Abstract: A method of patterning a multilayer, dielectric color filter is described. The method includes depositing a multilayer, dielectric color filter on a substrate having top, bottom and multiple intermediate layers; and applying a patternable mask onto the top layer to provide selected openings through the mask. The method further includes removing the top layer through the selected openings in the patterned mask using a first dry etch, the patterned mask and the multiple intermediate layers of the filter being resistant to this first dry etch, to provide openings to the multiple intermediate layers of the filter.

Abstract: A method of forming optical light guides through silicon is disclosed wherein such light guides extend from a first (or front) surface along a preferred crystallographic direction to a second (or back) surface.

Abstract: A mask is described which enables the fabrication of features in GaAs such as waveguides, channels, facets, mesas, and mirrors by dry etch processing in chlorine containing ambients. The mask consists of an amorphous form of carbon which may contain incorporated hydrogen. The mask can be applied, patterned and removed through dry processing techniques.

Abstract: A waveguide optical device having a guide member for propagation of light in a longitudinal direction. The guide member has upper and lower boundaries. A mass of birefringent material is disposed proximal to the guide member. The birefringent material has molecular dipoles subject to alignment by an imposed electrical field. The birefringent mass is overlapped by the optical field of the propagated light. An upper electrode is disposed in spaced relation to the birefringent mass. A lower electrode is disposed in spaced relation to the guide member. The electrodes have the capability of imposing an alternating current voltage across the birefringent mass to rotate the molecular dipoles of the birefringent mass in a plane defined by the normal to the guide member and the propagation vector of the light.

Abstract: The present invention provides a method of annealing optical glass layers, said method comprising the step of heating glass layers having an area greater than 0.01 cm.sup.2 to a temperature of between about 350 deg. C. and 1000 deg. C. in less than 10 minutes. The upper limit of the glass area that can be treated is limited only by the size of the quartz chamber. Current state-of-the-art chambers can accomodate glass areas of about 0.01 cm.sup.2 to about 324 cm.sup.2. According to another aspect of the invention, there is also provided an optical waveguide glass layer, treated according to the method of this invention, disposed on an integrated optical device.

Abstract: A method is described for forming patterns in deposited overlayers on GaAs and for aligning the formed patterns with etch features produced through dry processing. The deposited overlayers on GaAs are protected during pattern formation and subsequent processing by a durable, process integrable mask of hydrogenated amorphous carbon.

Abstract: A quasi-phase matching optical waveguide for producing a second harmonic of an internally propagated polarized laser beam having a wavelength in the range of from 700 to 1300 nm is disclosed. The waveguide is comprised of at least one array of laterally spaced transparent electrodes in direct contact with a transmission medium containing similarly polar aligned organic molecular dipoles in overlying areas. The transparent electrodes and overlying areas of the transmission medium are each of the same width and spacing.

Abstract: Apparatus adapted for use in high vacuum, thin-film deposition system for controlling the temperature of moving substrate holder. Preferably, such temperature control apparatus comprises a fixed, temperature-controlled, thermally conductive member, and liquid heat transfer medium (preferably liquid gallium) for thermally coupling such member to the substrate holder as it moves through a vacuum chamber.

Abstract: Method and apparatus for monitoring the deposition of a material or materials upon a substrate using atomic absorption techniques. Radiant energy is directed through a flow of evaporant during a deposition process. The radiation contains spectral emission lines absorbable by the evaporant as well as emission lines not absorbable by the evaporant. Changes in the transmission of one or more non-absorbable lines are used to compensate for changes in the absorption of absorbable lines of interest that are caused by misalignment or displacement of the optical elements during the deposition process.