Patents by Inventor Eun-Pyo Kim
Eun-Pyo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11982705Abstract: A substrate analysis apparatus is provided. The substrate analysis includes: an interlayer conveying module configured to transport a first FOUP; an exchange module which is connected to the interlayer conveying module, and configured to transfer a wafer from the first FOUP to a second FOUP; a pre-processing module configured to form a test wafer piece using the wafer inside the second FOUP; an analysis module configured to analyze the test wafer piece; and a transfer rail configured to transport the second FOUP containing the wafer and a tray containing the test wafer piece. The wafer includes a first identifier indicating information corresponding to the wafer, the test wafer piece includes a second identifier indicating information generated by the pre-processing module which corresponds to the test wafer piece, and the analysis module is configured to analyze the first identifier and the second identifier in connection with each other.Type: GrantFiled: March 9, 2022Date of Patent: May 14, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Youn Gon Oh, Ji Hun Kim, Sae Yun Ko, Gil Ho Gu, Dong Su Kim, Eun Hee Lee, Ho Chan Lee, Seong Sil Jeong, Seong Pyo Hong
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Patent number: 7172725Abstract: In W—Cu alloy having a homogeneous micro-structure and a fabrication method thereof, the method includes forming mixed powders by mixing tungsten powders with W—Cu composite powders; forming a compact by pressurizing-forming the mixed powders; forming a skeleton by sintering the compact; and contacting copper to the skeleton and performing infiltration. W—Cu alloy having a homogeneous structure fabricated by the present invention shows better performance by being used as a material for high voltage electric contact of a contact braker, a material for heat sink of an IC semiconductor and a shaped charge liner.Type: GrantFiled: November 28, 2003Date of Patent: February 6, 2007Assignee: Agency For Defense DevelopmentInventors: Moon-Hee Hong, Ja-Ho Choi, Seoung Lee, Eun-Pyo Kim, Sung-Ho Lee, Joon-Woong Noh
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Patent number: 6863707Abstract: Disclosed is a method of forming a W—Cu composite powder having a Cu particle surrounded by tungsten by mixing and pulverizing tungsten oxide powder and copper oxide powder using turbular mixing or ball milling, reducing the Cu powder firstly at 200˜400° C. under a hydrogen atmosphere or a reducing gas environment including hydrogen, generating W nuclei on the reduced Cu powder at 500˜700° C., and growing the generated W nuclei at 750˜1080° C. as well as a use of the same for the use of powder injection molding.Type: GrantFiled: May 6, 2003Date of Patent: March 8, 2005Assignee: Agency for Defense DevelopmentInventors: Seong Lee, Moon-Hee Hong, Joon-Woong Noh, Eun-Pyo Kim, Hung-Sub Song, Woon-Hyung Baek
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Patent number: 6821557Abstract: Disclosed is a tungsten film coating method using tungsten oxide powders including the steps of contacting the tungsten oxide powders with a metal substrate and carrying out thermal reduction treatment thereon at a temperature of at least 650° C. under a hydrogen atmosphere just to coat the tungsten film on the metal substrate. Accordingly, the present invention enables to provide a simple method of coating a tungsten thin film on a metal substrate using the phenomenon of tungsten migration through vapor phase when thermal reduction treatment is carried out on tungsten oxide powders without using previous chemical or physical vapor depositions requiring expensive precision equipments or causing environmental pollution.Type: GrantFiled: January 10, 2003Date of Patent: November 23, 2004Assignee: Agency for Defense DevelopmentInventors: Seong Lee, Moon-Hee Hong, Joon-Woong Noh, Eun-Pyo Kim, Yoon-Sik Park
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Publication number: 20040166014Abstract: Disclosed is a densification process of a W—Cu composite material, and more particularly, a sintering method for a W—Cu composite material without exuding of Cu. The sintering method comprises the steps of: holding a W—Cu composite power compact for a certain time at a Cu solid phase temperature or at a temperature just above a melting point and thus inducing a nearly complete densification; and sintering for a short time at a Cu liquidus temperature.Type: ApplicationFiled: November 28, 2003Publication date: August 26, 2004Applicant: AGENCY FOR DEFENSE DEVELOPMENTInventors: Eun-Pyo Kim, Moon-Hee Hong, Joon-Woong Noh, Seoung Lee, Sung-Ho Lee, Young-Do Kim, Dae-Gun Kim
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Publication number: 20040120840Abstract: In W-Cu alloy having a homogeneous micro-structure and a fabrication method thereof, the method includes forming mixed powders by mixing tungsten powders with W-Cu composite powders; forming a compact by pressurizing-forming the mixed powders; forming a skeleton by sintering the compact; and contacting copper to the skeleton and performing infiltration. W-Cu alloy having a homogeneous structure fabricated by the present invention shows better performance by being used as a material for high voltage electric contact of a contact braker, a material for heat sink of an IC semiconductor and a shaped charge liner.Type: ApplicationFiled: November 28, 2003Publication date: June 24, 2004Applicant: AGENCY FOR DEFENSE DEVELOPMENTInventors: Moon-Hee Hong, Ja-Ho Choi, Seoung Lee, Eun-Pyo Kim, Sung-Ho Lee, Joon-Woong Noh
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Publication number: 20030211238Abstract: Disclosed is a tungsten film coating method using tungsten oxide powders including the steps of contacting the tungsten oxide powders with a metal substrate and carrying out thermal reduction treatment thereon at a temperature of at least 650° C. under a hydrogen atmosphere just to coat the tungsten film on the metal substrate. Accordingly, the present invention enables to provide a simple method of coating a tungsten thin film on a metal substrate using the phenomenon of tungsten migration through vapor phase when thermal reduction treatment is carried out on tungsten oxide powders without using previous chemical or physical vapor depositions requiring expensive precision equipments or causing environmental pollution.Type: ApplicationFiled: January 10, 2003Publication date: November 13, 2003Applicant: Agency For Defense DevelopmentInventors: Seong Lee, Moon-Hee Hong, Joon-Woong Noh, Eun-Pyo Kim, Yoon-Sik Park
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Publication number: 20030205108Abstract: Disclosed is a method of forming a W—Cu composite powder having a Cu particle surrounded by tungsten by mixing and pulverizing tungsten oxide powder and copper oxide powder using turbular mixing or ball milling, reducing the Cu powder firstly at 200˜400° C. under a hydrogen atmosphere or a reducing gas environment including hydrogen, generating W nuclei on the reduced Cu powder at 500˜700° C., and growing the generated W nuclei at 750˜1080° C. as well as a use of the same for the use of powder injection molding.Type: ApplicationFiled: May 6, 2003Publication date: November 6, 2003Applicant: Agency for Defense DevelopmentInventors: Seong Lee, Moon-Hee Hong, Joon-Woong Noh, Eun-Pyo Kim, Hung-Sub Song, Woon-Hyung Baek
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Patent number: 5970307Abstract: A sintering method for a W--Ni--Mn type heavy alloy, including controlling the deoxidization of tungsten and nickel under an inert atmosphere, changing to a hydrogen atmosphere at above a temperature at which manganese is deoxidized and simultaneously deoxidizing tungsten, nickel and manganese, and sintering by raising the temperature, resulting in the fabrication of a sintered heavy alloy having a 100% relative theoretical density.Type: GrantFiled: April 30, 1997Date of Patent: October 19, 1999Assignee: Agency for Defense DevelopmentInventors: Moon Hee Hong, Woon Hyung Baek, Joon Woong Noh, Heung Sub Song, Seong Lee, Eun Pyo Kim
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Patent number: 5956559Abstract: A method for producing an irregular tungsten/matrix interface in tungsten based heavy alloy is disclosed. The method involves a cyclic heat treatment and resintering at above liquidus temperature for tungsten heavy alloys consisting of 80 to 98 weight % tungsten and remainder of matrix phase. The sintered specimens are cyclically heat treated at above 1000.degree. C. and resintered at liquidus temperature of the matrix phase for one minute to 4 hours at a constant temperature.Type: GrantFiled: February 27, 1998Date of Patent: September 21, 1999Assignee: Agency for Defense DevelopmentInventors: Heung Sub Song, Eun Pyo Kim, Seong Lee, Joon Woong Noh, Moon Hee Hong, Woon Hyung Baek
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Patent number: 5956558Abstract: A fabrication method for a tungsten heavy alloy includes first fabricating a green compact or a sintered body composed of tungsten and other elements except manganese, then putting manganese thereon, and sintering the tungsten heavy alloy with manganese manganese, whereby the formation of pores, which occurs because manganese is oxidized by the deoxidation of oxides existing on the surface of powders of tungsten, nickel and iron is prevented, and a tungsten heavy alloy having a 100% non-theoretical density of 100% is obtained.Type: GrantFiled: April 30, 1997Date of Patent: September 21, 1999Assignee: Agency for Defense DevelopmentInventors: Moon Hee Hong, Woon Hyung Baek, Joon Woong Noh, Heung Sub Song, Seong Lee, Eun Pyo Kim