Abstract: A stable front contact current collector grid 36 is provided for thin-film photovoltaic devices. The current collector grid 36 is deposited on a textured patterned surface 35 of an optically transparent electrically conductive layer 34 that insures stable bonding between the current collector grid 36 and the transparent conductive layer 34. The photovoltaic device 30 includes a substrate 32; an optically transparent electrically conductive layer 34 having a textured patterned surface 35; a front contact current collector grid 36; a first semiconductor layer 38; a second semiconductor layer 40; and an electrically conductive film 42 in contact with the second semiconductor layer.

Abstract: Thin films of Hg.sub.1-x Cd.sub.x Te with controlled x greater than 0.5 are cathodically deposited on a thin CdS film over a conductive film of ITO deposited on a glass substrate. Depositing a conductive film on the electrodeposited Hg.sub.1-x Cd.sub.x Te treated to provide a Te-rich surface for a good ohmic contact forms an improved solar cell.

Abstract: A stable front contact current collector grid 116 is provided for photovoltaic devices. The current collector grid 116 is disposed between two semiconductor layers, 118 and 119, each semiconductor layer having the same conductivity type. The photovoltaic device utilizes a substrate 112; an optically transparent electrically conductive layer 114; a first layer of semiconductor material 118; a front contact current collector grid 116; a second layer of semiconductor material 119 having the same conductivity type as the first semiconductor layer; a third layer of semiconductor material 120 having a conductivity type opposite from that of the first and second semiconductor layers; and an electrically conductive film 122 in contact with the third semiconductor layer.

Abstract: Thin films of Hg.sub.1-x Cd.sub.x Te with controlled x greater than 0.5 are cathodically deposited on a thin CdS film over a conductive film of ITO deposited on a glass substrate. Depositing a conductive film on the electrodeposited Hg.sub.1-x Cd.sub.x Te treated to provide a Te-rich surface for a good ohmic contact forms an improved solar cell.

Abstract: A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.