Abstract: A method for forming a doped silicon layer or a silicon alloy includes providing a silicon substrate having a silicon surface. An eutectic-former layer with dopant is formed on the silicon surface. Heating is conducted past a system eutectic temperature of the eutectic-former layer and silicon to form a liquid eutectic melt that incorporates some of the silicon near-surface into the liquid eutectic melt. Cooling to supersaturate the liquid eutectic melt with silicon and recrystallize silicon doped with the dopant. A silicon solar cell includes an emitter layer within a silicon substrate. A p-n junction is defined by a junction of the emitter layer with the remaining silicon substrate. The emitter has a doping profile with a doping concentration at the p-n junction that is equal or greater than the doping concentration at a surface of the emitter layer.

Abstract: A garbage bag has a bag having an open top area. A plurality of ring members is formed in an interior of the bag.