Abstract: A communication device reduces intermodulation interference in a simultaneous transmitter using a notch diplexing arrangement. The communication device has a radio front-end module with more than one transceiver for simultaneous transmission with opposing transmit (Tx) band notch filters in series with each duplexer output, and phase rotations into and out of the notch filters suitable for diplexing at the notch filter outputs.

Abstract: A communication device reduces intermodulation interference in a simultaneous transmitter using a notch diplexing arrangement. The communication device has a radio front-end module with more than one transceiver for simultaneous transmission with opposing transmit (Tx) band notch filters in series with each duplexer output, and phase rotations into and out of the notch filters suitable for diplexing at the notch filter outputs.

Abstract: A method of fabricating semiconductor devices with a passivated surface includes providing first cap and etch stop layers and second cap and etch stop layers with a contact layer thereon so as to define an inter-electrode surface area. A first layer and an insulating layer, which are selectively etchable relative to each other, are deposited on the contact layer and the inter-electrode surface area. The insulating layer and the first layer are individually etched to define an electrode contact area and to expose the inter-electrode surface area. Portions of the first etch stop and cap layers remaining in the contact area are selectively removed and a metal contact is formed in the contact area in abutting engagement with the insulating layer so as to seal the inter-electrode surface area.

Abstract: A method of fabricating semiconductor devices with a passivated surface includes providing a contact layer on a substrate so as to define an inter-electrode surface area. A first layer and an insulating layer, which are selectively etchable relative to each other and to the substrate and the contact layer, are deposited on the contact layer and the inter-electrode surface area. The insulating layer and the first layer are individually and selectively etched to define an electrode contact area and to expose the inter-electrode surface area. The exposed inter-electrode surface area is passivated, either subsequent to or during the etching of the first layer. A metal contact is formed in the electrode contact area in abutting engagement with the insulating layer so as to seal the inter-electrode surface area.