Patents by Inventor Ernest R. Helfrich

Ernest R. Helfrich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stable N-channel MOS structure
    Patent number: 4212100
    Abstract: An N-channel MOS integrated circuit device having a composite metal gate structure which has improved temperature stability. The gate structure uses a polysilicon layer to separate the conventional metal gate from the conventional underlying gate oxide. The metal gate and the polysilicon layer extend laterally at least to the lateral extent of the gate region. This composite metal gate structure improves the temperature stability of the IC, and may be used, for example, in read-only memory (ROM) applications. The polysilicon layer is formed without additional photolithographic steps.
    Type: Grant
    Filed: September 23, 1977
    Date of Patent: July 15, 1980
    Assignee: MOS Technology, Inc.
    Inventors: John Paivinen, Walter D. Eisenhower, Jr., Ernest R. Helfrich