Abstract: A method for the controlled aging of a photoresist which provides an aged photoresist that has a targeted photospeed which is faster than a conventional unaged photoresist is provided. Specifically, the inventive method includes the step of aging a solution containing at least a photoresist resin composition at a temperature below the thermal decomposition of the photoresist resin composition, but not below 20° C., for a time period that is effective in achieving a targeted photospeed which is faster than a photospeed of an unaged photoresist.

Abstract: A method for the controlled aging of a photoresist which provides an aged photoresist that has a targeted photospeed which is faster than a conventional unaged photoresist is provided. Specifically, the inventive method includes the step of aging a solution containing at least a photoresist resin composition at a temperature below the thermal decomposition of the photoresist resin composition, but not below 20° C., for a time period that is effective in achieving a targeted photospeed which is faster than a photospeed of an unaged photoresist.

Abstract: A method of fabricating an attenuating phase shift photolithographic mask which will reduce the formation of side-lobes adjacent to large structures in the kerf regions on the patterned wafer. These structures are typically much larger in size than device nominal, and this method may be applied to either one axis or both axes of the kerf structure depending on it's susceptibility to form side-lobes. A substantially defect free optical lithography mask having partially transmissive attenuating phase-shift regions, transmissive clear regions, and more opaque than partially transmissive regions is fabricated by first depositing an attenuating phase-shifting layer on the top surface of a transmissive substrate followed by deposition of a more opaque than partially transmissive layer on top of the partially transmissive attenuating phase-shifting layer. Next an image transfer layer is deposited on top of the more opaque than partially transmissive layer.

Abstract: Microbridge formation in chemically amplified negative tone photoresists based on poly(hydroxystyrene) (PHS) is avoided when the PHS is blended together with a co-polymer of PHS and an acrylic polymer such as poly(methyl methacrylate) (PMMA). The blend should include at least 10% by weight of the co-polymer. In operation, hydrogen bonding between the hydroxystyrene sub-units and the methacrylate sub-units decreases the availability of sites for crosslinking, and this reduction in crosslinking sites makes the blend less susceptible to formation of polymer resist microbridges. The invention is practicable with a polymers having a wide range of molecular weights (2000-50000 daltons), and development can be achieved using the industry standard 2.38 wt % trimethylammonium hydroxide (TMAH) developer without any adverse impact on the photoresist.