Abstract: The present invention concerns a method of growing a cerium-doped SrS phosphor layer by the Atomic Layer Epitaxy-method. According to the invention an organometallic cerium compound containing at least one cyclopentadienyl type ligand is used as a precursor for the dopant cerium. The cyclopentadienyl type cerium compounds can be used as ALE precursors at about 400° C. substrate temperatures without any observable thermal decomposition during processing.

Abstract: The present publication discloses a method for fabricating a multilayer alkaline-earth sulfide-metal oxide structure particularly suited for use in electroluminescent components. According to the method, a multilayer structure comprising at least one phosphor layer and at least one dielectric layer is formed onto a suitable substrate. The phosphor layer comprises at least one alkaline-earth sulfide and the dielectric layer at least one metal oxide. At least one of the dielectric layers is deposited by means of surface reactions directly onto the alkaline-earth sulfide layer(s). The invention is based on depositing the metal oxide dielectric layer by using as the precursor a organometal complex not involving compounds which could react in a deleterious manner with the alkaline-earth sulfide layer. This approach results in an EL component structure of longer life than those of the prior art.