Abstract: The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si1?xGex compound material, said Hex-Si1?xGex compound material having a direct band gap for emitting light. The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S1?xGex compound material, said Hex-Si1?xGex compound material having a direct band gap for absorbing light.

Abstract: Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

Abstract: The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device (100) further comprises a set of nanowires (NW) electrically connecting a first terminal (172) of the electric device and the layer (107) of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer (107) of memory material to a second terminal (272) of the electric device. Each nanowire (NW) electrically contacts the layer (107) of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device (100) according to the invention.

Abstract: Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

Abstract: The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type, and the first conductivity type. One of the emitter or collector regions (1, 3) comprises a nanowire (30). The base region (2) has been formed from a layer (20) at the surface of the semiconductor body (12); the other one (3, 1) of the emitter or collector regions (1, 3) has been formed in the semiconductor body (12) below the base region (2). The emitter or collector region (1, 3) comprising the nanowire (30) has been provided on the surface of the semiconductor body (12) such that its longitudinal axis extends perpendicularly to the surface.

Abstract: The method of fabricating semiconducting nanowires having a desired wire diameter includes providing pre-fabricated semiconducting nanowires, at least one pre-fabricated nanowire having a wire diameter larger than the desired wire diameter (d); and reducing the wire diameter of the at least one pre-fabricated nanowire by etching. The etching is induced by light which is absorbed by the at least one pre-fabricated nanowire. The spectrum of the light is chosen such that the absorption of the at least one pre-fabricated nanowire is significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter.

Abstract: The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa-shaped semiconductor region (2) is formed, a masking layer (3) is deposited over the mesa-shaped semiconductor region (2), a part (3A) of the masking layer (3) is removed that borders a side surface of the mesa-shaped semiconductor region (2) near its top and an electrically conducting connection region (4) is formed on the resulting structure forming a contact for the mesa-shaped semiconductor region (2). According to the invention after removal of said part (3A) of the masking layer (3) but before formation of the electrically conducting connection region (4) the mesa-shaped semiconductor region (2) is widened by an additional semiconductor region (5) at the side surface of the mesa-shaped semiconductor region (2) freed by removal of said part (3A) of the masking layer (3).

Abstract: A semiconductor device is provided in which energy band gap can be electrically varied. The device includes nanowires embedded in a material that exhibits a deformation when properly addressed, e.g., a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (A1N) or zinc oxide (Zn0). The nanowires can be reversibly strained by applying a local deformation to the piezoelectric material by applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g., a LED or a laser. Further, contact resistance in semiconductor junctions can be controlled, e.g., for use in memories and switches.

Abstract: The method according to the invention is directed to manufacturing an electric device (100) according to the invention, having a body (102) with a resistor comprising a phase change material being changeable between a first phase and a second phase, the resistor having a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance different from the first electrical resistance when the phase change material is in the second phase. The resistor is a nanowire (NW) electrically connecting a first conductor (172, 120) and a second conductor (108, 121). The method comprises the step of providing a body (102) having the first conductor (172, 120), providing the first conductor (172, 120) with the nanowire (NW) thereby electrically connecting the nanowire (NW) and the first conductor (172, 120), and providing the nanowire (NW) with the second conductor (108, 121) thereby electrically connecting the nanowire (NW) and the second conductor (108, 121).

Abstract: A method of manufacturing an electric device including providing a body with a resistor of a phase change material being changeable between a first phase and a second phase, the resistor having a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance different from the first electrical resistance when the phase change material is in the second phase. The method further includes connecting the resistor between first and second conductors.

Abstract: The invention relates to a semiconductor sensor device (10) for sensing a substance comprising at least one nanowire (11) which is formed on a surface of a semiconductor body (12) and which is connected at a first end to a first electrically conducting connection region (13) and at a second end to’ a second electrically conducting connection region (14) while a fluid (20) comprising a substance (30) to be sensed can flow along the nanowire (11) and the substance (30) to be sensed can influence’ the electrical properties of the nanowire (11), wherein the nanowire (11) comprises viewed in a longitudinal direction subsequently a first semiconductor subregion (1) comprising a first semiconductor material and a second semiconductor subregion (2) comprising a second semiconductor material different from the first semiconductor material. According to the invention’ the first semiconductor material comprises a IV element material and the second semiconductor material comprises a III-V compound.

Abstract: A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light radiation. The structure is operable to emit light radiation in response to a current flow therethrough. Moreover, the elongated structure is fabricated to be sufficiently narrow for quantum confinement of charge carriers associated with the current flow to occur therein. Furthermore, the structure further includes an electrode arrangement for applying an electric field to the elongated structure for causing bending of its bandgap characteristic for modulating a wavelength of the light radiation emitted in operation from the structure in response to the current flow therethrough.

Abstract: The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first electrically conducting connection region (2) and at a second end to a second electrically conducting connection region (3) while a gas or a liquid comprising a substance to be sensed can flow between the mesa-shaped semiconductor regions (1) and the substance to be sensed can influence the electrical properties of the plurality of the mesa-shaped semiconductor regions (1), wherein at the surface of the semiconductor body (11) the first connection region (2) is formed and connected thereto with the first end the plurality of mesa-shaped semiconductor regions (1) is formed, and subsequently the second connection region (3) is formed connected to the plurality of mesa-shaped semiconductor regions (1) at their second

Abstract: The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type, and the first conductivity type. One of the emitter or collector regions (1, 3) comprises a nanowire (30). The base region (2) has been formed from a layer (20) at the surface of the semiconductor body (12); the other one (3, 1) of the emitter or collector regions (1, 3) has been formed in the semiconductor body (12) below the base region (2). The emitter or collector region (1, 3) comprising the nanowire (30) has been provided on the surface of the semiconductor body (12) such that its longitudinal axis extends perpendicularly to the surface.

Abstract: The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device (100) further comprises a set of nanowires (NW) electrically connecting a first terminal (172) of the electric device and the layer (107) of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer (107) of memory material to a second terminal (272) of the electric device. Each nanowire (NW) electrically contacts the layer (107) of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device (100) according to the invention.

Abstract: The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

Abstract: The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

Abstract: The present invention relates to a semiconductor device in which energy band gap can be electrically varied. An idea of the present invention is to provide a device, which is based on nanowires (306) embedded in a material (307) that exhibits a deformation when properly addressed, e.g. a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (AIN) or zinc oxide (ZnO). The nanowires (306) can be reversibly strained by applying a local deformation to the piezoelectric material (307) by means of applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g. a LED or a laser. This is a consequence of the fact that the band gap is proportional to the frequency of the emitted light. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

Abstract: The invention provides a luminescent particle (10) and a method of detecting a biological entity using a luminescent particle, the luminescent particle comprising a core area (20) and a shell area (30), the core area (20) being covered by the shell area (30), the core area (20) conferring a luminescent behavior on the luminescent particle (10) for at least one excitation wavelength and for at least one emission wavelength by means of a nanocrystal material (21), and the shell area (30) being provided such that it realizes an antireflective coating (31) of the core area (20).

Abstract: A semiconductor device with a heterojunction. The device comprises a substrate and at least one nanostructure. The substrate and nanostructure is of different materials. The substrate may e.g. be of a group IV semiconductor material, whereas the nanostructure may be of a group III-V semiconductor material. The nanostructure is supported by and in epitaxial relationship with the substrate. A nanostructure may be the functional component of an electronic device such as a gate-around-transistor device. In an embodiment of a gate-around-transistor, a nanowire (51) is supported by a substrate (50), the substrate being the drain, the nanowire the current channel and a top metal contact (59) the source. A thin gate dielectric (54) is separating the nanowire and the gate electrode (55A, 55B).