Abstract: Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same The present invention provides monocrystalline semiconductor semi-finished product and substrates having a predetermined orientation of its crystal structure relative to a central axis and a at least partially curved lateral surface of the semi-finished product or substrate that reduces or even eliminates the occurrence of cracks during mechanical processing, and a method of producing such semiconductor semi-finished products and/or substrates.

Abstract: A method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes connecting a pair of reactors to a vacuum pump system by a common vacuum channel and creating and/or controlling, with the vacuum pump system, a common gas phase condition in the inner chambers of the pair of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a semiconductor single crystal.

Abstract: A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

Abstract: A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.

Abstract: The present invention provides monocrystalline 4H—SiC substrates having a specific orientation of its crystal structure which is set such as to reduce or even eliminate the occurrence of cracks or fissures during mechanical processing, and method of producing same. The monocrystalline 4H—SiC substrate, which has a longitudinal axis and an at least partially curved lateral surface parallel to said longitudinal axis, is characterized in that the crystal structure of the 4H—SiC substrate is oriented with respect to the longitudinal axis such that at each position on the lateral surface of the semi-finished product there is a line segment which is intersected by at least a predetermined minimum number of parallel cleavage planes of the {1010} form per unit length, wherein the line segment is defined by a plane tangent to the lateral surface at said position.

Abstract: The present invention provides monocrystalline 4H—SiC semi-finished products having a specific orientation of its crystal structure which is set such as to reduce or even eliminate the occurrence of cracks or fissures during mechanical processing, and method of producing same. The monocrystalline 4H—SiC semi-finished product, which has a longitudinal axis and an at least partially curved lateral surface parallel to said longitudinal axis, is characterized in that the crystal structure of the 4H—SiC semi-finished product is oriented with respect to the longitudinal axis such that at each position on the lateral surface of the semi-finished product there is a line segment which is intersected by at least a predetermined minimum number of parallel cleavage planes of the {1010} form per unit length, wherein the line segment is defined by a plane tangent to the lateral surface at said position.

Abstract: A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.

Abstract: A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

Abstract: The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

Abstract: The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.