Abstract: The invention relates to a Radio Frequency System and method. A Radio Frequency (RF) system comprising a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI) for switching at least one or more RF signals and said SOI comprises a bulk substrate region and a buried oxide region. At least one filter is adapted to isolate the RF signal from the substrate and/or other high frequency signals or control signals present in the RF system. There is also provided a coupling capacitor adapted to cooperate with the filter to improve linearity of the transistor switch elements.

Abstract: The invention relates to a Radio Frequency System and method. A Radio Frequency (RF) system comprising a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI) for switching at least one or more RF signals and said SOI comprises a bulk substrate region and a buried oxide region. At least one filter is adapted to isolate the RF signal from the substrate and/or other high frequency signals or control signals present in the RF system. There is also provided a coupling capacitor adapted to cooperate with the filter to improve linearity of the transistor switch elements.

Abstract: An RF front end circuit is described. The RF front end circuit comprises a plurality of amplifiers defining multiple amplification branches. A plurality of input nodes are provided which are associated with one or more amplification branches. A plurality of output matching networks are provided which are associated with one or more amplication branches. The amplifiers are selectively controllable such that one or more amplifiers associated with one or more active input nodes are activated while other amplifiers associated with the one or more active input nodes are deactived.

Abstract: The invention relates to a Radio Frequency System and method. A Radio Frequency (RF) system comprising a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI) for switching at least one or more RF signals and said SOI comprises a bulk substrate region and a buried oxide region. At least one filter is adapted to isolate the RF signal from the substrate and/or other high frequency signals or control signals present in the RF system. There is also provided a coupling capacitor adapted to cooperate with the filter to improve linearity of the transistor switch elements.

Abstract: An RF switching circuit is described. The RF switching circuit comprises an RF switch having multiple RF inputs and two or more switch outputs; a low noise amplifier (LNA) having two or more amplification branches, each amplification branch being associated with a corresponding switch output; and a bypass switching mechanism configured for selectively bypassing the amplification branches.

Abstract: A power delivery circuit has power delivery components and a load (ZT) terminal, detectors for measuring voltages at two or more measuring nodes (V1, V3) of the power delivery circuit, and an estimation circuit for using the measurements to estimate current, voltage, or power delivered to a load by the power delivery circuit. The detectors may measure voltages at nodes of transistor switches of the power delivery circuit, particularly at the gates. The power delivery circuit may have switches in series, and the detectors measure voltages at nodes of only a subset of the switches. The detectors in one example measure switch voltages and the estimation circuit estimates power delivered to the load according to a switch voltage and impedance between two nodes of the switch. The switch impedance may be provided during calibration using a reference load. The estimation circuit may be a simple analogue circuit such as an amplifier (AMP1) and a multiplexer (MX1).

Abstract: The invention relates to a Radio Frequency System and method. A Radio Frequency (RF) system comprising a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI) for switching at least one or more RF signals and said SOI comprises a bulk substrate region and a buried oxide region. At least one filter is adapted to isolate the RF signal from the substrate and/or other high frequency signals or control signals present in the RF system. There is also provided a coupling capacitor adapted to cooperate with the filter to improve linearity of the transistor switch elements.

Abstract: A power delivery circuit comprising power delivery components and a load (ZT) terminal, detectors for measuring voltages at two or more measuring nodes (V1, V3) of the power delivery circuit, and an estimation circuit for using the measurements to estimate current, voltage, or power delivered to a load by the power delivery circuit. The detectors may measure voltages at nodes of transistor switches of the power delivery circuit, particularly at the gates. The power delivery circuit may have a plurality of switches in series, and the detectors measure voltages at nodes of only a subset of the switches. The detectors in one example measure switch voltages and the estimation circuit estimates power delivered to the load according to a switch voltage and impedance between two nodes of the switch. The switch impedance may be provided during calibration using a reference load. The estimation circuit may be a simple analogue circuit such as an amplifier (AMP1) and a multiplexer (MX1).

Abstract: Apparatus, methods and articles of manufacture for output impedance matching in multi-band power amplification are provided, wherein an output matching configuration comprising one or more output matching sections, a multi-band diplexer and a switch are connected to an active device.

Abstract: Apparatus, methods and articles of manufacture for multiband transmitter power amplification are provided wherein one or more amplifying devices, of which at least one may be one or more current sources, have impedances matched for different input and output frequencies by way of various impedance matching circuits.

Abstract: An apparatus and method for amplifying a radiofrequency signal using a main Digital to Analog Converter (RFDAC) and a subordinate Digital to Analog Converter (Sub-DAC). The main RFDAC provides a first portion of a N-bit digital output, which specifies the amplification level of the radiofrequency signal, and the sub-DAC provides a second portion of the N-bit digital word. Together, the main RFDAC and the Sub-DAC convert a complete N-bit digital word, where N specifies the resolution of the output radiofrequency signal.

Abstract: Apparatus, methods and articles of manufacture for output impedance matching in multi-band power amplification are provided, wherein an output matching configuration comprising one or more output matching sections, a multi-band diplexer and a switch are connected to an active device.

Abstract: An apparatus and method for biasing a power amplifier circuit operating as a Digital to Analog Converter (DAC) are described. The bias circuit comprises a first transistor with a reference voltage coupled to its base terminal, a second transistor coupled to the emitter terminal of the first transistor at its collector terminal, and a third transistor with its base terminal coupled to the first and second transistors, and to an input signal.

Abstract: A power amplifier having a first stage amplifier and a second stage amplifier, each stage of the power amplifier being configured in one of at least two power states based on a desired power output. When the first and second stages are configured in a first state, the power amplifier delivers efficient amplification in a first output power range and, when the first and second stages are configured in a second state, the power amplifier delivers efficient amplification in a second output power range. By configuring each stage in one of at least two states, a high level of power efficiency can be achieved for a broad range of power levels.

Abstract: Apparatus, methods and articles of manufacture for multiband transmitter power amplification are provided wherein one or more amplifying devices, of which at least one may be one or more current sources, have impedances matched for different input and output frequencies by way of various impedance matching circuits.

Abstract: A power amplifier having a first stage amplifier and a second stage amplifier, each stage of the power amplifier being configured in one of at least two power states based on a desired power output. When the first and second stages are configured in a first state, the power amplifier delivers efficient amplification in a first output power range and, when the first and second stages are configured in a second state, the power amplifier delivers efficient amplification in a second output power range. By configuring each stage in one of at least two states, a high level of power efficiency can be achieved for a broad range of power levels.