Abstract: Provided is a flat plate-type oxygen sensor element. The flat plate-type oxygen sensor element according to an exemplary embodiment of the present invention includes: a first electrolyte layer having a sensing electrode exposed to a target gas; a second electrolyte layer on which a reference electrode is disposed; and a heating unit having a heating resistor surrounded by an insulating layer and disposed between the sensing electrode and the reference electrode, wherein the heating unit is disposed so that the heating resistor is located at a position ranging from 40 to 60% of a total height from an upper surface of the first electrolyte layer to a lower surface of the second electrolyte layer.

Abstract: A cosmetic composition for skin whitening, wrinkle improvement or skin regeneration includes, as an active ingredient, exosomes derived from stem cells comprising proliferating stem cells.

Abstract: A composition for inducing differentiation into adipocytes or regenerating adipose tissues comprises, as an ingredient, exosomes derived from stem cells differentiating into adipocytes, or exosomes derived from proliferating stem cells.

Abstract: The disclosure provided herewith relates to a Campylobacter jejuni CRISPR/CAS system-derived RGEN and a use thereof.

Abstract: A server, a user terminal apparatus, and a method for providing a streaming data service are disclosed. The method of providing streaming data to a user terminal apparatus from a server includes receiving a describe message from the user terminal apparatus via a real-time stream protocol scheme, transmitting a response message containing content execution information about at least one content of a streaming data service and content list information pre-stored in relation to at least one content stored in a storage medium to the user terminal apparatus when the describe message is received, and transmitting streaming data about content of the streaming data service or content stored in the storage medium to the user terminal apparatus when streaming data service request is received from the user terminal apparatus based on the response message.

Abstract: A semiconductor device includes a circuit device on a substrate and a first insulating interlayer on the substrate and covering the circuit device. An electrode structure extends through the first insulating interlayer and at least partially through the substrate. An etch-stop layer pattern is disposed on a sidewall of the electrode structure on a side of the first insulating layer opposite the substrate. A blocking layer pattern is disposed on the etch-stop layer pattern. The device further includes an interconnection structure including a via portion passing through the blocking layer pattern to contact the through electrode structure and a wiring portion on the via portion and having a different width than the via portion. The semiconductor device may further include a contact plug electrically connected to the circuit device through the first insulating interlayer. The contact plug and the through electrode structure may include different metals.

Abstract: A particulate matter sensor and an exhaust gas purification system using the same are provided. A particular matter sensor according to some embodiments of the present invention includes a first insulation layer including a first electrode unit exposed on a first side thereof, which includes a plurality of first electrodes not electrically connected to each other, a second insulation layer arranged in parallel to the first insulation layer with a space therebetween, including a second electrode unit on a first side thereof, which includes a plurality of second electrodes electrically connected to each other, a temperature sensing unit formed on a first side of a third insulation layer located on a second side of the second insulation layer, and a heater unit formed on a first side of a fourth insulation layer located on a second side of the third insulation layer, the heater unit configured to heat the first and second electrode units.

Abstract: Semiconductor devices including a protection pattern for reducing galvanic corrosion and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate including a keep out zone (KOZ) and a plurality of interconnections, which may be disposed outside of the KOZ on the substrate. The semiconductor devices may also include a through silicon via (TSV) in the KOZ. The TSV may pass through the substrate. The semiconductor device may further include a protection pattern, which may be electrically insulated from the TSV, may be disposed in the KOZ and may include a different conductive material from the TSV. A lower end of the protection pattern may be disposed at a level higher than a lower end of the TSV.

Abstract: A semiconductor device includes a circuit device on a substrate and a first insulating interlayer on the substrate and covering the circuit device. An electrode structure extends through the first insulating interlayer and at least partially through the substrate. An etch-stop layer pattern is disposed on a sidewall of the electrode structure on a side of the first insulating layer opposite the substrate. A blocking layer pattern is disposed on the etch-stop layer pattern. The device further includes an interconnection structure including a via portion passing through the blocking layer pattern to contact the through electrode structure and a wiring portion on the via portion and having a different width than the via portion. The semiconductor device may further include a contact plug electrically connected to the circuit device through the first insulating interlayer. The contact plug and the through electrode structure may include different metals.

Abstract: The present invention provides a cable-type secondary battery comprising an inner electrode which includes at least one first polarity electrode having a first polarity current collector with a long and thin shape, whose cross-section perpendicular to its longitudinal direction is a circular, oval or polygonal form; a first polarity electrode active material layer formed on an outer surface of the first polarity current collector; and an electrolyte layer filled to surround the first polarity electrode active material layer, and at least one wire-type second polarity electrode which wholly surrounds the inner electrode and is winding around the exterior thereof. Thus, the inventive cable-type secondary battery provided with an outer winding electrode has excellent flexibility to prevent the release of the active material.

Abstract: Semiconductor devices including a protection pattern for reducing galvanic corrosion and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate including a keep out zone (KOZ) and a plurality of interconnections, which may be disposed outside of the KOZ on the substrate. The semiconductor devices may also include a through silicon via (TSV) in the KOZ. The TSV may pass through the substrate. The semiconductor device may further include a protection pattern, which may be electrically insulated from the TSV, may be disposed in the KOZ and may include a different conductive material from the TSV. A lower end of the protection pattern may be disposed at a level higher than a lower end of the TSV.

Abstract: A server, a user terminal apparatus, and a method for providing a streaming data service are disclosed. The method of providing streaming data to a user terminal apparatus from a server includes receiving a describe message from the user terminal apparatus via a real-time stream protocol scheme, transmitting a response message containing content execution information about at least one content of a streaming data service and content list information pre-stored in relation to at least one content stored in a storage medium to the user terminal apparatus when the describe message is received, and transmitting streaming data about content of the streaming data service or content stored in the storage medium to the user terminal apparatus when streaming data service request is received from the user terminal apparatus based on the response message.

Abstract: A semiconductor device includes a first low-k dielectric layer structure including at least one first low-k dielectric layer sequentially stacked on a substrate, a via structure extending through at least a portion of the substrate and the first low-k dielectric layer structure, and a first blocking layer pattern structure spaced apart from the via structure in the first low-k dielectric layer structure. The first blocking layer pattern structure surrounds a sidewall of the first blocking layer structure.

Abstract: An integrated circuit device includes a substrate having a plurality of device patterns thereon. A device isolation layer is provided on the substrate, an interlayer dielectric layer is provided on the device isolation layer and the substrate, and a conductive via extends through the interlayer dielectric layer and the device isolation layer and into the substrate. A conductive via contact pad is provided on the interlayer dielectric layer in electrical contact with the conductive via. In plan view, the conductive via contact pad is confined within an area of the interlayer dielectric layer and/or an area of the device isolation layer that electrically insulates the conductive via contact pad from the substrate. Related methods and devices are also discussed.

Abstract: A method for outputting data by using a proximity sensor in a mobile device is provided. The method includes emitting light in a proximity sensing mode and detecting light reflected by a gesture, processing a signal of the detected light, comparing the processed signal with a preset value, providing comparison data based on the compared signal with the preset value, and outputting data converted based on a result of analyzing the comparison data.

Abstract: A semiconductor device includes a substrate having a via region and a circuit region, an insulation interlayer formed on a top surface of the substrate, a through electrode having a first surface and a second surface, wherein the through electrode penetrates the via region of the substrate and the second surface is substantially coplanar with a bottom surface of the substrate, a first upper wiring formed on a portion of the first surface of the through electrode, a plurality of via contacts formed on a portion of a top surface of the first upper wiring, and a second upper wiring formed on the plurality of via contacts.

Abstract: An integrated circuit device includes a substrate having a plurality of device patterns thereon. A device isolation layer is provided on the substrate, an interlayer dielectric layer is provided on the device isolation layer and the substrate, and a conductive via extends through the interlayer dielectric layer and the device isolation layer and into the substrate. A conductive via contact pad is provided on the interlayer dielectric layer in electrical contact with the conductive via. In plan view, the conductive via contact pad is confined within an area of the interlayer dielectric layer and/or an area of the device isolation layer that electrically insulates the conductive via contact pad from the substrate. Related methods and devices are also discussed.

Abstract: The present invention provides a cable-type secondary battery comprising an inner electrode which includes at least one first polarity electrode having a first polarity current collector with a long and thin shape, whose cross-section perpendicular to its longitudinal direction is a circular, oval or polygonal form; a first polarity electrode active material layer formed on an outer surface of the first polarity current collector; and an electrolyte layer filled to surround the first polarity electrode active material layer, and at least one wire-type second polarity electrode which wholly surrounds the inner electrode and is winding around the exterior thereof. Thus, the inventive cable-type secondary battery provided with an outer winding electrode has excellent flexibility to prevent the release of the active material.

Abstract: A semiconductor device includes a substrate having a via region and a circuit region, an insulation interlayer formed on a top surface of the substrate, a through electrode having a first surface and a second surface, wherein the through electrode penetrates the via region of the substrate and the second surface is substantially coplanar with a bottom surface of the substrate, a first upper wiring formed on a portion of the first surface of the through electrode, a plurality of via contacts formed on a portion of a top surface of the first upper wiring, and a second upper wiring formed on the plurality of via contacts.

Abstract: The present invention relates to a method for genomic DNA rearrangements, and more particularly, to a method for deletion, duplication, inversion, replacement, or rearrangement of genomic DNA using pairs of site-specific nucleases targeting two or more sites in the genome, a cell in which genomic DNA is deleted, duplicated, inverted, replaced, or rearranged by the same method, and a method for expressing the site-specific nucleases in cells. Further, the present invention relates to a method for inserting synthetic DNA molecules into the genome using site-specific nucleases targeting a pre-determined site in the genome, a cell in which DNA insertion occurs by the same method, and a method for expressing the site-specific nucleases in cells.