Patents by Inventor Eun-hee Shin
Eun-hee Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240158621Abstract: A composite resin composition and a molded product for a vehicle interior using the composite resin composition are disclosed. The molded product is manufactured from the composite resin composition at low cost in an eco-friendly manner by removing a painting or fiber wrapping operation. The composite resin effectively improves surface quality of the molded product for a vehicle interior.Type: ApplicationFiled: May 4, 2023Publication date: May 16, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, HDC HYUNDAI ENGINEERING PLASTICS CO., LTD.Inventors: Jin Gi Ahn, Eun Seob Shin, Jun Hyeong Ban, Chang Hee Kang
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Publication number: 20240092228Abstract: A seat for a vehicle, includes a second row center seat and a second row side seat provided on a partition wall positioned rearward of a driver seat, the second row center seat may move leftward or rightward, and an interval between the seats may be increased in a state in which the second row center seat is moved in a right direction away from the second row side seat, which makes it possible to maximally prevent body contact between a passenger in the second row center seat and a passenger in the second row side seat.Type: ApplicationFiled: January 20, 2023Publication date: March 21, 2024Applicants: Hyundai Motor Company, Kia Corporation, Hyundai Transys Inc.Inventors: Jung Sang YOU, Yong Chul Kim, Dae Hee Lee, Eun Sue Kim, Jae Hoon Cho, Han Kyung Park, Jae Sung Shin, Hae Dong Kwak, Jun Sik Hwang, Gwon Hwa Bok
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Patent number: 11932140Abstract: Disclosed is a cushion tip-up type seat for a vehicle. The cushion tip-up type seat for a vehicle is configured to perform a tip-up function of a cushion part, and to move a seat leftward and rightward to adjust an interval between left and right seats, whereby left and right spacing between occupants seated in the seats is sufficiently secured and the convenience of the occupants is improved.Type: GrantFiled: July 13, 2022Date of Patent: March 19, 2024Assignees: Hyundai Motor Company, Kia Corporation, Hyundai Transys Inc.Inventors: Dong Woo Jeong, Eun Sue Kim, Dae Hee Lee, Myung Hoe Kim, Jun Sik Hwang, Gwon Hwa Bok, Hae Dong Kwak, Jae Sung Shin, Han Kyung Park, Jae Hoon Cho
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Publication number: 20240090321Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, an organic electroluminescent device having improved driving voltage, power efficiency and/or lifetime characteristics compared to conventional organic electroluminescent devices can be provided.Type: ApplicationFiled: July 17, 2023Publication date: March 14, 2024Inventors: So-Young JUNG, Hyun-Ju KANG, Sang-Hee CHO, Tae-Jun HAN, Hyo-Nim SHIN, Eun-Joung CHOI
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Publication number: 20240067056Abstract: The present disclosure relates to a vehicle rear seat including: a center seat; and side seats located on the left and right of the center seat, wherein, the center seat is capable of protruding by moving the center seat forward with respect to the side seats, and in the state in which the center seat protrudes forward, it is possible to increase an inter-passenger distance so that physical contact between the passenger of the center seat and the passenger of each of the side seats can be prevented as much as possible.Type: ApplicationFiled: March 6, 2023Publication date: February 29, 2024Inventors: Jung Sang You, Yong Chul Kim, Dae Hee Lee, Eun Sue Kim, Jae Hoon Cho, Han Kyung Park, Jae Sung Shin, Hae Dong Kwak, Jun Sik Hwang, Gwon Hwa Bok
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Patent number: 6585907Abstract: An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.Type: GrantFiled: April 23, 2001Date of Patent: July 1, 2003Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Hee Shin, Jin-Man Kim, Baik-Soon Choi, Hun Cha
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Patent number: 6499492Abstract: A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.Type: GrantFiled: August 7, 2000Date of Patent: December 31, 2002Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-bum Cho, Hak-pil Kim, Eun-hee Shin, Baik-soon Choi
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Publication number: 20020061650Abstract: A metallization process for manufacturing semiconductor devices and a system that uses the same that minimizes corrosion failures in aluminum patterns. The process for the metal pattern formation is carried out by loading a semiconductor wafer into an etching chamber, the semiconductor wafer having a photoresist pattern formed over a metal material layer, stabilizing the environment in the etching chamber, main-etching the metal material layer to the etch-end point by using the photoresist pattern as an etch mask while supplying etching gas containing chlorine (Cl2) into the etching chamber, over-etching the metal material layer for a certain period of time over the etch-end point so as to form metal patterns, purging the etching chamber after the over-etching step, and unloading the wafer from the etching chamber. The pressure in the transfer module is optimized, and the load lock chamber is continuously purged.Type: ApplicationFiled: November 27, 2001Publication date: May 23, 2002Inventors: Baik-Soon Choi, Jae-Saeng Lee, Eun-Hee Shin, Sung-Bum Cho
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Patent number: 6335284Abstract: A metallization process for manufacturing semiconductor devices and a system that uses the same that minimizes corrosion failures in aluminum patterns. The process for the metal pattern formation is carried out by loading a semiconductor wafer into an etching chamber, the semiconductor wafer having a photoresist pattern formed over a metal material layer, stabilizing the environment in the etching chamber, main-etching the metal material layer to the etch-end point by using the photoresist pattern as an etch mask while supplying etching gas containing chlorine (Cl2) into the etching chamber, over-etching the metal material layer for a certain period of time over the etch-end point so as to form metal patterns, purging the etching chamber after the over-etching step, and unloading the wafer from the etching chamber. The pressure in the transfer module is optimized, and the load lock chamber is continuously purged.Type: GrantFiled: August 31, 1999Date of Patent: January 1, 2002Assignee: Samsung Electronics Co., Ltd.Inventors: Baik-soon Choi, Jae-saeng Lee, Eun-hee Shin, Sung-bum Cho
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Publication number: 20010022157Abstract: An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.Type: ApplicationFiled: April 23, 2001Publication date: September 20, 2001Inventors: Eun-Hee Shin, Jin-Man Kim, Baik-Soon Choi
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Patent number: 6251241Abstract: An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.Type: GrantFiled: April 10, 2000Date of Patent: June 26, 2001Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Hee Shin, Jin-Man Kim, Baik-Soon Choi, Hun Cha
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Patent number: 6179955Abstract: A dielectric window of a dry etching apparatus for manufacturing semiconductor devices is shaped so that areas of high density plasma in the etching apparatus correspond to portions of the dielectric window further away from the wafer and areas of lower density plasma correspond to portions of the dielectric window closer to the wafer. For example, the dielectric window may be curve inwards at its center in a concave-shape.Type: GrantFiled: May 24, 1999Date of Patent: January 30, 2001Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-hee Shin, Sung-bum Cho, Baik-soon Choi, Young-koo Lee
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Patent number: 6146492Abstract: A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.Type: GrantFiled: October 14, 1998Date of Patent: November 14, 2000Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-bum Cho, Hak-pil Kim, Eun-hee Shin, Baik-soon Choi