Patents by Inventor Eu Jin Hwang
Eu Jin Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10340309Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: GrantFiled: February 18, 2018Date of Patent: July 2, 2019Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Publication number: 20180175105Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: ApplicationFiled: February 18, 2018Publication date: June 21, 2018Inventors: Jong Lam LEE, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Patent number: 9929208Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: GrantFiled: March 16, 2017Date of Patent: March 27, 2018Assignee: Seoul Vlosys Co., Ltd.Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Publication number: 20170186810Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: ApplicationFiled: March 16, 2017Publication date: June 29, 2017Inventors: JONG LAM LEE, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Patent number: 9627435Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: GrantFiled: December 3, 2015Date of Patent: April 18, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Publication number: 20160087003Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.Type: ApplicationFiled: December 3, 2015Publication date: March 24, 2016Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Patent number: 9209223Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20° to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20° to 80° from a horizontal plane.Type: GrantFiled: November 21, 2014Date of Patent: December 8, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Publication number: 20150102367Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20° to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20° to 80° from a horizontal plane.Type: ApplicationFiled: November 21, 2014Publication date: April 16, 2015Inventors: Jong Lam LEE, Jae Ho LEE, Yeo Jin YOON, Eu Jin HWANG, Dae Won KIM
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Patent number: 8895957Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.Type: GrantFiled: August 30, 2013Date of Patent: November 25, 2014Assignee: Seoul Viosys Co., LtdInventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Patent number: 8716727Abstract: Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved.Type: GrantFiled: September 6, 2006Date of Patent: May 6, 2014Assignee: Seoul Opto Device Co., Ltd.Inventors: Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Jong Kyu Kim, Jun Hee Lee
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Patent number: 8704246Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.Type: GrantFiled: April 12, 2013Date of Patent: April 22, 2014Assignee: Seoul Opto Device Co., Ltd.Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Publication number: 20130341592Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.Type: ApplicationFiled: August 30, 2013Publication date: December 26, 2013Applicant: Seoul Opto Device Co., Ltd.Inventors: Jong Lam LEE, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Patent number: 8592802Abstract: A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0<x<1 and 0?y<1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.Type: GrantFiled: April 24, 2012Date of Patent: November 26, 2013Assignee: The Regents of the University of CaliforniaInventors: Michael Iza, Hitoshi Sato, Eu Jin Hwang, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20130234173Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.Type: ApplicationFiled: April 12, 2013Publication date: September 12, 2013Applicant: Seoul Opto Device Co., Ltd.Inventors: Jong Lam LEE, Jae Ho LEE, Yeo Jin YOON, Eu Jin HWANG, Dae Won KIM
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Patent number: 8476648Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane.Type: GrantFiled: June 22, 2006Date of Patent: July 2, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
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Patent number: 8294386Abstract: The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.Type: GrantFiled: September 23, 2011Date of Patent: October 23, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Lacroix Yves
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Publication number: 20120205625Abstract: A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0<x<1 and 0?y<1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.Type: ApplicationFiled: April 24, 2012Publication date: August 16, 2012Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Michael Iza, Hitoshi Sato, Eu Jin Hwang, Steven P. DenBaars, Shuji Nakamura
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Patent number: 8183557Abstract: A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1?xN and InyGa1?yN where 0<x<1 and 0?y<1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.Type: GrantFiled: September 19, 2008Date of Patent: May 22, 2012Assignee: The Regents of the University of CaliforniaInventors: Michael Iza, Hitoshi Sato, Eu Jin Hwang, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20120013260Abstract: The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.Type: ApplicationFiled: September 23, 2011Publication date: January 19, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Jae Ho LEE, Yeo Jin YOON, Eu Jin HWANG, Lacroix YVES
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Patent number: 8054002Abstract: The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.Type: GrantFiled: December 5, 2006Date of Patent: November 8, 2011Assignee: Seoul Opto Device Co., Ltd.Inventors: Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Lacroix Yves