Abstract: Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process.

Abstract: Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process.

Abstract: A thermoelectric device with improved efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement and a second thermoelement electrically coupled to the first thermoelement. An array of first tips are in close physical proximity to, but not necessarily in physical contact with, the first thermoelement at a first set of discrete points. An array of second tips are in close physical proximity to, but not necessarily in physical contact with, the second thermoelement at a second set of discrete points. The first and second conical are constructed entirely from metal, thus reducing parasitic resistances.

Abstract: A thermoelectric device with improved efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement and a second thermoelement electrically coupled to the first thermoelement. An array of first tips are in close physical proximity to, but not necessarily in physical contact with, the first thermoelement at a first set of discrete points. An array of second tips are in close physical proximity to, but not necessarily in physical contact with, the second thermoelement at a second set of discrete points. The first and second conical are constructed entirely from metal, thus reducing parasitic resistances.

Abstract: Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process.

Abstract: A thermoelectric device with improved efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement and a second thermoelement electrically coupled to the first thermoelement. An array of first tips are in close physical proximity to, but not necessarily in physical contact with, the first thermoelement at a first set of discrete points. An array of second tips are in close physical proximity to, but not necessarily in physical contact with, the second thermoelement at a second set of discrete points. The first and second conical are constructed entirely from metal, thus reducing parasitic resistances.

Abstract: Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process.

Abstract: A thermoelectric device with improved efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement and a second thermoelement electrically coupled to the first thermoelement. An array of first tips are in close physical proximity to, but not necessarily in physical contact with, the first thermoelement at a first set of discrete points. An array of second tips are in close physical proximity to, but not necessarily in physical contact with, the second thermoelement at a second set of discrete points. The first and second conical are constructed entirely from metal, thus reducing parasitic resistances.