Abstract: An electrically erasable/programmable CMOS logic memory cell for RFID applications and other mobile applications includes a tunneling capacitor, a control capacitor, and a CMOS inverter that share a single floating gate. A two-phase program/erase operation performs an initial Fowler-Nordheim (F-N) injection phase using the capacitors, and then a Band-to-Band Tunneling (BBT) phase using the CMOS inverter. Both the F-N injection and BBT phases are performed using low currents and low voltages (i.e., 5V or less). The tunneling and control capacitors are fabricated in isolated P-wells (IPWs) including both N+ and a P+ regions to enable the use of both positive and negative programming voltages during the F-N and BBT programming/erasing operations.