Patents by Inventor Erich Schlecht

Erich Schlecht has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080315181
    Abstract: Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than ?15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (?) Hz.
    Type: Application
    Filed: February 25, 2008
    Publication date: December 25, 2008
    Inventors: Harish Manohara, Brian Hunt, Erich Schlecht, Peter Siegel, Eric Wong
  • Publication number: 20070133083
    Abstract: An waveguide apparatus and associated method are provided. Included is a waveguide and an integrated circuit positioned, at least in part, in the waveguide. The integrated circuit includes an amplifier and at least one transition between the amplifier and the waveguide.
    Type: Application
    Filed: December 5, 2006
    Publication date: June 14, 2007
    Inventors: Pekka Kangaslahti, Erich Schlecht, Lorene Samoska
  • Publication number: 20060261433
    Abstract: Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than ?15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (?) Hz.
    Type: Application
    Filed: May 23, 2006
    Publication date: November 23, 2006
    Inventors: Harish Manohara, Brian Hunt, Erich Schlecht, Peter Siegel, Eric Wong