Abstract: A battery cabinet with a plurality of spaced apart shelves of equal width and depth. Each shelf supports a removable battery module. In turn, each module has a fixed adapter that holds batteries as a battery bank where the module and adapter occupy most of the space between shelves. Battery cells are vertically or horizontally aligned with terminals joined to comb-shaped straps with blades joined to battery terminals. The space between blades allows for thermal expansion without wear on terminals.

Abstract: A method includes transmitting a request for a computer-readable routing diagram, such as a wiring diagram, a pneumatic or hydraulic line diagram, or an optical cable diagram. The method also includes receiving, in response to the request, a routing diagram including a connectable component and at least a portion of a routing set. The connectable component is associated with both a connectable component identifier and the routing set. The routing set contains one or more routable components, such as electrical circuits, pneumatic or hydraulic lines, or optical cables. Further, the method includes displaying, on a display, the routing diagram and at least the portion of the routing set highlighted. Displaying at least the portion of the routing set highlighted occurs in response to an occurrence of the connectable component being selected from the routing diagram displayed on the display or in response to the request including the connectable component identifier.

Abstract: The present disclosure provides methods for preparing MCL1 inhibitors or a salt thereof and related key intermediates.

Abstract: A surgical robotic system is disclosed to include an operating table, a plurality of robotic arms and surgical instruments, a user console, and a control tower. The plurality of robotic arms are mounted on the operating table and can be stowed folded under the table for storage. The user console has one or more user interface devices, which function as master devices to control the plurality of surgical instruments.

Abstract: A battery cabinet with a plurality of spaced apart shelves of equal width and depth. Each shelf supports a removable battery module. In turn, each module has a fixed adapter that holds batteries as a battery bank where the module and adapter occupy most of the space between shelves. Battery cells are vertically or horizontally aligned with terminals joined to comb-shaped straps with blades joined to battery terminals. The space between blades allows for thermal expansion without wear on terminals.

Abstract: A method of testing a subject for a propensity to develop, diagnose, or treat ALSV-induced infection or cancer, comprising the steps of obtaining a cell, tissue, or fluid sample from the subject, processing the sample to isolate DNA from the sample, and examining the DNA isolated from the sample to detect the presence of the ALSV LTR. Preferably, the DNA is examined using a PCR-based assay with at least one primer set or any combination of the individual primers in first round or second round reactions from the group consisting of: J1F (SEQ ID NO: 22)/J1R (SEQ ID NO: 24), J1F (SEQ ID NO: 22)/J2R (SEQ ID NO: 25), J2F (SEQ ID NO: 23)/J1R (SEQ ID NO: 24), J2F (SEQ ID NO: 23)/J2R (SEQ ID NO: 25), J1F (SEQ ID NO: 22)/J3R (SEQ ID NO: 26), AL1D (SEQ ID NO: 1)/ALIVR1 (SEQ ID NO: 21), ALIVF1 (SEQ ID NO: 20)/ALIVR1 (SEQ ID NO: 21), AL1D (SEQ ID NO: 1)/NAL2B (SEQ ID NO: 18), ALIVF1 (SEQ ID NO: 20)/NAL2B (SEQ ID NO: 18), AL1D (SEQ ID NO: 1)/ALXB (SEQ ID NO: 19).

Abstract: A method of manufacturing a semiconductor component includes providing a substrate (110) with a surface (119), providing a layer (120) of undoped gallium arsenide over the surface of the substrate, forming a gate contact (210) over a first portion of the layer, and removing a second portion of the layer.

Abstract: A method of testing a subject for a propensity to develop, diagnose, or treat ALSV-induced cancer, comprising the steps of obtaining a cell or tissue sample from the subject, processing the sample to isolate DNA from the sample, and examining the DNA isolated from the sample to detect the presence of the ALSV LTR. The sample can be from a cell, a tissue or a tumor. Preferably, the DNA is examined using a PCR-based assay with at least one primer set from the group consisting of: AL1D (SEQ ID NO:1)/AL2B (SEQ ID NO:2), nprA181 (SEQ ID NO:3)/nprA308 (SEQ ID NO:4), nprA271(SEQ ID NO:5)/AL2B (SEQ ID NO:2), RAVO-1(SEQ ID NO:6)/RAVO-2(SEQ ID NO:7), AL1D(SEQ ID NO:1)/A-Au(SEQ ID NO: 13), S-Au(SEQ ID NO:12)/A-Au(SEQ ID NO:13), and nprA271(SEQ ID NO:5)/A-Au(SEQ ID NO:13), Sn271J(SEQ ID NO:14)/A-AuJ (SEQ ID NO:15).

Abstract: An architectural support comprised of various splines, key ways, and collars which interlock and when assembled form a complete unit. This unit may be used as an architectural support in the construction or fabrication of a table, display, cabinet, stand, and platform. This architectural support in the above items would be used as a table leg, support leg, or door pull. In addition, the architectural support could be used for decorative or aesthetic purposes.

Abstract: An ionization gas analyzer system includes an ionization chamber including ionization electrodes contained therein. The ionization chamber contains a test gas or gas mixture. A high voltage generator is coupled to the electrodes and provides variable high voltage pulses to the ionization electrodes. An ionization voltage analyzer is coupled to the ionization chamber and receives ionization voltage information from the plurality of ionization electrodes in response to the variable high voltages pulses. The ionization voltage analyzer produces a gas code identifier in response to the plurality of ionization voltages by defining a code based on which of the ionization voltages exceed an arbitrarily established reference level ionization voltage. A single ionization electrode system can be used to determine a concentration of a particular gas.

Abstract: A container, e.g., case or bag, has an internal compartment with an access opening that is entirely closed with a cover having a clasp that cooperates with a latch of an electronic lock carried on the container. Preferably, the cover carries a key pad on its external surface and the key pad is in circuit to an alarm system that includes a control unit, power supply, motion and/or shock detector, and an audible alarm such as a siren. Most preferably, the power supply comprises one and preferably a pair of panels of solar cells which are also located on an external surface of the top cover. The container has one or more handles which can include a shoulder carrying strap. Preferably the container is formed of a thermally insulating material so that the container also serves as a cooler for beverage cans and the like.

Abstract: A method for growing high quality epitaxial films using low pressure MOCVD that includes providing a substrate that is misoriented from a singular plane, placing the substrate into an MOCVD reactor at a total pressure of less than 0.2 atmospheres and then growing an epitaxial film on the substrate. When providing a misoriented gallium arsenide substrate, the MOCVD reactor is set at a temperature in the range of 650 to 750 degrees centigrade to grow an aluminum gallium arsenide film. This temperature is substantially lower than that at which aluminum gallium arsenide epitaxial films are commonly grown and the resulting film has a smooth surface morphology and enhanced photoluminesence properties.

Abstract: A permeable tube is inserted in a processing gas line to allow impurities surrounding the permeable tube to enter the processing line. By plumbing a steel tube in parallel with the permeable tube the process carrier gas can be switched from one tube to the other in rapid succession to allow pure or impure gases to enter into a reaction chamber. This can permit the growth of alternating layers of differently doped materials. As an example, it has been discovered that incorportaing small amounts of oxygen into an AlGaAs layer will produce a semi-insulating layer.

Abstract: Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury cadmium telluride include diffusion of a quantity of lithium into an already existing body of mercury cadmium telluride. Formation of NP junctions and P-P+ regions are disclosed using the compositions and methods of the present invention.

Abstract: Mercury cadmium telluride having a quantity of an acceptor material selected from Group VA of the Periodic Table, consisting of nitrogen, phosphorus, arsenic and antimony and bismuth dispersed therein, preferably in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Most preferred are phosphorus, arsenic and antimony. Also disclosed are junctions formed by two adjacent regions of mercury cadmium telluride in which one of the regions contains an acceptor concentration increasing amount of nitrogen phosphorus, arsenic, bismuth or antimony. A method is disclosed which permits diffusion of these additives into a body of already formed mercury cadmium telluride.

Abstract: Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclosed are PN junctions formed using this donor material. A method of introducing the donor material is additionally disclosed.

Abstract: Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury cadmium telluride include diffusion of a quantity of lithium into an already existing body of mercury cadmium telluride. Formation of NP junctions and P-P+ regions are disclosed using the compositions and methods of the present invention.

Abstract: Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.

Abstract: Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.