Abstract: A stacked device including a first substrate that includes a quantum information processing device, a second substrate bonded to the first substrate, and multiple bump bonds and at least one pillar between the first substrate and the second substrate. Each bump bond of the multiple bump bonds provides an electrical connection between the first substrate and the second substrate. At least one pillar defines a separation distance between a first surface of the first substrate and a first surface of the second substrate. A cross-sectional area of each pillar is greater than a cross-sectional area of each bump bond of the multiple bump bonds, where the cross-sectional area of each pillar and of each bump bond is defined along a plane parallel to the first surface of the first substrate or to the first surface of the second substrate.

Abstract: A stacked device including a first substrate that includes a quantum information processing device, a second substrate bonded to the first substrate, and multiple bump bonds and at least one pillar between the first substrate and the second substrate. Each bump bond of the multiple bump bonds provides an electrical connection between the first substrate and the second substrate. At least one pillar defines a separation distance between a first surface of the first substrate and a first surface of the second substrate. A cross-sectional area of each pillar is greater than a cross-sectional area of each bump bond of the multiple bump bonds, where the cross-sectional area of each pillar and of each bump bond is defined along a plane parallel to the first surface of the first substrate or to the first surface of the second substrate.

Abstract: A stacked device including a first substrate that includes a quantum information processing device, a second substrate bonded to the first substrate, and multiple bump bonds and at least one pillar between the first substrate and the second substrate. Each bump bond of the multiple bump bonds provides an electrical connection between the first substrate and the second substrate. At least one pillar defines a separation distance between a first surface of the first substrate and a first surface of the second substrate. A cross-sectional area of each pillar is greater than a cross-sectional area of each bump bond of the multiple bump bonds, where the cross-sectional area of each pillar and of each bump bond is defined along a plane parallel to the first surface of the first substrate or to the first surface of the second substrate.

Abstract: A printed circuit board includes: multiple electrically insulating laminate sheets laminated together in a stack; a first electrically conductive layer formed from a superconductor material arranged on a first exterior surface of the stack, the first electrically conductive layer including a signal line and a ground plane; a second electrically conductive layer formed from a superconductor material arranged on a second exterior surface of the stack, the second exterior surface opposing the first exterior surface; a third conductive trace between a first electrically insulating laminate sheet of the stack and a directly adjacent second electrically insulating laminate sheet of the stack; a first via extending through from the signal line through the stack to the third conductive trace, in which the signal line is electrically connected to the third conductive trace through the via.

Abstract: A device includes a first chip having a first circuit element, a first interconnect pad in electrical contact with the first circuit element, and a barrier layer on the first interconnect pad, a superconducting bump bond on the barrier layer, and a second chip joined to the first chip by the superconducting bump bond, the second chip having a first quantum circuit element, in which the superconducting bump bond provides an electrical connection between the first circuit element and the first quantum circuit element.

Abstract: A device includes a first chip having a first circuit element, a first interconnect pad in electrical contact with the first circuit element, and a barrier layer on the first interconnect pad, a superconducting bump bond on the barrier layer, and a second chip joined to the first chip by the superconducting bump bond, the second chip having a first quantum circuit element, in which the superconducting bump bond provides an electrical connection between the first circuit element and the first quantum circuit element.

Abstract: A stacked device including a first substrate that includes a quantum information processing device, a second substrate bonded to the first substrate, and multiple bump bonds and at least one pillar between the first substrate and the second substrate. Each bump bond of the multiple bump bonds provides an electrical connection between the first substrate and the second substrate. At least one pillar defines a separation distance between a first surface of the first substrate and a first surface of the second substrate. A cross-sectional area of each pillar is greater than a cross-sectional area of each bump bond of the multiple bump bonds, where the cross-sectional area of each pillar and of each bump bond is defined along a plane parallel to the first surface of the first substrate or to the first surface of the second substrate.

Abstract: A device includes a first chip having a first circuit element, a first interconnect pad in electrical contact with the first circuit element, and a barrier layer on the first interconnect pad, a superconducting bump bond on the barrier layer, and a second chip joined to the first chip by the superconducting bump bond, the second chip having a first quantum circuit element, in which the superconducting bump bond provides an electrical connection between the first circuit element and the first quantum circuit element.

Abstract: A device includes a first chip having a first circuit element, a first interconnect pad in electrical contact with the first circuit element, and a barrier layer on the first interconnect pad, a superconducting bump bond on the barrier layer, and a second chip joined to the first chip by the superconducting bump bond, the second chip having a first quantum circuit element, in which the superconducting bump bond provides an electrical connection between the first circuit element and the first quantum circuit element.

Abstract: A device (100) includes a first chip (104) having a first circuit element (112), a first interconnect pad (116) in electrical contact (118) with the first circuit element, and a barrier layer (120) on the first interconnect pad, a superconducting bump bond (106) on the barrier layer, and a second chip (102) joined to the first chip by the superconducting bump bond, the second chip having a quantum circuit element (108), in which the superconducting bump bond provides an electrical connection between the first circuit element and the quantum circuit element.

Abstract: A device (100) includes a first chip (104) having a first circuit element (112), a first interconnect pad (116) in electrical contact (118) with the first circuit element, and a barrier layer (120) on the first interconnect pad, a superconducting bump bond (106) on the barrier layer, and a second chip (102) joined to the first chip by the superconducting bump bond, the second chip having a quantum circuit element (108), in which the superconducting bump bond provides an electrical connection between the first circuit element and the quantum circuit element.

Abstract: A printed circuit board includes: multiple electrically insulating laminate sheets laminated together in a stack; a first electrically conductive layer formed from a superconductor material arranged on a first exterior surface of the stack, the first electrically conductive layer including a signal line and a ground plane; a second electrically conductive layer formed from a superconductor material arranged on a second exterior surface of the stack, the second exterior surface opposing the first exterior surface; a third conductive trace between a first electrically insulating laminate sheet of the stack and a directly adjacent second electrically insulating laminate sheet of the stack; a first via extending through from the signal line through the stack to the third conductive trace, in which the signal line is electrically connected to the third conductive trace through the via.

Abstract: A device (100) includes a first chip (104) having a first circuit element (112), a first interconnect pad (116) in electrical contact (118) with the first circuit element, and a barrier layer (120) on the first interconnect pad, a superconducting bump bond (106) on the barrier layer, and a second chip (102) joined to the first chip by the superconducting bump bond, the second chip having a quantum circuit element (108), in which the superconducting bump bond provides an electrical connection between the first circuit element and the quantum circuit element.