Abstract: A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a gallium arsenide substrate and a layer of aluminum gallium arsenide on the layer of short-lifetime gallium arsenide. The short-lifetime gallium arsenide is grown at a temperature below approximately 550° C. so as to have a lifetime less than approximately 500 picoseconds. A stack of compound semiconductor layers is then epitaxially grown on the layer of aluminum gallium arsenide of the buffer and an Emode field effect transistor is formed in the stack.

Abstract: A method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a temperature of at least 550.degree. C for sufficient time to diffuse the donor material into the body. In a preferred embodiment, the heating is done in the presence of a source of mercury vapor pressure other than the body of semiconductor.

Abstract: A method of adjusting donor concentration in a body of mercury cadmium telluride comprising the steps of contacting the mercury cadmium telluride with a quantity of donor material selected from the group consisting of gallium and gallium alloys containing up to 3% of aluminum, tin or cadmium and heating the body at a temperature of at least 200.degree. C for a sufficient time to diffuse the donor material within the body. The donor material is placed in contact with the body of mercury cadmium telluride by immersing the body in a molten quantity of the donor material to wet the surface thereof. Further included is the step of removing any undistributed donor material after heating. Also disclosed is a method of adjusting the donor concentration in the first region of mercury cadmium telluride with respect to a second adjacent region by practicing the process of this invention on the first region only.

Abstract: Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclosed are PN junctions formed using this donor material. A method of introducing the donor material is additionally disclosed.