Abstract: The invention relates to a crucible for crystal growth and a method for releasing thermal stress of silicon carbide crystals. The crucible is a crucible in contact with the side surface of the prepared crystals, and the crucible has an annular non-closed splicing structure. The crucible for the crystal growth has the annular non-closed splicing structure, so that the crystals can be prevented from being hooped, hot stress concentrated in the crystals in the growth process of the crystals can be effectively released, the fracturing rate of the crystals can be reduced, and the finished product rate of the crystals can be increased.

Abstract: The invention relates to a crucible for crystal growth and a method for releasing thermal stress of silicon carbide crystals. The crucible is a crucible in contact with the side surface of the prepared crystals, and the crucible has an annular non-closed splicing structure. The crucible for the crystal growth has the annular non-closed splicing structure, so that the crystals can be prevented from being hooped, hot stress concentrated in the crystals in the growth process of the crystals can be effectively released, the fracturing rate of the crystals can be reduced, and the finished product rate of the crystals can be increased.

Abstract: A controllable splitting method comprises: electrically connecting a photoconductive switch between input and output ends of a current pulse; connecting a time domain signal of the input current pulse to an external triggering port of a pulse laser; emitting a laser pulse to irradiate the switch; when no current pulse is input, failing to receive an external triggering signal and not outputting the laser pulse, the switch being in an off state without the irradiation of the laser pulse, and no current being output; when the current pulse is input, triggering the pulse laser to synchronously output the laser pulse on a time domain, irradiating the switch so that the switch is in an on state and the current pulse is output; and forming, at the output end, a current pulse signal synchronous with a time domain of the input end and having a split waveform.

Abstract: A controllable splitting method comprises: electrically connecting a photoconductive switch between input and output ends of a current pulse; connecting a time domain signal of the input current pulse to an external triggering port of a pulse laser; emitting a laser pulse to irradiate the switch; when no current pulse is input, failing to receive an external triggering signal and not outputting the laser pulse, the switch being in an off state without the irradiation of the laser pulse, and no current being output; when the current pulse is input, triggering the pulse laser to synchronously output the laser pulse on a time domain, irradiating the switch so that the switch is in an on state and the current pulse is output; and forming, at the output end, a current pulse signal synchronous with a time domain of the input end and having a split waveform.

Abstract: A high temperature fixture, said fixture comprising: at least three noble metal electrodes arranged in parallel, among which two adjacent noble metal electrodes are used for clamping a test sample; noble metal wires connected to the noble metal electrodes at one end, and to a test device at the other end for transmitting test signals generated by the test sample to the test device through the noble metal electrodes; and a thermocouple for measuring the temperature of the test materials.

Abstract: A high temperature fixture, said fixture comprising: at least three noble metal electrodes, arranged in parallel, among which two adjacent noble metal electrodes are used for clamping a test sample; noble metal wires connected to the noble metal electrodes at one end, and to a test device at the other end for transmitting test signals generated by the test sample to the test device through the noble metal electrodes; and a thermocouple for measuring the temperature of the test materials.

Abstract: An apparatus with two-chamber structure for growing silicon carbide (SiC) crystals is disclosed. The apparatus comprises a sample feed chamber and a crystal growth chamber, both of which are separately connected with each other by a vacuum baffle valve and connected with a vacuum system. The crystal growth apparatus ensures that the insulation materials in the crystal growth chamber cannot contact with air, minimizes the adsorption of nitrogen and pollutants on the insulation materials and the growth chamber, improves purity of SiC crystals and achieves precise control of the impurities so that growth of high-quality SiC crystals such as conductive, doped semi-insulating or high-purity semi-insulating SiC crystals and the like is enabled.

Abstract: An apparatus with two-chamber structure for growing silicon carbide (SiC) crystals is disclosed. The apparatus comprises a sample feed chamber and a crystal growth chamber, both of which are separately connected with each other by a vacuum baffle valve and connected with a vacuum system. The crystal growth apparatus ensures that the insulation materials in the crystal growth chamber cannot contact with air, minimizes the adsorption of nitrogen and pollutants on the insulation materials and the growth chamber, improves purity of SiC crystals and achieves precise control of the impurities so that growth of high-quality SiC crystals such as conductive, doped semi-insulating or high-purity semi-insulating SiC crystals and the like is enabled.