosed for making such films on a continuous web.

Abstract: A method of forming a thin barrier film of a mixed metal-silicon-oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 ?ngstroms or less is formed on the substrate.

Abstract: Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones and through a third precursor zone interposed between the first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides spaced apart along the first and second precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between the first and second precursor zones and through the third precursor zone, it passes through a first series of flow-restricting passageways of a first isolation region interposed between the first and third precursor zones and a second series of flow-restricting passageways of a second isolation region interposed between the second and third precursor zones.

Abstract: A system for depositing a thin film on a flexible substrate comprises a plurality of processing zones spaced apart by an isolation zone, a plasma generator for generating a plasma region proximal to a pathway along which the substrate travels, and a substrate transport mechanism for guiding the substrate back and forth between the processing zones so that the substrate is transported past and exposed to the plasma region when the system is in use.

Abstract: The present disclosure relates to metal oxide barrier films and particularly to high-speed methods for depositing such barrier films. Methods are disclosed that are capable of producing barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m2·day). Methods are disclosed for continuously transporting a substrate within an atomic layer deposition (ALD) reactor and performing a limited number of ALD cycles to achieve a desired WVTR.

Abstract: Systems and methods for depositing a thin film on a flexible substrate involve guiding the flexible substrate along a spiral transport path back and forth between spaced-apart first and second precursor zones so that the substrate transits through the first and second precursor zones multiple times and each time through an intermediate isolation zone without mechanically contacting an outer surface of the substrate with a substrate transport mechanism, thereby inhibiting mechanical damage to the thin film deposited on the outer surface, which may improve barrier layer performance of the thin film.

Abstract: Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.

Abstract: A method of forming a thin barrier film of a mixed metal-silicon-oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 ?ngstroms or less is formed on the substrate.

Abstract: Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides, such as rollers, spaced apart along the precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between precursor zones, it passes through a series of flow-restricting passageways of an isolation zone into which an inert gas is injected to inhibit migration of precursor gases out of the precursor zones. Also disclosed are systems and methods for utilizing more than two precursor chemicals and for recycling precursor gases exhausted from the precursor zones.

Abstract: Embodiments include low voltage embedded memory having conductive oxide and electrode stacks. A material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.

Abstract: A system for forming a thin film on a substrate uses a plasma to activate at least one gaseous precursor in a plasma generator fluidly coupled with a reaction space. The plasma generator is operative to generate a plasma from at least a portion of the precursor gas with at least one pair of plasma electrodes, one plasma electrode having a non-native electrically conductive adlayer exhibiting property characteristics that cause the adlayer to be substantially conserved and chemically active with at least one of the gases present within the plasma generation region.

Abstract: A system for forming a thin film on a substrate uses a plasma to activate at least one gaseous precursor in a plasma generator fluidly coupled with a reaction space. The plasma generator is operative to generate a plasma from at least a portion of the precursor gas with at least one pair of plasma electrodes, one plasma electrode having a non-native electrically conductive adlayer exhibiting property characteristics that cause the adlayer to be substantially conserved and chemically active with at least one of the gases present within the plasma generation region.

Abstract: A system for depositing a thin film on a flexible substrate comprises a plurality of processing zones spaced apart by an isolation zone, a plasma generator for generating a plasma region proximal to a pathway along which the substrate travels, and a substrate transport mechanism for guiding the substrate back and forth between the processing zones so that the substrate is transported past and exposed to the plasma region when the system is in use.

Abstract: A method of forming a thin barrier film of a mixed metal-silicon-oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 ?ngstroms or less is formed on the substrate.

Abstract: Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.

Abstract: A method of radical-enhanced atomic layer deposition (REALD) involves alternating exposure of a substrate to a first precursor gas and to radicals, such as monatomic oxygen radicals (O.), generated from an oxygen-containing second precursor gas, while maintaining spatial or temporal separation of the radicals and the first precursor gas. Simplified reactor designs and process control are possible when the first and second precursor gases are nonreactive under normal processing conditions and can therefore be allowed to mix after the radicals recombine or otherwise abate. In some embodiments, the second precursor gas is an oxygen-containing compound, such as carbon dioxide (CO2) or nitrous oxide (N2O) for example, or a mixture of such oxygen-containing compounds, and does not contain significant amounts of normal oxygen (O2).