Patents by Inventor Eric Richard Kent

Eric Richard Kent has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process based metrology target design
    Patent number: 10296681
    Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: May 21, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Guangqing Chen, Shufeng Bai, Eric Richard Kent, Yen-Wen Lu, Paul Anthony Tuffy, Jen-Shiang Wang, Youping Zhang, Gertjan Zwartjes, Jan Wouter Bijlsma
  • PROCESS BASED METROLOGY TARGET DESIGN
    Publication number: 20180268093
    Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
    Type: Application
    Filed: May 17, 2018
    Publication date: September 20, 2018
    Applicant: ASML Netherlands B.V.
    Inventors: Guangqing CHEN, Shufeng Bai, Eric Richard Kent, Yen-Wen Lu, Paul Anthony Tuffy, Jen-Shiang Wang, Youping Zhang, Gertjan Zwartjes, Jan Wouter Bijlsma
  • Process based metrology target design
    Patent number: 10007744
    Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: June 26, 2018
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Guangqing Chen, Shufeng Bai, Eric Richard Kent, Yen-Wen Lu, Paul Anthony Tuffy, Jen-Shiang Wang, Youping Zhang, Gertjan Zwartjes, Jan Wouter Bijlsma
  • Method and apparatus for design of a metrology target
    Patent number: 9804504
    Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.
    Type: Grant
    Filed: May 13, 2016
    Date of Patent: October 31, 2017
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Guangqing Chen, Eric Richard Kent, Jen-Shiang Wang, Omer Abubaker Omer Adam
  • METHOD AND APPARATUS FOR DESIGN OF A METROLOGY TARGET
    Publication number: 20160252820
    Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.
    Type: Application
    Filed: May 13, 2016
    Publication date: September 1, 2016
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Guangqing CHEN, Eric Richard KENT, Jen-Shiang WANG, Omer Abubaker Omer ADAM
  • Method and apparatus for design of a metrology target
    Patent number: 9355200
    Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: May 31, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Guangqing Chen, Eric Richard Kent, Jen-Shiang Wang, Omer Abubaker Omer Adam
  • PROCESS BASED METROLOGY TARGET DESIGN
    Publication number: 20160140267
    Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
    Type: Application
    Filed: November 13, 2015
    Publication date: May 19, 2016
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Guangqing CHEN, Shufeng BAI, Eric Richard KENT, Yen-Wen LU, Paul Anthony TUFFY, Jen-Shiang WANG, Youping ZHANG, Gertjan ZWARTJES, Jan Wouter BIJLSMA
  • METHOD AND APPARATUS FOR DESIGN OF A METROLOGY TARGET
    Publication number: 20150186581
    Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.
    Type: Application
    Filed: December 19, 2014
    Publication date: July 2, 2015
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Guangqing Chen, Eric Richard Kent, Jen-Shiang Wang, Omer Abubaker Omer Adam