Abstract: The present invention relates to the stabilization of an effective ingredient by using a mineral material. In the present invention, the effective ingredient can be stably supported using the mineral material, and a microcapsule obtained by the manufacturing method according to the present invention, when discharged to nature, causes no environmental problems due to encapsulation ingredients thereof being the same as soil ingredients, and thus can avoid micro-plastic issues.

Abstract: The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.

Abstract: A compound with enhanced etching resistance, gap-filling properties, and heat resistance includes a repeating unit represented by Formula 1.

Abstract: A multilayer capacitor includes a body including a multilayer structure in which a plurality of dielectric layers are provided and a plurality of internal electrodes are stacked with the dielectric layer interposed therebetween and external electrodes disposed outside the body and connected to the plurality of internal electrodes. The body includes a high resistance portion disposed in at least one region between the dielectric layer and the internal electrode and inside the dielectric layer and having electric resistance higher than electric resistance of the internal electrode, and the high resistance portion and the plurality of internal electrodes include the same metal component and the same metal oxide component.

Abstract: The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.

Abstract: The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.

Abstract: A multilayer capacitor includes a body including a multilayer structure in which a plurality of dielectric layers are provided and a plurality of internal electrodes are stacked with the dielectric layer interposed therebetween and external electrodes disposed outside the body and connected to the plurality of internal electrodes. The body includes a high resistance portion disposed in at least one region between the dielectric layer and the internal electrode and inside the dielectric layer and having electric resistance higher than electric resistance of the internal electrode, and the high resistance portion and the plurality of internal electrodes include the same metal component and the same metal oxide component.

Abstract: The present disclosure relates to a display device. The display device may be used for a vehicle and may include a display panel, a window, and a first light control layer. The display panel includes pixels arranged along a first direction and a second direction crossing the first direction. The window is disposed on the display panel. The first light control layer is disposed between the display panel and the window and including first photochromic lines. The first photochromic lines extend in the first direction and are arranged along the second direction and include a photochromic material.

Abstract: An intermediate material of a thermoplastic prepreg for a fuel cell separation plate comprises a hydrophobic thermoplastic resin film and a fiber base. The hydrophobic thermoplastic resin film has a degree of crystallization of 1 to 20%, a thickness of 3 to 50 ?m, and (iii) a content of an electroconductive material of 1 to 20 wt. %. The film is laminated on at least one surface of the fiber base. The thermoplastic prepreg for a fuel cell separation plate is manufactured by pressurizing the thermoplastic prepreg intermediate material at a temperature higher than the melting point of the hydrophobic thermoplastic resin film. A fuel cell separation membrane manufactured using the thermoplastic prepreg intermediate material and thermoplastic prepreg is thin and light-weight, and have a good durability.

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: A filament web type precursor fabric for an activated carbon fiber fabric is produced by (i) spreading precursor filaments for preparing activated carbon fiber in a web state; and (ii) punching the precursor filaments for preparing activated carbon fiber spread in a web state to entangle the precursor filaments for preparing activated carbon fiber with each other. The filament web type precursor fabric has a structure in which the precursor filaments for preparing activated carbon fiber are spread in a web form and entangled with each other, and has a weight per unit area ranging from 50 to 500 g/m2. An activated carbon fiber fabric manufactured by activating the filament web type precursor fabric contains yarns with improved and uniform durability and crystallinity, and an shows improved performance of forming microfine pores having a diameter of 1 to 2 nm.

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: A method for preparing a high quality thermoplastic prepreg, includes: laminating a thermoplastic resin film having a crystallization degree in a range of 1 to 20% on at least one surface of a matrix fiber; and heating the laminate to a higher temperature than a melting point of the film, then, pressing the same. The method uniformly impregnates a matrix fiber with a thermoplastic resin, has a short curing cycle in the formation, and involves no random modification in alignment of fibers in the matrix fiber due to a low crystallization degree of the impregnated thermoplastic resin, thereby increasing rigidity of a formed product and enabling reduction of thickness. Thus produced prepreg has a low weight variation per unit area.

Abstract: A 0° unidirectional yarn prepreg and a preparation method are disclosed. The 0° unidirectional yarn prepreg has high-strength filaments which are arranged in parallel to each other in an axial direction X of a winding roller around which unidirectional yarn prepregs are wound and a resin is impregnated. The method includes steps of: (i) weaving a fabric using a thermoplastic film tape as a warp and using high-strength filaments as wefts; and (ii) performing thermal compression on the woven fabric at a temperature in which the warp is melted. Also, a multiaxial prepreg composite material is prepared by simultaneously and continuously supplying the 0° unidirectional yarn prepreg A prepared as described above method and a 90° unidirectional yarn prepreg B prepared by a conventional warping method to a thermal compression roller, and performing thermal compression thereon.

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

Abstract: The present invention provides an all-in-one type continuous reactor for preparing a positive electrode active material for a lithium secondary battery. The continuous reactor includes a flange unit provided at one side of a cylinder; at least one reactant inlet port provided on the flange unit; a reaction product outlet port provided at the other side of the cylinder; a plurality of extra ports provided between the reactant inlet port and the reaction product outlet port; a temperature control unit disposed between an inner circumferential surface and outer circumferential surface; a pulverizing unit provided in the reactant inlet port; a flow rate sensor provided in at least one of the reactant inlet port; and a flow rate control unit configured to control the flow rate of the reactant.

Abstract: A laminate for forming a composite material is provided. The laminate has a structure in that unidirectional yarn sheets S in which yarns are arranged in parallel to each other in one direction without bending and thermoplastic resin films F are alternately stacked so that the film F is located between the unidirectional yarn sheets S. The yarn sheets S and the films F having a degree of crystallinity XC of 30% or less are integrally coupled by stitching yarn Y, and adjacent unidirectional yarn sheets S are obliquely stacked at an angle of ±1° to ±90° to a direction in which yarns included in the respective unidirectional yarn sheets S are arranged. The use of unidirectional yarn sheets S, instead of fabrics or multi-axial fabrics, achieves excellent smoothness. Composite material manufactured using the laminate has uniform physical properties such as strength.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.

Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.