Patents by Inventor Etsuo Hamada

Etsuo Hamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10763112
    Abstract: According to one embodiment, a method for manufacturing a device includes a first process, a second process, a third process, and a fourth process. The first process includes providing a structure body at a first surface of a substrate. The substrate is light-transmissive and has a second surface. A light transmissivity of the structure body is lower than a light transmissivity of the substrate. The second process includes providing a negative-type photoresist at the second surface. The third process includes irradiating the substrate with light to expose a portion of the photoresist. The light is irradiated in a first direction from the first surface toward the second surface. The light passes through the substrate. The fourth process includes developing the photoresist to remain the portion of the photoresist in a state of being adhered to the second surface and to remove other portion of the photoresist.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: September 1, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Etsuo Hamada
  • Publication number: 20200027723
    Abstract: According to one embodiment, a method for manufacturing a device includes a first process, a second process, a third process, and a fourth process. The first process includes providing a structure body at a first surface of a substrate. The substrate is light-transmissive and has a second surface. A light transmissivity of the structure body is lower than a light transmissivity of the substrate. The second process includes providing a negative-type photoresist at the second surface. The third process includes irradiating the substrate with light to expose a portion of the photoresist. The light is irradiated in a first direction from the first surface toward the second surface. The light passes through the substrate. The fourth process includes developing the photoresist to remain the portion of the photoresist in a state of being adhered to the second surface and to remove other portion of the photoresist.
    Type: Application
    Filed: December 28, 2018
    Publication date: January 23, 2020
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Etsuo Hamada
  • Patent number: 9512331
    Abstract: The present invention provides a chromium-free surface treatment agent, comprising: a resin compound having a specific bisphenol skeleton; cationic urethane resin emulsion; silane coupling agent; an organic titanium chelate compound; a quadrivalent vanadyl compound; a molybdic acid compound; and water, wherein these components are blended at predetermined ratios such that pH value of the surface treatment agent is in the range of 4 to 5. The one-pack type chromium-free surface treatment agent of the present invention exhibits good stability during storage and is capable of forming on a metal material surface a coating film excellent in corrosion resistance at a bending-processed portion of a steel sheet, solvent resistance and paintability after alkali degreasing.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: December 6, 2016
    Assignee: JFE STEEL CORPORATION
    Inventors: Toru Imokawa, Nobue Fujibayashi, Takahiro Kubota, Etsuo Hamada, Masayasu Nagoshi
  • Patent number: 9200165
    Abstract: The present invention provides a chromium-free surface treatment liquid which enables forming, on a metal material surface, a film excellent in corrosion resistance at bent portions of a steel sheet, solvent resistance, coating properties after alkaline degreasing, and sweat resistance. The surface treatment liquid contains a resin compound having a specific bisphenol skeleton, a cationic urethane resin emulsion, a silane coupling agent, an organic titanium chelate compound, a quadrivalent vanadyl compound, a molybdate compound, a fluorine compound, and water at predetermined proportions. The pH of the surface treatment liquid is in the range of 4 to 5.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: December 1, 2015
    Assignee: JFE STEEL CORPORATION
    Inventors: Toru Imokawa, Takahiro Kubota, Etsuo Hamada, Masayasu Nagoshi
  • Patent number: 8900962
    Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a base region and an emitter region in a front surface of a semiconductor layer. The method can include forming a first impurity implantation region by implanting first impurity of a first conductivity type into a back surface of the semiconductor layer. The method can include selectively forming a second impurity implantation region by selectively implanting second impurity of a second conductivity type into the first impurity implantation region. In addition, the method can include irradiating the first impurity implantation region and the second impurity implantation region with laser light. A peak of impurity concentration profile in a depth direction of at least one of the first impurity implantation region and the second impurity implantation region before irradiation with the laser light is adjusted to a depth of 0.05 ?m or more and 0.
    Type: Grant
    Filed: March 21, 2011
    Date of Patent: December 2, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Daisuke Yamashita, Etsuo Hamada, Hideki Nozaki, Hironobu Shibata
  • Publication number: 20130249063
    Abstract: An aspect of the present embodiment, there is provided a shield plate configured to cover a semiconductor substrate including a semiconductor device in which a first semiconductor element and a second semiconductor element are included, in implanting charged particles into the semiconductor substrate to provide a lifetime control layer in the semiconductor substrate, including, an alignment mark configured to align with respect to a semiconductor substrate, a first region configured to cover the first semiconductor element, and a second region configured to cover the second semiconductor element, a thickness of the second region being thinner than a thickness of the first region.
    Type: Application
    Filed: March 5, 2013
    Publication date: September 26, 2013
    Inventors: Hironobu SHIBATA, Etsuo HAMADA
  • Publication number: 20130171468
    Abstract: The present invention provides a chromium-free surface treatment liquid which enables forming, on a metal material surface, a film excellent in corrosion resistance at bent portions of a steel sheet, solvent resistance, coating properties after alkaline degreasing, and sweat resistance. The surface treatment liquid contains a resin compound having a specific bisphenol skeleton, a cationic urethane resin emulsion, a silane coupling agent, an organic titanium chelate compound, a quadrivalent vanadyl compound, a molybdate compound, a fluorine compound, and water at predetermined proportions. The pH of the surface treatment liquid is in the range of 4 to 5.
    Type: Application
    Filed: September 20, 2011
    Publication date: July 4, 2013
    Applicant: JFE Steel Corporation
    Inventors: Toru Imokawa, Takahiro Kubota, Etsuo Hamada, Masayasu Nagoshi
  • Publication number: 20130084453
    Abstract: The present invention provides a chromium-free surface treatment agent, comprising: a resin compound having a specific bisphenol skeleton; cationic urethane resin emulsion; silane coupling agent; an organic titanium chelate compound; a quadrivalent vanadyl compound; a molybdic acid compound; and water, wherein these components are blended at predetermined ratios such that pH value of the surface treatment agent is in the range of 4 to 5. The one-pack type chromium-free surface treatment agent of the present invention exhibits good stability during storage and is capable of forming on a metal material surface a coating film excellent in corrosion resistance at a bending-processed portion of a steel sheet, solvent resistance and paintability after alkali degreasing.
    Type: Application
    Filed: February 25, 2011
    Publication date: April 4, 2013
    Applicant: JFE Steel Corporation
    Inventors: Toru Imokawa, Nobue Fujibayashi, Takahiro Kubota, Etsuo Hamada, Masayasu Nagoshi
  • Patent number: 8304092
    Abstract: An aqueous surface-treatment liquid is a treatment liquid containing a water-soluble zirconium compound, water-dispersive particulate silica, a silane coupling agent, a vanadic acid compound, a phosphoric acid compound, a nickel compound, and an acrylic resin emulsion in particular proportions. A surface-treated galvanized steel sheet produced using the treatment liquid is a galvanized steel sheet having a surface-treatment coating on a surface thereof, and the coating contains a zirconium compound, particulate silica, a silane-coupling-agent-derived component, a vanadic acid compound, a phosphoric acid compound, a nickel compound, and an acrylic resin in particular proportions. The amount of coating on a zirconium basis is 10 to 200 mg/m2. This surface-treated galvanized steel sheet is chromate-free and has superior flat-portion corrosion resistance, blackening resistance, and appearance and corrosion resistance after press forming.
    Type: Grant
    Filed: December 10, 2007
    Date of Patent: November 6, 2012
    Assignee: JFE Steel Corporation
    Inventors: Kazuhisa Okai, Rie Umebayashi, Etsuo Hamada, Akira Matsuzaki, Satoru Ando
  • Publication number: 20110250728
    Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a base region and an emitter region in a front surface of a semiconductor layer. The method can include forming a first impurity implantation region by implanting first impurity of a first conductivity type into a back surface of the semiconductor layer. The method can include selectively forming a second impurity implantation region by selectively implanting second impurity of a second conductivity type into the first impurity implantation region. In addition, the method can include irradiating the first impurity implantation region and the second impurity implantation region with laser light. A peak of impurity concentration profile in a depth direction of at least one of the first impurity implantation region and the second impurity implantation region before irradiation with the laser light is adjusted to a depth of 0.05 ?m or more and 0.
    Type: Application
    Filed: March 21, 2011
    Publication date: October 13, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Daisuke Yamashita, Etsuo Hamada, Hideki Nozaki, Hironobu Shibata
  • Patent number: 7875363
    Abstract: A surface-treated galvanized steel sheet includes a steel sheet, a zinc coating disposed on the steel sheet, and a film disposed on the zinc coating. The film has a thickness in the range of 0.01 to 3 ?m and contains certain amounts of resin compound having a particular chemical structure, cationic urethane resin, vanadium compound, zirconium compound, compound having a phosphate group, and acid compound. The surface-treated galvanized steel sheet contains no hexavalent chromium in the film and is excellent in terms of corrosion resistance, alkali resistance, and solvent resistance.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: January 25, 2011
    Assignee: JFE Steel Corporation
    Inventors: Kazuhisa Okai, Etsuo Hamada, Syuji Nomura
  • Publication number: 20100035055
    Abstract: An aqueous surface-treatment liquid is a treatment liquid containing a water-soluble zirconium compound, water-dispersive particulate silica, a silane coupling agent, a vanadic acid compound, a phosphoric acid compound, a nickel compound, and an acrylic resin emulsion in particular proportions. A surface-treated galvanized steel sheet produced using the treatment liquid is a galvanized steel sheet having a surface-treatment coating on a surface thereof, and the coating contains a zirconium compound, particulate silica, a silane-coupling-agent-derived component, a vanadic acid compound, a phosphoric acid compound, a nickel compound, and an acrylic resin in particular proportions. The amount of coating on a zirconium basis is 10 to 200 mg/m2. This surface-treated galvanized steel sheet is chromate-free and has superior flat-portion corrosion resistance, blackening resistance, and appearance and corrosion resistance after press forming.
    Type: Application
    Filed: December 10, 2007
    Publication date: February 11, 2010
    Inventors: Kazuhisa Okai, Rie Umebayashi, Etsuo Hamada, Akira Matsuzaki, Satoru Ando
  • Publication number: 20090274926
    Abstract: A surface-treated galvanized steel sheet includes a steel sheet, a zinc coating disposed on the steel sheet, and a film disposed on the zinc coating. The film has a thickness in the range of 0.01 to 3 ?m and contains certain amounts of resin compound having a particular chemical structure, cationic urethane resin, vanadium compound, zirconium compound, compound having a phosphate group, and acid compound. The surface-treated galvanized steel sheet contains no hexavalent chromium in the film and is excellent in terms of corrosion resistance, alkali resistance, and solvent resistance.
    Type: Application
    Filed: November 28, 2006
    Publication date: November 5, 2009
    Inventors: Kazuhisa Okai, Etsuo Hamada, Syuji Nomura
  • Publication number: 20090162240
    Abstract: A brake disk including, by mass, 0.1% or less of C, 1.0% or less of Si, 2.0% or less of Mn, 10.5% to 15.0% of Cr, 2.0% or less of Ni, greater than 0.5% to 4.0% of Cu, 0.02% to 0.3% of Nb, and 0.1% or less of N and further including N, Nb, Cr. Si, Ni, Mn, Mo, and Cu, the remainder being Fe and unavoidable impurities, such that the following inequalities are satisfied: 5Cr+10Si+15Mo+30Nb?9Ni?5Mn?3Cu?225N?270C<45??(1) 0.03?{C+N?(13/93)Nb}?0.09??(2) and having a martensitic structure having prior-austenite grains with an average diameter of 8 ?m or more, a hardness of 32 to 38 HRC, and high temper softening resistance.
    Type: Application
    Filed: October 5, 2006
    Publication date: June 25, 2009
    Applicant: JFE Steel Corp.
    Inventors: Junichiro Hirasawa, Takako Yamashita, Noriko Makiishi, Etsuo Hamada, Takumi Ujiro, Osamu Furukimi
  • Publication number: 20080149228
    Abstract: A method for producing a hot-dip galvanized steel sheet which includes a hot-dip galvanization step, a temper rolling step and an oxidation step.
    Type: Application
    Filed: January 8, 2008
    Publication date: June 26, 2008
    Applicant: JFE STEEL CORPORATION
    Inventors: Shoichiro Taira, Masaki Tada, Yoshiharu Sugimoto, Masayasu Nagoshi, Takashi Kawano, Etsuo Hamada, Satoru Ando, Shinji Ootsuka, Masaaki Yamashita
  • Patent number: 7338718
    Abstract: A hot-dip galvanized steel sheet includes a plating layer substantially composed of the ? phase and an oxide layer disposed on a surface of the plating layer. The oxide layer has an average thickness of 10 nm or more and includes a Zn-based oxide layer and an Al-based oxide layer. A method for producing the hot-dip galvanized steel sheet includes a hot-dip galvanization step, a temper rolling step, and an oxidation step.
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: March 4, 2008
    Assignee: JFE Steel Corporation
    Inventors: Shoichiro Taira, Masaki Tada, Yoshiharu Sugimoto, Masayasu Nagoshi, Takashi Kawano, Etsuo Hamada, Satoru Ando, Shinji Ootsuka, Masaaki Yamashita
  • Publication number: 20050139291
    Abstract: A hot-dip galvanized steel sheet includes a plating layer substantially composed of the ? phase and an oxide layer disposed on a surface of the plating layer. The oxide layer has an average thickness of 10 nm or more and includes a Zn-based oxide layer and an Al-based oxide layer. A method for producing the hot-dip galvanized steel sheet includes a hot-dip galvanization step, a temper rolling step, and an oxidation step.
    Type: Application
    Filed: October 17, 2003
    Publication date: June 30, 2005
    Applicant: JFE STEEL CORPORATION
    Inventors: Shoichiro Taira, Masaki Tada, Yoshiharu Sugimoto, Masayasu Nagoshi, Takashi Kawano, Etsuo Hamada, Satoru Ando, Shinji Ootsuka, Masaaki Yamashita
  • Patent number: 6677053
    Abstract: A surface-treated steel sheet includes a steel sheet, an Al—Zn-base alloy plating layer formed on the steel sheet, a chemical conversion film provided on the alloy plating layer, and a concentric layer of a Cr compound that is formed on the alloy plating layer of the chemical conversion film. The surface-treated steel sheet may include a steel sheet, an zinc-base plating layer formed on the steel sheet, and a film that contains chromium and calcium and that is formed on the zinc-base plating layer.
    Type: Grant
    Filed: December 17, 2001
    Date of Patent: January 13, 2004
    Assignee: NKK Corporation
    Inventors: Takafumi Yamaji, Kenji Morita, Akira Matsuzaki, Masaaki Yamashita, Etsuo Hamada
  • Publication number: 20020155314
    Abstract: A surface-treated steel sheet includes a steel sheet, an Al—Zn-base alloy plating layer formed on the steel sheet, a chemical conversion film provided on the alloy plating layer, and a concentric layer of a Cr compound that is formed on the alloy plating layer of the chemical conversion film. The surface-treated steel sheet may include a steel sheet, an zinc-base plating layer formed on the steel sheet, and a film that contains chromium and calcium and that is formed on the zinc-base plating layer.
    Type: Application
    Filed: December 17, 2001
    Publication date: October 24, 2002
    Inventors: Takafumi Yamaji, Kenji Morita, Akira Matsuzaki, Masaaki Yamashita, Etsuo Hamada
  • Patent number: 6060899
    Abstract: In a semiconductor circuit device, a wiring line is connected to an internal circuit and to a test circuit which is connected to a power supply voltage line and a ground voltage line. The test circuit includes a first fuse resistor connected to the power supply voltage line, a first resistor connected between the first fuse resistor and the ground voltage line, a second resistor connected to the power supply voltage line, a second fuse resistor connected between the second resistor and the ground voltage line, a p-type transistor and an n-type transistor. The p-type transistor has a first drain connected to the wiring line, a first source connected to the power supply voltage line, and a gate connected to a connection point between the first fuse resistor and the first resistor.
    Type: Grant
    Filed: March 19, 1998
    Date of Patent: May 9, 2000
    Assignee: NEC Corporation
    Inventor: Etsuo Hamada