Abstract: Method for producing a photochromic material and a component including the photochromic material, where the method comprises the steps of:-first the formation on a substrate of a layer of an essentially oxygen free metal hydride with a predetermined thickness using a physical vapor deposition process; and -second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, resulting in a material with photochromic properties.

Abstract: The present invention relates to a metal hydride device having a variable transparency, comprising a substrate, at least one layer including a photochromic yttrium hydride having a chosen band gap, and a capping layer at least partially positioned on the opposite side of the photochromic yttrium hydride layer from the substrate, said capping layer being essentially impermeable to hydrogen and oxygen.

Abstract: A relevant technological challenge is the low cost and abundant materials development for silicon surface passivation for applications in optoelectronic devices, in particular in solar cells by scalable industrial methods. In the present invention, a new hybrid material comprising PEDOT:PSS and transparent conducting oxide nanostructures is developed and a method is proposed to fabricate the composite material that passivates well the silicon surface to be used by means of a thin composite film of thickness below 200 nm.

Abstract: A relevant technological challenge is the low cost and abundant materials development for silicon surface passivation for applications in optoelectronic devices, in particular in solar cells by scalable industrial methods. In the present invention, a new hybrid material comprising PEDOT:PSS and transparent conducting oxide nanostructures is developed and a method is proposed to fabricate the composite material that passivates well the silicon surface to be used by means of a thin composite film of thickness below 200 nm.

Abstract: Method for producing a photochromic material and a component including the photochromic material, where the method comprises the steps of:—first the formation on a substrate of a layer of an essentially oxygen free metal hydride with a predetermined thickness using a physical vapor deposition process; and—second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, resulting in a material with photochromic properties.

Abstract: The present invention relates to a metal hydride device having a variable transparency, comprising a substrate, at least one layer including a photochromic yttrium hydride having a chosen band gap, and a capping layer at least partially positioned on the opposite side of the photochromic yttrium hydride layer from the substrate, said capping layer being essentially impermeable to hydrogen and oxygen.

Abstract: A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N2O and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N2O to SiH4 below 2.

Abstract: A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N2O and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N2O to SiH4 below 2.

Abstract: A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N2O and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N2O to SiH4 below 2.

Abstract: A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N20 and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N20 to SiH4 below 2.