Abstract: In the manufacture of semi-custom integrated circuits silicon wafers with P and N or N and P structures are used, and interconnections to establish a specific application must be created. Unlike currently known technologies, electrically conductive film with standardized openings made according to a pre-arranged raster must be deposited on the silicon wafer. Subsequently the conductive film, will be removed from between the openings directly or indirectly by means of electromagnetic radiation in order to produce the required circuit configuration. A laser beam is particularly appropriate for this since it can be positioned and controlled, and can be used directly for the exposure of a photosensitive film. The creation of insular conductive film is then achieved through a photo- etch technique. By use of this process, an expensive customer specific photo mask can be avoided.

Abstract: During the manufacture of semi-custom monolithic integrated circuits or semiconductor devices silicon wafers with P-type or N-type impurity regions are used and interconnections must be produced for specific applications. Unlike currently known technologies, an electrically conductive film containing standardized openings in a pre-arranged raster is deposited on the silicon wafer. Subsequently, the conductive film is removed between preselected openings directly or indirectly by means of electromagnetic radiation in order to produce the required circuit configuration. A laser beam is particularly appropriate therefor because such beam can be positioned and controlled and can be used directly for the exposure of a photosensitive film. The production of isolated conductive areas in the conductive film is then accomplished by photo-etching. The use of an expensive customer specific photomask can thus be avoided.