Abstract: The invention is a nanowire-comprising device for detecting at least one target biomolecule. The nanowires are placed between a substrate and a multilayer structure. The multilayer structure lies between the nanowires and a sample liable to contain a target biomolecule. The multilayer structure comprises a functionalization surface making contact with the sample. When light is emitted from the functionalization surface, fluorescence light for example, at least one nanowire allows the light to be detected. The fluorescence light may indicate the presence or absence of a target biomolecule on the functionalization surface.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ?1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ?200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ?50% and in which a carrier density is ?1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ?50%.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ?1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ?200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ?50% and in which a carrier density is ?1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ?50%.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ?1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ?200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ?50% and in which a carrier density is ?1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ?50%.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.