Abstract: A method of making a metal or metal alloy target having the steps of providing a billet, the billet having a generally cylindrical configuration and having a central axis, cutting the billet in half parallel to the central axis to form at least a half cylindrical blank, and cross rolling the half cylindrical blank to form a target.

Abstract: A Me-B based alloy spherical powder for use in a sputtering target including a metal powder selected from the group consisting of: Mo, W, Ta, Nb, Hf and Ti; a BN powder; and optionally a binary or ternary compound powder, as well as W/B sputter targets, alloys, and barrier/seed films made by such targets. A combined diffusion barrier layer is provided by sputter coating of a W/B sputter target either directly or by reactive sputtering with nitrogen wherein the B content of the alloy is about 0.5 wt %-10 wt %. The oxygen content of the alloy target is about 50 ppm or less. Preferably, the alloy is 99.995% pure.

Abstract: Methods for making Ta sputter targets and sputter targets made thereby. Ta ingots are compressed along at least two of the x, y, and z dimensions and then cross rolled in at least one of those dimensions. A pair of target blanks is then cut from the cross rolled ingot. The resulting targets have a predominate mix of {100} and {111} textures and have reduced B {100} and B {100} banding factors.

Abstract: Methods for making Ta sputter targets and sputter targets made thereby. Ta ingots are compressed along at least two of the x, y, and z dimensions and then cross rolled in at least one of those dimensions. A pair of target blanks is then cut from the cross rolled ingot. The resulting targets have a predominate mix of {100} and {111} textures and have reduced B {100} and B {111} banding factors.

Abstract: A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher, a density of 3.58 g/cm3 or higher, and a transparency 10% or more. A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher, a density of 3.58 g/cm3 or higher, and an average crystal grain size of 50 ?m or more.

Abstract: A method of making an atomized spherical ?-Ti/Ta alloy powder for additive manufacturing, having the steps of: a) blending elemental Ti and Ta powders to form a Ti—Ta powder composition; b) hot-isostatically pressing said powder composition to form an Ti—Ta electrode; and c) processing said Ti—Ta electrode by electrode induction melting gas atomization (EIGA) to produce an atomized spherical Ti—Ta alloy powder. A true spherical Ti-50 wt % Ta alloy powder, the product obtained by the process having the steps of: (a) blending elemental Ti and Ta powders to form a 50 wt %-50 wt % Ti—Ta powder composition; b) hot-isostatically pressing said powder composition to form a Ti—Ta electrode; and c) processing said Ti—Ta electrode by electrode induction melting gas atomization (EIGA) to produce an atomized spherical Ti-50 wt % Ta powder comprising spherical ?-Ti/Ta alloy particles.

Abstract: A method of making a metal or metal alloy target having the steps of providing a billet, the billet having a generally cylindrical configuration and having a central axis, cutting the billet in half parallel to the central axis to form at least a half cylindrical blank, and cross rolling the half cylindrical blank to form a target.

Abstract: Tungsten sputter targets have a purity of greater than four nines, a density of about 97% and higher, and an oxygen content of 10 ppm or less. Method of making such targets from powder precursors are disclosed wherein the tungsten powder is pressure consolidated such as by CIPing following by a sintering step under a hydrogen atmosphere to control oxygen and carbon content of the target.

Abstract: Methods for making Ta sputter targets and sputter targets made thereby. Ta ingots are compressed along at least two of the x, y, and z dimensions and then cross rolled in at least one of those dimensions. A pair of target blanks is then cut from the cross rolled ingot. The resulting targets have a predominate mix of {100} and {111} textures and have reduced B {100} and B {111} banding factors.

Abstract: Described is a design and method for producing a sputtering target assembly with low deflection made from target material solder bonded to composite backing plate with coefficient of thermal expansion (CTE) matching the target material. The composite backing plate is composite configuration composed of at least two different materials with different CTE. The composite backing plate, after plastic deformation, if necessary, has a CTE matching the target material and low and desirable deflection in the bonding process, and therefore, resulting in a low deflection and low stress target material bonded to composite backing plate assembly. The method includes manufacturing composite backing plate with a flat bond surface, heat treating of target blank and composite backing plate to achieve desirable shape of bond surfaces, solder bonding target to a backing plate, and slowly cooling the assembly to room temperature.

Abstract: A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

Abstract: A sputter target assembly comprising a Si target and a backing plate is provided wherein the backing plate is bonded to the target. The Si target comprises a smooth, mirror-like surface and has a surface roughness of less than about 15.0 Angstroms. Methods are provided for producing silicon target/backing plate assemblies wherein a silicon blank is processed to remove scratches from the blank surface resulting in a mirror like surface on the target, and a surface roughness of 15.0 Angstroms or less. The method comprises a first and second cleaning step with the first step being performed before the scratch removal step, and the second step being performed after the scratch removal.

Abstract: A sputter target assembly comprising a Si target and a backing plate is provided wherein the backing plate is bonded to the target. The Si target comprises a smooth, mirror-like surface and has a surface roughness of less than about 15.0 Angstroms. Methods are provided for producing silicon target/backing plate assemblies wherein a silicon blank is processed to remove scratches from the blank surface resulting in a mirror like surface on the target, and a surface roughness of 15.0 Angstroms or less. The method comprises a first and second cleaning step with the first step being performed before the scratch removal step, and the second step being performed after the scratch removal.

Abstract: Sputter targets and methods of making same. The targets comprise B doped n-type Si. The targets may be made from single crystal boron doped p-type Si ingot made by the CZ method. Resistivities along the length of the crystal are measured, and blanks may be cut perpendicular to the ingot central axis at locations having resistivities of from about 1-20 ohm.cm. The blanks are then formed to acceptable shapes suitable for usage as sputter targets in PVD systems. No donor killing annealing is performed on the ingot or blanks.

Abstract: A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

Abstract: Sputter targets and method of producing same having improved pass through flux (PTF). The targets may consist essentially of Fe—Co wherein the Co is predominantly hcp phase. The targets are prepared via powder precursors wherein at least the Co is made by a gas atomization process. This atomization process includes the steps of subjecting liquid Co to the action of dry argon gas and solidifying the liquid into small droplets. After the requisite powders have been sintered, they may be cold worked at temperatures of about 25-422° C.

Abstract: A sputtering target assembly and method of manufacturing the sputtering target assembly is provided. The sputtering target assembly may have a target blank. The target blank may have at least one planar surface with a thickness T1 and a concave center with a thickness T2, wherein T2 is less than T1.

Abstract: Described is a design and method for producing a sputtering target assembly with low deflection made from target material solder bonded to composite backing plate with coefficient of thermal expansion (CTE) matching the target material. The composite backing plate is composite configuration composed of at least two different materials with different CTE. The composite backing plate, after plastic deformation, if necessary, has a CTE matching the target material and low and desirable deflection in the bonding process, and therefore, resulting in a low deflection and low stress target material bonded to composite backing plate assembly. The method includes manufacturing composite backing plate with a flat bond surface, heat treating of target blank and composite backing plate to achieve desirable shape of bond surfaces, solder bonding target to a backing plate, and slowly cooling the assembly to room temperature.

Abstract: A sputtering target made of aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm by weight, which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.

Abstract: A sputter target assembly comprising a Si target and a backing plate is provided wherein the backing plate is bonded to the target. The Si target comprises a smooth, mirror-like surface and has a surface roughness of less than about 15.0 Angstroms. Methods are provided for producing silicon target/backing plate assemblies wherein a silicon blank is processed to remove scratches from the blank surface resulting in a mirror like surface on the target, and a surface roughness of 15.0 Angstroms or less. The method comprises a first and second cleaning step with the first step being performed before the scratch removal step, and the second step being performed after the scratch removal.