Abstract: This matching unit is used for a semiconductor plasma processing apparatus supplying high-frequency power via feeding line to an electrode provided in a chamber, and includes first and second variable capacitors, and a distributed constant circuit, which is structured by copper plates connected between an electrode of the second variable capacitor and an end of an internal conductor of the feeding line and the like. The distributed constant circuit and the feeding line delay the phase of a high-frequency voltage by ½ wavelength. Therefore, the same state as those when the electrode of the second variable capacitor and the electrode inside the chamber are directly connected can be realized, and matching is easily attained.

Abstract: This matching unit is used for a semiconductor plasma processing apparatus supplying high-frequency power via feeding line to an electrode provided in a chamber, and includes first and second variable capacitors, and a distributed constant circuit, which is structured by copper plates connected between an electrode of the second variable capacitor and an end of an internal conductor of the feeding line and the like. The distributed constant circuit and the feeding line delay the phase of a high-frequency voltage by ½ wavelength. Therefore, the same state as those when the electrode of the second variable capacitor and the electrode inside the chamber are directly connected can be realized, and matching is easily attained.