Abstract: An improved chemical mechanical polishing method of and apparatus (30) for performing CMP process on a plurality of semiconductor devices includes a plurality of carrier devices (14), each for receiving one of the plurality of semiconductor devices (22) such as a semiconductor wafer. A plurality of polishing pad mechanisms (12) associate with each of the carrier devices (14) so that each of the plurality of polishing pad mechanisms (12) separately and approximately simultaneously polishes one of the plurality of semiconductor devices (22). Control means controls the movement of each of the plurality of polishing pad mechanisms (12) relative to the associated semiconductor device (22) so that the semiconductor device (22) is separately polished.

Abstract: A system and method for conditioning a polishing pad in a chemical-mechanical polishing process for polishing a semiconductor device. In one aspect, a vibrating conditioning device 20 removes slurry build-up, such a slurry glaze and slurry impregnation, on the polishing pad 10 surface to enhance the polishing pad effectiveness. The vibrating conditioning device 20 includes a vibrating mechanism 30 coupled to a pad conditioning device, such as a conventional pad conditioning disk, to vibrate the pad conditioning device 20 during the conditioning operation. In another aspect, a high pressure spray device 12 removes particles from the polishing pad 10 surface to reduce damage to a semiconductor device during chemical-mechanical polishing. The high pressure spray device 12 includes a tube 22 formed to include a plurality of delivery holes 32 through which a pressurized substance is delivered onto the polishing pad 10 surface.

Abstract: A system and method for conditioning a polishing pad.sup.12 in a chemical-mechanical polishing process for polishing a semiconductor wafer. The conditioning system includes a conditioning device 20 into which a plurality of removable inserts 24 are inserted. The inserts each have a tip 26 comprising a conditioning material. During operation, the plurality of insert tips 26 contact the polishing pad 12 to condition the polishing pad 12, thereby enhancing the uniformity of wafers polished by the polishing pad and reducing damage to polished wafers.

Abstract: A conditioning end effector apparatus (10) for conditioning a CMP polish pad (40) includes an end effector (20) for contacting CMP polish pad (40). Holder mechanism (12) includes end effector recess (18) for receiving end effector (20). Spacer mechanism (22 or 22') is also located at predetermined locations in end effector recess (18) to associate with end effector openings (26) in end effector (20). End effector (20) firmly attaches through spacer mechanism (22 or 22') to holder mechanism (12) using a fastening device (24). Because of spacer mechanism (22 or 22'), end effector (20) is at distance from recess face (36) to permit slurry (38) that is deposited on CMP polish pad (40) to pass through end effector openings (26).

Abstract: An improved semiconductor wafer carrier (16) holds semiconductor wafer (14) during a CMP process and achieves a more uniform layer of slurry (24) at greater polishing speeds. Carrier (16) directs slurry (24) between semiconductor wafer (14) and conditioning pad (22) and includes wafer holding surface (52) for holding semiconductor wafer (14) as semiconductor wafer (14) contacts conditioning pad (22) and slurry (24). Outer rim portion (56) surrounds semiconductor wafer holding surface (52). A plurality of slurry channels (58) associate with outer rim portion (56) for receiving slurry (24) and directing slurry (24) between semiconductor wafer (14) and conditioning pad (22) for maintaining a uniform layer of slurry (24) between semiconductor wafer (14) and conditioning pad (22).