Abstract: Provided are an organic thin film transistor (OTFT) and a fabrication method thereof, an organic semiconductor device having the OTFT, and a flexible display device having the OTFT. The OTFT includes a substrate, a gate electrode, an insulating layer, an active layer, and a source/drain electrode. The gate electrode may be made of a nanocrystalline carbon layer.

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract: A thin film transistor (TFT) substrate for a liquid crystal display is provided. The thin film transistor substrate includes: a plurality of gate lines and a plurality of data lines that cross each other and define a plurality of sub-pixels; and a plurality of unit pixels in which first and second unit pixels are alternately formed in a direction of the gate lines and first and second unit pixels are formed vertically in a direction of the data lines, wherein the first unit pixel includes three sub-pixels and the first electrodes are slanted with respect to the gate lines and the data lines in each sub-pixel, the second unit pixel includes three sub-pixels and the second electrodes are a slanted with respect to the gate lines and the data lines in each sub-pixel, and the slant of the second electrodes is symmetrical to the slant of the first electrodes.

Abstract: The present invention relates to the present invention relates to a time indicating label comprising (a) a label substrate having a first and second surface, (b) an acid-base indicator composition, and (c) an activator composition, wherein one of (b) or (c) are on the first surface of the substrate and wherein (b) and (c) when brought in contact remain adhered. The label may have a pressure sensitive adhesive on the second surface of the label. The invention further relates to a method of using the time-temperature indicating label. The labels provide an effective means for determine the safety of frozen foods. The labels also provide a means of providing security by providing name badges that are time sensitive and may not be reused. The name badges provide a means to monitor the length of a visitor's time and prevents reusing the name badge.

Abstract: An apparatus for cleaning an inside of a chamber using a gas separation type showerhead is provided. The apparatus includes: a gas supply module through which first and second gases are separately supplied; a gas separation module through which the first and second gases are separately dispersed; and a gas injection module that includes a plurality of holes through which the separately dispersed first and second gases are commonly injected into the chamber, wherein at least one gas of the first and second gases includes an ionized first cleaning gas including a gas containing fluorine (F) ingredient, and wherein at least one gas of the first and second gases includes a non-ionized second cleaning gas including nitrogen oxide based gas (NxOy, x and y are integers equal to or more than 1).

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract: Disclosed is an ionic conductor comprising a metal composite oxide characterized by comprising oxygen defects and metal defects in a cryolite lattice. An electrochemical device comprising the ionic conductor is also disclosed. The metal composite oxide has an improved ion conductivity, because formation of an open space within a lattice is ensured by the defects of metal ion sites in the lattice. Therefore, the metal composite oxide is useful for an ionic conductor or an electrochemical device requiring ionic conductivity.

Abstract: Disclosed is a novel strontium-lanthanum-yttrium-containing metal composite oxide. An ionic conductor comprising the metal composite oxide and an electrochemical device comprising the ionic conductor are also disclosed. The metal composite oxide has an improved ionic conductivity, because formation of an open space within a lattice is ensured by the defects of metal ion sites in the lattice. Therefore, the metal composite oxide is useful for an ionic conductor or an electrochemical device requiring ionic conductivity.

Abstract: Disclosed is a novel strontium-lanthanum-tungsten-containing metal composite oxide. An ionic conductor comprising the metal composite oxide and an electrochemical device comprising the ionic conductor are also disclosed. The metal composite oxide has an improved ionic conductivity, because formation of an open space within a lattice is ensured by the defects of metal ion sites in the lattice. Therefore, the metal composite oxide is useful for an ionic conductor or an electrochemical device requiring ionic conductivity.

Abstract: The present invention relates to a method for manufacturing a probe for detecting surface signals or chemical signals through a long and slender rod-shaped nano structure such as tungsten nanowire, carbon nanotube, boron nanotube, etc., being attached to a tip end portion thereof. According to the method, a holder, acting as the probe, including a first electrode to which the rod-shaped nano structure is attached, and a second electrode at a predetermined distance from the first electrode are partially or fully immersed in a solution containing the rod-shaped structure. When a voltage is applied between two electrodes, an electrical field is generated, and the rod-shaped nano structure is attached to the holder, acting as the probe.

Abstract: A semiconductor package comprising a semiconductor die which has opposed first and second surfaces and at least first and second bond pads disposed on the second surface thereof. In addition to the semiconductor die, the semiconductor package includes at least one lead having opposed first and second surfaces, the first surface of the lead being electrically connected to the first bond pad. Also included in the semiconductor package is at least one conductive post having opposed first and second surfaces, the first surface of the conductive post being electrically connected to the second bond pad. A package body at least partially encapsulates the semiconductor die, the lead, and the conductive post such that the second surface of the lead and the second surface of the conductive post are exposed in a common exterior surface of the package body.

Abstract: An apparatus and a method for modifying the surface of a polymer powder utilizes a rotational ultrasonic treatment that pulverizes polymer materials, such as rubber, waste rubber, and plastics, and modifies the surface, so that the polymer materials can be recycled more efficiently. A hopper feeds the pulverized polymer powder. A rotor which is linked to the bottom of the hopper as an integrated body, is linked to a driving mechanism through a power transfer device, and rotates drive. A rotating disk is linked to the bottom of the rotor as an integrated body, and is provided with a downsloped plane. A shaft extends through the hopper, the rotor, and the rotating disk, and discharges the polymer powder fed from the hopper out of the bottom of the rotating disk. An ultrasonic vibrator is positioned at the bottom of the rotating disk, and modifies the polymer powder fed by the shaft using ultrasonic waves.

Abstract: A semiconductor package, and a method for fabricating the semiconductor package, includes a semiconductor die having a plurality of bond pads including a first bond pad positioned at a center of the bond pad and formed at a first surface of the semiconductor die and a second bond pad spaced from the first bond pad by a predetermined distance while surrounding the first bond pad. The semiconductor package includes first and second posts formed on the bond pads of the semiconductor die and a substrate formed with electrically conductive patterns corresponding to the bond pads of the semiconductor die and bonded to the post.

Abstract: Disclosed is metal composite oxides having the new crystal structure. Also disclosed are ionic conductors including the metal composite oxides and electrochemical devices comprising the ionic conductors. The metal composite oxides have an ion channel formed for easy movement of ions due to crystallographic specificity resulting from the ordering of metal ion sites and metal ion defects within the unit cell. Therefore, the metal composite oxides according to the present invention are useful in an electrochemical device requiring an ionic conductor or ionic conductivity.

Abstract: The present invention relates to pyrimidinedione derivatives of following formula (I) which are useful as antiviral agents, especially as agents for treatment of AIDS, pharmaceutically acceptable salts thereof, process for the preparation thereof and pharmaceutical compositions containing the same, wherein R represents cyclopropyl; cyclobutyl; cyclohexyl; unsubstituted or mono-, di- or trisubstituted phenyl with a group selected from hydroxy, C1–C4 alkyl, C1–C4 alkoxy, halogen, trifluoromethyl, cyano and amino; 1- or 2-naphthyl; 9-anthracenyl; 2-anthraquinonyl; unsubstituted or substituted pyridyl with a group selected from C1–C4 alkyl, C1–C4 alkoxy, cyano and halogen; 2-, 3- or 4-quinolinyl; oxiranyl; 1-benzotriazolyl; 2-benzoxazolyl; furanyl substituted with C1–C4 alkoxycarbonyl; C1–C4 alkylcarbonyl; or benzoyl, R1 represents halogen or C1–C4 alkyl, R2 and R3 represent independently hydrogen or C1–C4 alkyl, X represents oxygen atom, and Y represents oxygen atom, sulfur atom or carbonyl.

Abstract: There is explained a method and apparatus of driving a plasma display panel that is capable of increasing a driving margin upon a selective writing and a selective erasing in case that not only the selective writing but also the selective erasing are carried out within one frame period. A method of driving a plasma display panel that selects cells in use of selective writing sub-fields and selective erasing sub-fields arranged within one frame period and has a plurality of scanning electrodes, a plurality of sustaining electrodes and a plurality of address electrodes, according to an embodiment of the present invention includes steps of selecting an on-cell by generating a writing discharge in use of a first scanning voltage in the selective writing sub-fields; and selecting an off-cell by generating an erasing discharge in use of a second scanning voltage in the selective erasing sub-fields.

Abstract: Provided are a transcoding apparatus and method. A frame comparator compares the length of input frames of a transmitting side with the length of output frames of a receiving side. A frame deciding unit decides more than one input frame corresponding to one output frame on the basis of the comparison result and decides the type of the output frame based on the type of the corresponding input frame. A frame converter converts the format of the input frames to the format of the output frames on the basis of the decided type. Accordingly, a frame coded by a voice coder using VAD is easily transformed to the format of another voice coder.

Abstract: Provided are an apparatus and method for converting a pitch delay using linear prediction in speech transcoding. A linear interpolating portion linearly interpolates a closed-loop pitch delay decoded by a selected mode vocoder (SMV) speech decoder to make the closed-loop pitch delay fit in a search section for open-loop pitch delays of G.723.1 speech encoder, to obtain a changed closed-loop pitch delay of the SMV decoder. A predicted value calculating portion calculates a predicted pitch delay using linear prediction, based on past closed-loop pitch delays of the G.723.1 speech encoder. A difference calculating portion calculates a difference between the changed closed-loop pitch delay of the SMV speech decoder and the calculated predicted pitch delay. When the calculated difference is less than the predetermined threshold value, a pitch delay determining portion determines the changed closed-loop pitch delay of the SMV speech decoder to be an open-loop pitch delay of the G.723.1 speech encoder.

Abstract: An apparatus and a method for modifying the surface of a polymer powder utilizes a rotational ultrasonic treatment that pulverizes polymer materials, such as rubber, waste rubber, and plastics, and modifies the surface, so that the polymer materials can be recycled more efficiently. A hopper feeds the pulverized polymer powder. A rotor which is linked to the bottom of the hopper as an integrated body, is linked to a driving mechanism through a power transfer device, and rotates drive. A rotating disk is linked to the bottom of the rotor as an integrated body, and is provided with a downsloped plane. A shaft extends through the hopper, the rotor, and the rotating disk, and discharges the polymer powder fed from the hopper out of the bottom of the rotating disk. An ultrasonic vibrator is positioned at the bottom of the rotating disk, and modifies the polymer powder fed by the shaft using ultrasonic waves.

Abstract: A cleaning method of an apparatus for manufacturing a semiconductor device includes providing a first cleaning gas and a second cleaning gas into a chamber, and forming a mixture of the first cleaning gas and the second cleaning gas, wherein the first cleaning gas includes a fluorocarbon gas and an oxygen gas and the second cleaning gas includes nitrogen, activating the mixture of the first cleaning gas and the second cleaning gas by a high frequency power, and exhausting residues cleaned by the activated mixture and remaining gases.