Abstract: Proposed is a method for manufacturing a selective emitter using a surface structure, the method includes: preparing a wafer; forming fine first surface unevenness in each of front and rear faces of the wafer; forming a texturing-inhibiting film on each of the front and rear faces of the wafer; partially patterning the front texturing-inhibiting film to expose a portion of the front face of the wafer; forming second surface unevenness in the exposed portion of the wafer, wherein the second surface unevenness has a roughness greater and deeper than a roughness of the first surface unevenness; removing the texturing-inhibiting films; and forming a selective emitter on a surface of the wafer having the first surface unevenness and the second surface unevenness defined therein using a doping process.

Abstract: Proposed is a method for manufacturing a selective emitter using a surface structure, the method includes: preparing a wafer; forming fine first surface unevenness in each of front and rear faces of the wafer; forming a texturing-inhibiting film on each of the front and rear faces of the wafer; partially patterning the front texturing-inhibiting film to expose a portion of the front face of the wafer; forming second surface unevenness in the exposed portion of the wafer, wherein the second surface unevenness has a roughness greater and deeper than a roughness of the first surface unevenness; removing the texturing-inhibiting films; and forming a selective emitter on a surface of the wafer having the first surface unevenness and the second surface unevenness defined therein using a doping process.

Abstract: A method for manufacturing a back contact solar cell according to the present invention comprises the following steps: preparing a p-type silicon substrate having a via hole; performing a diffusion process to form an emitter layer all over the surface of the substrate; forming an etching mask on the front surface and back surface of the substrate so as to selectively expose a portion of the substrate; etching a portion of the thickness of the substrate in the region exposed to the etching mask so as to remove an emitter layer in the relevant region; forming an anti-reflection film on the front surface of the substrate; and forming a grid electrode on the front surface of the substrate, and forming an n-electrode and a p-electrode on the back surface of the substrate.

Abstract: The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n?) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.

Abstract: A method for manufacturing a back contact solar cell according to the present invention comprises the following steps: preparing a p-type silicon substrate having a via hole; performing a diffusion process to form an emitter layer all over the surface of the substrate; forming an etching mask on the front surface and back surface of the substrate so as to selectively expose a portion of the substrate; etching a portion of the thickness of the substrate in the region exposed to the etching mask so as to remove an emitter layer in the relevant region; forming an anti-reflection film on the front surface of the substrate; and forming a grid electrode on the front surface of the substrate, and forming an n-electrode and a p-electrode on the back surface of the substrate.

Abstract: The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n?) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.

Abstract: The present invention provides a method for manufacturing a solar cell. The method for manufacturing a solar cell comprises: forming via holes in a silicon wafer; forming a shallow emitter on the front surface and the rear surface of the wafer, connecting the inner walls of the via holes and the via holes; and selectively forming an emitter through the heavy doping of a dopant to provide a plurality of regions along a direction linking the via holes of the shallow emitter with a certain concentration or higher. Accordingly, the present invention can selectively form an emitter on an MWT solar cell by performing laser doping or etching on a region contacting a front surface electrode having a certain width and height.

Abstract: A solar cell and a manufacturing method thereof. A method of manufacturing a solar cell includes: forming an emitter layer on a first surface of a semiconductor substrate; forming an insulation layer on the emitter layer; applying a chemical compound including a dopant having a conductive type of the emitter layer on the insulation layer according to a pattern; forming a high concentration emitter portion by removing a portion of the insulation layer corresponding to a positioning of the chemical compound and diffusing the dopant toward the emitting layer; removing the chemical compound; and forming a first electrode electrically connected to the high concentration emitter portion.

Abstract: A solar cell and a manufacturing method thereof. A method of manufacturing a solar cell includes: forming an emitter layer on a first surface of a semiconductor substrate; forming an insulation layer on the emitter layer; applying a chemical compound including a dopant having a conductive type of the emitter layer on the insulation layer according to a pattern; forming a high concentration emitter portion by removing a portion of the insulation layer corresponding to a positioning of the chemical compound and diffusing the dopant toward the emitting layer; removing the chemical compound; and forming a first electrode electrically connected to the high concentration emitter portion.