Patents by Inventor Evgeni Gurevich
Evgeni Gurevich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11862522Abstract: Methods, metrology modules and target designs are provided, which improve the accuracy of metrology measurements. Methods provide flexible handling of multiple measurement recipes and setups and enable relating them to landscape features that indicate their relation to resonance regions and to flat regions. Clustering of recipes, self-consistency tests, common processing of aggregated measurements, noise reduction, cluster analysis, detailed analysis of the landscape and targets with skewed cells are employed separately or in combination to provide cumulative improvements of measurement accuracy.Type: GrantFiled: February 18, 2021Date of Patent: January 2, 2024Inventors: Barak Bringoltz, Evgeni Gurevich, Ido Adam, Yoel Feler, Dror Alumot, Yuval Lamhot, Noga Sella, Yaron De Leeuw, Tal Yaziv, Eltsafon Ashwal-Island, Lilach Saltoun, Tom Leviant
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Publication number: 20230099105Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: ApplicationFiled: December 6, 2022Publication date: March 30, 2023Inventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
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Patent number: 11537043Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: GrantFiled: January 28, 2021Date of Patent: December 27, 2022Assignee: KLA-TENCOR CORPORATIONInventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
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Publication number: 20220171297Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.Type: ApplicationFiled: February 18, 2022Publication date: June 2, 2022Inventors: Yoel Feler, Mark Ghinovker, Diana Shaphirov, Evgeni Gurevich, Vladimir Levinski
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Patent number: 11256177Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.Type: GrantFiled: January 15, 2020Date of Patent: February 22, 2022Assignee: KLA CorporationInventors: Yoel Feler, Mark Ghinovker, Diana Shaphirov, Evgeni Gurevich, Vladimir Levinski
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Patent number: 11164307Abstract: A metrology system and metrology methods are disclosed. The metrology system includes an illumination sub-system, a collection sub-system, a detector, and a controller. The controller is configured to receive an image of an overlay target on a sample, determine an apparent overlay between two working zones along a measurement direction based on the image, and calculate an overlay between the two sample layers by dividing the apparent overlay by a Moiré gain to compensate for Moiré interference.Type: GrantFiled: July 21, 2020Date of Patent: November 2, 2021Assignee: KLA CorporationInventors: Yoel Feler, Mark Ghinovker, Evgeni Gurevich, Vladimir Levinski, Alexander Svizher
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Publication number: 20210175132Abstract: Methods, metrology modules and target designs are provided, which improve the accuracy of metrology measurements. Methods provide flexible handling of multiple measurement recipes and setups and enable relating them to landscape features that indicate their relation to resonance regions and to flat regions. Clustering of recipes, self-consistency tests, common processing of aggregated measurements, noise reduction, cluster analysis, detailed analysis of the landscape and targets with skewed cells are employed separately or in combination to provide cumulative improvements of measurement accuracy.Type: ApplicationFiled: February 18, 2021Publication date: June 10, 2021Inventors: Barak Bringoltz, Evgeni Gurevich, Ido Adam, Yoel Feler, Dror Alumot, Yuval Lamhot, Noga Sella, Yaron De Leeuw, Tal Yaziv, Eltsafon Ashwal-Island, Lilach Saltoun, Tom Leviant
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Publication number: 20210149296Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: ApplicationFiled: January 28, 2021Publication date: May 20, 2021Inventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
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Publication number: 20210072650Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.Type: ApplicationFiled: January 15, 2020Publication date: March 11, 2021Inventors: Yoel Feler, Mark Ghinovker, Diana Shaphirov, Evgeni Gurevich, Vladimir Levinski
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Patent number: 10901325Abstract: Methods are provided for designing metrology targets and estimating the uncertainty error of metrology metric values with respect to stochastic noise such as line properties (e.g., line edge roughness, LER). Minimal required dimensions of target elements may be derived from analysis of the line properties and uncertainty error of metrology measurements, by either CDSEM (critical dimension scanning electron microscopy) or optical systems, with corresponding targets. The importance of this analysis is emphasized in view of the finding that stochastic noise may have increased importance with when using more localized models such as CPE (correctables per exposure). The uncertainty error estimation may be used for target design, enhancement of overlay estimation and evaluation of measurement reliability in multiple contexts.Type: GrantFiled: February 27, 2018Date of Patent: January 26, 2021Assignee: KLA-Tencor CorporationInventors: Evgeni Gurevich, Michael E. Adel, Roel Gronheid, Yoel Feler, Vladimir Levinski, Dana Klein, Sharon Aharon
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Patent number: 10831108Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.Type: GrantFiled: June 30, 2016Date of Patent: November 10, 2020Assignee: KLA CorporationInventors: Tal Marciano, Barak Bringoltz, Evgeni Gurevich, Ido Adam, Ze'ev Lindenfeld, Zeng Zhao, Yoel Feler, Daniel Kandel, Nadav Carmel, Amnon Manassen, Nuriel Amir, Oded Kaminsky, Tal Yaziv, Ofer Zaharan, Moshe Cooper, Roee Sulimarski, Tom Leviant, Noga Sella, Boris Efraty, Lilach Saltoun, Amir Handelman, Eltsafon Ashwal, Ohad Bachar
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Publication number: 20190250504Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: ApplicationFiled: April 16, 2018Publication date: August 15, 2019Inventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
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Publication number: 20190049858Abstract: Methods are provided for designing metrology targets and estimating the uncertainty error of metrology metric values with respect to stochastic noise such as line properties (e.g., line edge roughness, LER). Minimal required dimensions of target elements may be derived from analysis of the line properties and uncertainty error of metrology measurements, by either CDSEM (critical dimension scanning electron microscopy) or optical systems, with corresponding targets. The importance of this analysis is emphasized in view of the finding that stochastic noise may have increased importance with when using more localized models such as CPE (correctables per exposure). The uncertainty error estimation may be used for target design, enhancement of overlay estimation and evaluation of measurement reliability in multiple contexts.Type: ApplicationFiled: February 27, 2018Publication date: February 14, 2019Inventors: Evgeni GUREVICH, Michael E. ADEL, Roel GRONHEID, Yoel FELER, Vladimir LEVINSKI, Dana KLEIN, Sharon AHARON
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Publication number: 20180047646Abstract: Methods, metrology modules and target designs are provided, which improve the accuracy of metrology measurements. Methods provide flexible handling of multiple measurement recipes and setups and enable relating them to landscape features that indicate their relation to resonance regions and to flat regions. Clustering of recipes, self-consistency tests, common processing of aggregated measurements, noise reduction, cluster analysis, detailed analysis of the landscape and targets with skewed cells are employed separately or in combination to provide cumulative improvements of measurement accuracy.Type: ApplicationFiled: February 23, 2017Publication date: February 15, 2018Inventors: Barak Bringoltz, Evgeni Gurevich, Ido Adam, Yoel Feler, Dror Alumot, Yuval Lamhot, Noga Sella, Yaron Deleeuw, Tal Yaziv, Eltsafon Ashwal, Lilach Saltoun, Tom Leviant
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Publication number: 20160313658Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.Type: ApplicationFiled: June 30, 2016Publication date: October 27, 2016Inventors: Tal Marciano, Barak Bringoltz, Evgeni Gurevich, Ido Adam, Ze'ev Lindenfeld, Zeng Zhao, Yoel Feler, Daniel Kandel, Nadav Carmel, Amnon Manassen, Nuriel Amir, Oded Kaminsky, Tal Yaziv, Ofer Zaharan, Moshe Cooper, Roee Sulimarski, Tom Leviant, Noga Sella, Boris Efraty, Lilach Saltoun, Amir Handelman, Eltsafon Ashwal, Ohad Bachar