Patents by Inventor Er Wei WANG

Er Wei WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Step coverage improvement for memory channel layer in 3D NAND memory
    Patent number: 10707221
    Abstract: Embodiments of an etching method for a material layer of a NAND memory device are disclosed. An example method of chemically etching a material layer on one or more substrates includes mixing an etchant solution within a bath and allowing the etchant solution to reach a quiescent state. After the etchant solution has reached the quiescent state, the method includes loading the one or more substrates into the bath. The one or more substrates includes a plurality of openings having the material layer disposed on an inside surface of the plurality of openings. The method also includes allowing the one or more substrates to remain in the bath for a predetermined time period, such that a thickness of the material layer is reduced by the etchant solution.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: July 7, 2020
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Er Wei Wang, Yonggang Yang
  • STEP COVERAGE IMPROVEMENT FOR MEMORY CHANNEL LAYER IN 3D NAND MEMORY
    Publication number: 20200098772
    Abstract: Embodiments of an etching method for a material layer of a NAND memory device are disclosed. An example method of chemically etching a material layer on one or more substrates includes mixing an etchant solution within a bath and allowing the etchant solution to reach a quiescent state. After the etchant solution has reached the quiescent state, the method includes loading the one or more substrates into the bath. The one or more substrates includes a plurality of openings having the material layer disposed on an inside surface of the plurality of openings. The method also includes allowing the one or more substrates to remain in the bath for a predetermined time period, such that a thickness of the material layer is reduced by the etchant solution.
    Type: Application
    Filed: October 24, 2018
    Publication date: March 26, 2020
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Er Wei WANG, Yonggang YANG