Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.

Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.

Abstract: Methods and systems for performing single wavelength ellipsometry (SWE) measurements with reduced measurement spot size are presented herein. In one aspect, a pupil stop is located at or near a pupil plane in the collection optical path to reduce sensitivity to target edge diffraction effects. In another aspect, a field stop is located at or near an image plane conjugate to the wafer plane in the collection optical path to reduce sensitivity to undesired optical-structural interactions. In another aspect, a linear polarizer acting on the input beam of the SWE system includes a thin, nanoparticle based polarizer element. The nanoparticle based polarizer element improves illumination beam quality and reduces astigmatism on the wafer plane. The pupil and field stops filter out unwanted light rays before reaching the detector. As a result, measurement spot size is reduced and tool-to-tool matching performance for small measurement targets is greatly enhanced.