Abstract: In a ferroelectric transistor containing two source/drain zones with a channel region disposed there-between, a first dielectric intermediate layer containing Al2O3 is disposed on a surface of the channel region. A ferroelectric layer and a gate electrode are disposed above the first dielectric intermediate layer. The utilization of Al2O3 in the first dielectric intermediate layer results in the suppression of tunneling of compensation charges from the channel region into the first dielectric layer and thereby improves the time for data storage.

Abstract: The invention relates to a multiwall nanotube having an outer wall and at least one inner wall, in which only the outer wall is oxidized and the inner wall or walls is/are not oxidized.

Abstract: A method of inferring the existence of light by means of a measurement of the electrical characteristics of a nanotube bound to a dye comprises the following steps of:

Abstract: An abrasive slurry for a chemical mechanical polishing of a precious-metal surface includes abrasive particles, which are in organic and/or aqueous suspension, an oxidizing agent and a complex-forming agent which shifts the equilibrium between the precious metal in elemental form and its ions in solution toward the formation of new ions. A chemical-mechanical polishing method is also provided.

Abstract: A polishing liquid is described for a chemical mechanical polishing process step. The polishing liquid contains at least one additive from the class of phase transfer catalysts, with which the rate of removal of metal oxides, in particular iridium oxide, can be increased. Moreover, the additive causes an increase in the ratio of removal rates between iridium oxide and silicon oxide, i.e. in the selectivity, which makes possible the structuring of iridium oxide layers using an oxide mask and a CMP process.