Patents by Inventor Erik Maria van Bussel

Erik Maria van Bussel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • 2T and flash memory array
    Patent number: 8958248
    Abstract: Flash memory arrays are described. In one embodiment, a flash memory array includes memory sectors of Two-Transistor (2T) AND memory cells. Within each of the memory sectors, a row of sector selection transistors is configured such that writing data onto a memory column within the memory sector is controlled by applying a voltage to a bit line, independent from the row of sector selection transistors. Other embodiments are also described.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: February 17, 2015
    Assignee: NXP B.V.
    Inventors: Michiel Jos van Duuren, Maurits Mario Nicolaas Storms, Erik Maria van Bussel
  • Phase change memory (PCM) architecture and a method for writing into PCM architecture
    Patent number: 8885399
    Abstract: A phase change memory (PCM) architecture and a method for writing a PCM architecture are described. In one embodiment, a PCM architecture includes a PCM array, word line driver circuits, bit line driver circuits, a source driver circuit and a voltage supply circuit. The bit line driver circuits are connected to the PCM array and the electrical ground. Other embodiments are also described.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: November 11, 2014
    Assignee: NXP B.V.
    Inventors: Maurits Mario Nicolaas Storms, Erik Maria van Bussel, Godefridus Adrianus Maria Hurkx, Michiel Jos van Duuren
  • 2T AND FLASH MEMORY ARRAY
    Publication number: 20140269075
    Abstract: Flash memory arrays are described. In one embodiment, a flash memory array includes memory sectors of Two-Transistor (2T) AND memory cells. Within each of the memory sectors, a row of sector selection transistors is configured such that writing data onto a memory column within the memory sector is controlled by applying a voltage to a bit line, independent from the row of sector selection transistors. Other embodiments are also described.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Applicant: NXP B.V.
    Inventors: Michiel Jos van Duuren, Maurits Mario Nicolaas Storms, Erik Maria van Bussel
  • PHASE CHANGE MEMORY (PCM) ARCHITECTURE AND A METHOD FOR WRITING INTO PCM ARCHITECTURE
    Publication number: 20120250401
    Abstract: A phase change memory (PCM) architecture and a method for writing a PCM architecture are described. In one embodiment, a PCM architecture includes a PCM array, word line driver circuits, bit line driver circuits, a source driver circuit and a voltage supply circuit. The bit line driver circuits are connected to the PCM array and the electrical ground. Other embodiments are also described.
    Type: Application
    Filed: March 29, 2011
    Publication date: October 4, 2012
    Applicant: NXP B.V.
    Inventors: Maurits Mario Nicolaas Storms, Erik Maria van Bussel, Godefridus Adrianus Maria Hurkx, Michiel Jos van Duuren