Abstract: The present invention relates to a conductive composition for forming a back electrode of a liquid crystal device, and a formation method of a back electrode using the same. The conductive composition enables the supply of a back electrode having excellent coating uniformity, low surface resistance, high transmittance and surface hardness, and particularly excellent reliability of 500 hours.

Abstract: A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer and a mixed solvent including a first solvent, a second solvent having a higher volatility than the first solvent, and a third solvent having a higher volatility than the second solvent. The coating layer is exposed to light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Abstract: A photoresist composition, a method of forming a pattern, and a method of manufacturing a thin film transistor substrate, the composition including a solvent, a novolak resin, a diazide-based photo-sensitizer, an acryl compound represented by the following Chemical Formula 1:

Abstract: A photoresist composition may include a novolac resin, a diazide-based photosensitive compound, a surfactant represented by Chemical Formula 1 below, and a solvent. R1 and R2 may denote a hydrogen atom or an alkyl group, x may be 10-50, and y may be 10-50.

Abstract: A photoresist composition, a method of forming a pattern, and a method of manufacturing a thin film transistor substrate, the composition including a solvent, a novolak resin, a diazide-based photo-sensitizer, an acryl compound represented by the following Chemical Formula 1:

Abstract: A photoresist composition may include a novolac resin, a diazide-based photosensitive compound, a surfactant represented by Chemical Formula 1 below, and a solvent. R1 and R2 may denote a hydrogen atom or an alkyl group, x may be 10-50, and y may be 10-50.

Abstract: A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Abstract: The present invention relates to a conductive composition for forming a back electrode of a liquid crystal device, and a formation method of a back electrode using the same. The conductive composition enables the supply of a back electrode having excellent coating uniformity, low surface resistance, high transmittance and surface hardness, and particularly excellent reliability of 500 hours.

Abstract: A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer and a mixed solvent including a first solvent, a second solvent having a higher volatility than the first solvent, and a third solvent having a higher volatility than the second solvent. The coating layer is exposed to light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Abstract: A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.