Patents by Inventor Ernst Hebenstreit

Ernst Hebenstreit has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5060048
    Abstract: A discretely constructed MOSFET is switched by a voltage applied between gate terminal and source terminal. The source terminal has a self-inductance in which a fast change of the load current induces a considerable voltage which opposes the applied gate-source bias. This opposing voltage is reduced since the source contact is connected to an auxiliary terminal which is largely magnetically decoupled from the source terminal. A control voltage is applied between gate terminal and auxiliary terminal. When a plurality of MOSFETs are connected in parallel, oscillations in the control circuit can thus be effectively suppressed.
    Type: Grant
    Filed: May 4, 1990
    Date of Patent: October 22, 1991
    Assignee: Siemens Aktiengesellschaft & Semikron GmbH
    Inventors: Ernst Hebenstreit, Leo Lorenz, Winfried Schierz, Heinz Amann
  • Patent number: 4866556
    Abstract: In power switches, conductive coupling of the control signal inputs to the power switching stage, and to the load to be switched, can result in impairment of control function. Moveover these power switches known in the art, have the disadvantage that the drive circuit and power switching stage must lie at the same potential. An improved self protecting power switch includes a first drive unit and a second drive circuit that are connected together via a pulse transformer. The first drive unit generates successive pulse trains in response to a control signal. A second drive unit regenerates square wave signals for the control of the power switching stage.
    Type: Grant
    Filed: November 10, 1987
    Date of Patent: September 12, 1989
    Assignee: Siemens Aktiengesellschaft
    Inventor: Ernst Hebenstreit
  • Patent number: 4760293
    Abstract: Power MOSFETs for switching high voltages have a relatively high on-state DC resistance. The invention provides for the connection in series of a low voltage MOSFET with a higher voltage bipolar transistor. This series circuit is connected in parallel with a series circuit consisting of another MOSFET and a threshold switch. The threshold switch is placed between the base terminal and the free terminal of the low voltage MOSFET. The MOSFETs receive a joint control signal (u.sub.1) which is routed to the low voltage MOSFET. In the case of an inductive load with recovery operation, the signal is routed through a delay element that becomes active when the circuit is turned on.
    Type: Grant
    Filed: May 12, 1986
    Date of Patent: July 26, 1988
    Assignee: Siemens Aktiengesellschaft
    Inventor: Ernst Hebenstreit
  • Patent number: 4461966
    Abstract: Circuit for controlling at least one power-FET, including a transformer having a primary and a secondary winding, a control input connected to the primary winding, a first terminal of the secondary winding connected to the gate electrode of the FET, at least one diode connected between the first terminal of the secondary winding and the gate electrode of the FET, a second terminal of the secondary winding connected to the source of the FET, a differential member connected between the control input and the primary winding, and a switch connected between the secondary winding and the gate electrode of the FET, the switch connecting the gate electrode of the FET to the first terminal of the secondary winding in the case of a given secondary signal of a first polarity, and the switch connecting the gate electrode of the FET to the source electrode of the FET in the case of a given secondary signal of a second polarity.
    Type: Grant
    Filed: December 1, 1981
    Date of Patent: July 24, 1984
    Assignee: Siemens Aktiengesellschaft
    Inventor: Ernst Hebenstreit
  • Patent number: 4430586
    Abstract: A switch includes an MIS-FET having a source and a control electrode defining a gate-source capacitance and being operated as a source follower for switching a given voltage, a first capacitor, a first auxiliary transistor and a second auxiliary transistor cutting off the first transistor when switched into a conducting state. The transistors each have a base, a collector and an emitter electrode defining a switching path. The collectors of each of the transistors are connected to the control electrode of the FET. A control input terminal is provided as well as second and third capacitors each being connected between the control input terminal and the base of a respective one of the transistors. The emitter electrode of the second transistor is connected to the source electrode of the FET.
    Type: Grant
    Filed: May 11, 1981
    Date of Patent: February 7, 1984
    Assignee: Siemens Aktiengesellschaft
    Inventor: Ernst Hebenstreit
  • Patent number: 4302685
    Abstract: A linear output stage for charge-coupled circuits is disclosed. Charge-coupled circuits (CCDs) are of significance in the processing of analogue signals as they can be used as analogue shift registers. Conventional output circuits of CCDs are constructed with source followers. The non-linear characteristic of an MOS source follower which is provided with an external load resistor is substantially linearized by means of a highly ohmic source resistor. A fundamental disadvantage of these output circuits is that the evaluation of the signal is mainly carried out by means of a space charge capacitance which is voltage-dependent since it is dependent upon space charge depth. In the output stage disclosed, the signal charge is mainly absorbed by means of a constant oxide capacitance of the evaluator electrode. The electrode receives the charge not in floating fashion but rather at a fixed potential.
    Type: Grant
    Filed: September 6, 1979
    Date of Patent: November 24, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventor: Ernst Hebenstreit
  • Patent number: 4281296
    Abstract: An electrical filter circuit comprising charge transfer devices formed as lines consisting of individual CTD elements formed as four-terminal resonators formed as closed looped circuits and which determine the frequency-dependent transmission behavior of the filter circuit and wherein the four-terminal resonators are interconnected by way of a coupling circuit. In the invention, the filter circuit functions as a separating and shunt circuit and can be formed as an integrated circuit with two end resonators designed as self-contained closed looped circuits.
    Type: Grant
    Filed: July 24, 1979
    Date of Patent: July 28, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hermann Betzl, Ernst Hebenstreit, Roland Schreiber
  • Patent number: 4281297
    Abstract: A filter circuit utilizing charge transfer delay lines having individual CTD elements utilizing four-terminal resonators each of which is designated as a self-contained closed looped circuit and which determine the frequency dependent transmission characteristics of the filter circuit and wherein successive four-terminal resonators are interconnected by way of a coupling circuit. The invention utilizes the coupling circuit mounted between adjacent four-terminal resonators which are constructed simply as possible and utilizing integrated circuit techniques. Amplifiers are connected in parallel with the input and/or the output of the individual four-terminal resonators and the signal flow direction of the amplifiers corresponds to that of parallel connected CTD lines and the series lines of the coupling circuit and the amplifiers have unidirectional transmission characteristics and an inverting amplifier is contained in at least one of the series lines.
    Type: Grant
    Filed: July 24, 1979
    Date of Patent: July 28, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hermann Betzl, Ernst Hebenstreit, Roland Schreiber
  • Patent number: 4266205
    Abstract: A resonator circuit formed in MOS technology for scanned analog signals, wherein such circuits are constructed for use with accumulators and information processing is accomplished by means of switched capacitors which are charged or respectively connected to each other by way of clock pulse transistors. In the present invention, the realization of general ladder networks or branching circuits for builders in single layer MOS techniques is accomplished by utilizing a second continuous branch which is switched to a first accumulator stage by clock pulse switches and is connected with a reference potential through a capacitor as well as to a further accumulator input through a series switch. The signal series arms are connected with the outputs of the total accumulator arrangement by way of time delay transit elements.
    Type: Grant
    Filed: June 25, 1979
    Date of Patent: May 5, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hermann Betzl, Ernst Hebenstreit, Roland Schreiber
  • Patent number: 4162539
    Abstract: A read-out circuit for digital storage elements wherein a bit line can be connected to a storage capacitor which is connected to the input of a first inverting amplifier stage and the output of the amplifying stage is connected to the input of a second inverting amplifier stage and wherein the first amplifier stage can be bridged by way of a first switch and the output of the second amplifier stage can be connected to the input of the first amplifier by way of a second switch and wherein the input of the first amplifier stage and the output of the second amplifier stage are connected together by way of a capacitor.
    Type: Grant
    Filed: July 3, 1978
    Date of Patent: July 24, 1979
    Assignee: Siemens Aktiengesellschaft
    Inventor: Ernst Hebenstreit
  • Patent number: 3974366
    Abstract: An integrated, programmable logic arrangement includes an AND matrix and an OR matrix which have individual gates. In the AND matrix each input is connected to a control line and via an inverter to another control line for production of a complementary input signal. A selector line and a base line are provided for each gate both in the AND matrix and in the OR matrix and the selector line is connectible to the supply potential. In the AND matrix, in programmed fashion, a switching transistor is provided at the intersection points between a control line and a selector line, or is not so provided, and a switching transistor so arranged at an intersection is connected by its gate terminal to an associated control line, Also, the switching transistor is connected, on the one hand, to an associated selector line of a gate and, on the other hand, to a base line which is connectible to another potential. The difference between the supply potential and the other potential corresponds to the supply voltage.
    Type: Grant
    Filed: September 29, 1975
    Date of Patent: August 10, 1976
    Assignee: Siemens Aktiengesellschaft
    Inventor: Ernst Hebenstreit