Abstract: Methods and systems for tracking an edge ring includes capturing an edge ring identifier from a source related to the edge ring. The edge ring is inserted into a slot of an edge ring carrier, wherein the edge ring is being assigned to the edge ring carrier. The edge ring identifier is tracked to determine transfers into and out of the edge ring carrier and into and out of a processing station. The tracking of the edge ring identifier builds a metadata file that provides lifetime information regarding the edge ring.

Abstract: Methods and systems for tracking an edge ring includes capturing an edge ring identifier from a source related to the edge ring. The edge ring is inserted into a slot of an edge ring carrier, wherein the edge ring is being assigned to the edge ring carrier. The edge ring identifier is tracked to determine transfers into and out of the edge ring carrier and into and out of a processing station. The tracking of the edge ring identifier builds a metadata file that provides lifetime information regarding the edge ring.

Abstract: Systems and methods for processing a semiconductor wafer includes a plasma processing chamber. The plasma processing chamber includes an exterior, an interior region with a wafer receiving mechanism and a viewport disposed on a sidewall of the plasma processing chamber providing visual access from the exterior to the wafer received on the wafer receiving mechanism. A camera is mounted to the viewport of the plasma processing chamber on the exterior and coupled to an image processor. The image processor includes pattern recognition logic to match images of emerging pattern captured and transmitted by the camera, to a reference pattern and to generate signal defining an endpoint when a match is detected. A system process controller coupled to the image processor and the plasma processing chamber receives the signal from the image processor and adjusts controls of one or more resources to stop the etching operation.

Abstract: Systems and methods for processing a semiconductor wafer includes a plasma processing chamber. The plasma processing chamber includes an exterior, an interior region with a wafer receiving mechanism and a viewport disposed on a sidewall of the plasma processing chamber providing visual access from the exterior to the wafer received on the wafer receiving mechanism. A camera is mounted to the viewport of the plasma processing chamber on the exterior and coupled to an image processor. The image processor includes pattern recognition logic to match images of emerging pattern captured and transmitted by the camera, to a reference pattern and to generate signal defining an endpoint when a match is detected. A system process controller coupled to the image processor and the plasma processing chamber receives the signal from the image processor and adjusts controls of one or more resources to stop the etching operation.

Abstract: Systems and methods for processing a semiconductor wafer includes a plasma processing chamber. The plasma processing chamber includes an exterior, an interior region with a wafer receiving mechanism and a viewport disposed on a sidewall of the plasma processing chamber providing visual access from the exterior to the wafer received on the wafer receiving mechanism. A camera is mounted to the viewport of the plasma processing chamber on the exterior and coupled to an image processor. The image processor includes pattern recognition logic to match images of emerging pattern captured and transmitted by the camera, to a reference pattern and to generate signal defining an endpoint when a match is detected. A system process controller coupled to the image processor and the plasma processing chamber receives the signal from the image processor and adjusts controls of one or more resources to stop the etching operation.

Abstract: Systems and methods for processing a semiconductor wafer includes a plasma processing chamber. The plasma processing chamber includes an exterior, an interior region with a wafer receiving mechanism and a viewport disposed on a sidewall of the plasma processing chamber providing visual access from the exterior to the wafer received on the wafer receiving mechanism. A camera is mounted to the viewport of the plasma processing chamber on the exterior and coupled to an image processor. The image processor includes pattern recognition logic to match images of emerging pattern captured and transmitted by the camera, to a reference pattern and to generate signal defining an endpoint when a match is detected. A system process controller coupled to the image processor and the plasma processing chamber receives the signal from the image processor and adjusts controls of one or more resources to stop the etching operation.

Abstract: A method for etching a layer is provided. A substrate is provided in a chamber. An etch plasma for etching a layer on the substrate is generated. Light from a first region of the chamber is measured to provide a first signal. Light from a second region of the chamber is measured to provide a second signal. The first signal with the second signal are compared to determine an etch endpoint.

Abstract: A method for etching a layer is provided. A substrate is provided in a chamber. An etch plasma for etching a layer on the substrate is generated. Light from a first region of the chamber is measured to provide a first signal. Light from a second region of the chamber is measured to provide a second signal. The first signal with the second signal are compared to determine an etch endpoint.

Abstract: A microwave plasma reactor including a chamber for containing a gas to be energized into a plasma with microwave energy, an electrode having two surfaces in the chamber for radiating microwave energy from one of the surfaces into the chamber to form the plasma proximate the radiating surface, and a waveguide or coaxial conductor for introducing microwave energy onto the other of the two electrode surfaces for providing the energy to form the plasma.

Abstract: A process for depositing diamond on a substrate using a microwave plasma generator including introducing a feed which includes diamond forming constituents in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma which emits a spectrum monitored to maintain a relative emission intensity ratio of two of the constituents in a predetermined range, for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.

Abstract: A microwave plasma reactor including a chamber for containing a gas to be energized into a plasma with microwave energy, an electrode having two surfaces in the chamber for radiating microwave energy from one of the surfaces into the chamber to form the plasma proximate the radiating surface, and a waveguide or coaxial conductor for introducing microwave energy onto the other of the two electrode surfaces for providing the energy to form the plasma.

Abstract: A process for depositing diamond on a substrate using a microwave plasma generator including providing carbon, hydrogen and oxygen in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma with the C.sub.2 emission at 5165 Angstroms (.ANG.) at a level of from 0.5 to 50 times the atomic hydrogen alpha emission level at 6563 .ANG., for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.